歐姆電極 的英文怎麼說

中文拼音 [ōumǔdiànjí]
歐姆電極 英文
ohmic electrode
  • 歐 : 名詞1. （姓氏） a surname 2. （歐洲的簡稱） short for europe
  • 姆 : 姆名詞1 （古代教育未出嫁女子的婦人） governess of girl2 [書面語] （乳母） wet nurse3 [書面語] （...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 歐姆 : [物理學] ohm歐姆表 ohm gauge; ohmmeter; 歐姆定律 ohm's law; 歐姆計 ohmer; ohmmeter
  • 電極 : electrode; pole
  1. Taking the silicon diode as an example, through an analysis of the diode ' s current - voltage characters and the avometer circuit, the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades

    摘要以硅二極體為例，從二極體的伏安特性及萬用表內部電路的角度，分析了用指針式萬用表的不同歐姆檔位測量二極體的正向直流等效電阻時，其值緣何不同。
  2. We shall take the typical emitter-to-base resistance as about 250 ohms.

    我們取發射極基極電阻的典型值為250歐姆左右。
  3. The board members presently also include the following well - respected and prestigious directors : steven spielberg, clint eastwood, woody allen, francis ford coppola, stanley kubrick, george lucas, robert redford, and sydney pollack. over 150 hollywood stars, including past oscar winners and nominees, attended to pay tribute to all those who had received awards and were honored at the academy awards ceremony and support the film foundation. those given the celebrity red carpet treatment included : renowned hollywood actor and oscar nominee gary busey point break, under siege, singer michael bolton go the distance, when a man loves a woman, popular television actor scott baio happy days, charles in charge, well - known actress, jane seymour dr. quinn, medicine woman, james bond : live and let die, legendary actor, oscar winner and multi - nominee martin landau ed wood, cleopatra, the x - files - fight the future, actress and wife of radio personality casey kasem, jean kasem, acclaimed actor, oscar winner and multi - nominee maximillian schell deep impact, the chosen, model and actress anna nicole smith and many more

    參與此場禮贊奧斯卡和贊助電影基金會盛宴的好萊塢明星有150位以上，包括歷年奧斯卡獎得主和獲提名者，其中受到紅地氈禮遇的名人有：著名的好萊塢演員並獲奧斯卡提名的賈利布塞終極豪情魔鬼戰將歌星麥可伯特恩去向遠方當男人愛上女人電視偶像明星史考特貝歐幸福的日子理查斯當執知名女星珍西摩兒杏林英雌詹姆斯德系列生死關頭獲得多次提名並為奧斯卡得主的傳奇性演員馬丁藍道艾得伍德埃及艷后x檔案征服未來無線電臺名人凱塞卡森的妻子女演員琴卡森演技受人推崇獲得多次提名並為奧斯卡得主的演員麥西彌連雪爾慧星撞地球被選中的人名模特兒兼女星安娜妮可史密斯等等。
  4. The main work includes three contents as followings : 1, the situation of ohmic contact about al electrode, ti / al electrode on n - gan in different annealing conditions are investigated

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型gan在不同退火條件下的歐姆接觸情況，並用挖補圓盤法計算出接觸電阻率。
  5. Electrochemical measurements show that specific capacitance of single electrode is increased by 15 % and its impedance is only tens of m

    雙氫氧化物經水熱處理后單電極比容量提高了15 ，達460f4 ，電極內阻僅數十毫歐姆。
  6. The intention of the paper is to study the deposition and properties of znte ( znte : cu ) polycrystalline thin films and to apply znte ( znte : cu ) as a complex back contact layer between cdte and metal electrode to obtain ohm contact and high efficiency cdte solar cells

    本論文目的在於研究znte （ znte ： cu ）多晶薄膜的制備和性質，並把znte znte ： cu多晶薄膜作為復合背接觸層應用於cdte和背金屬電極之間以獲得歐姆接觸和高效cdte太陽電池。
  7. Must arrange earthing poles in a side of the base or it around. the earhting resisance should be less than 4ohm to assure that the connent rain water from entering cable room

    必須在組變基礎一側或四周布好接地極，接地電阻值應小於4歐姆，並應確保組合式變電站與接地極作可靠連接
  8. Remember the following words and expressions : e. g. multimeter ； circuit ， current ； voltage ； resistance ； digital multimeter ； analogue multimeter ； analogue multimeter scales ； zero adjustment control ； zero adjustment control for resistance ranges ； measurement ranges switch ； transistor test socket ； meter probe ； positive terminal ； negative terminal ； anode ； cathode ； red lead ； black lead ； power supply ； connect in parallel ； connect in series

    記住萬用表、電路、電流、電壓、電阻、數字萬用表、模擬萬用表、表頭、機械零位調整器、歐姆零位調整器、量程選擇開關、晶體管插孔、表棒、正接線端、負接線端、陽極、陰極、紅導線、黑導線、電源、並聯、串聯等常用英文單詞，並逐步掌握。
  9. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  10. All diodes have large reverse leak current density, which maybe caused by some reasons such as many ions are brought in course of evaporating metal on silicon surface of 6h - sic, chemical etch brings disfigurements such as burrs and dentate erodes as well as the rinse on surface of samples is not drastically accomplished

    兩個肖特基二極體反向漏電流較大，估計原因為正面蒸發金屬時引入大量離子、光刻引入毛刺和鉆蝕等缺陷、金屬與樣品粘附能力差及樣品背面歐姆接觸制備好后正面清洗不充分等。
  11. During this process, the level of doping concentration exceeds the density of cd vacancy in the crystal. in addition, the preparation of au contact on cd1 - xznxte wafers was studied. after further thermo - treatment, the stable ohm au contact was achieved

    此外，對于在cd _ （ 1 - x ） zn _ xte晶體上制備穩定歐姆接觸電極進行了相應的研究，制定出相應的蒸鍍及退火工藝。
  12. For the purposes to make cd1 - xznxte detector, ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed. the processing of conducting film prepared by the magnetron sputtering is studied

    本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。
  13. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  14. By testing the battery resistance, we chose the dimension of the square ni / mh battery of the 5. 7ah capacity as follow : the size of positive was 120mm 72mm, and the size of negative was 121mm 72mm, which presented the low resistance

    通過對電池歐姆內阻的測量，確定了5 . 7ah容量的方形ni / mh電池的最優的極片尺寸，即正極尺寸120mm 72mm ，負極尺寸121mm 72mm 。採用此種極片尺寸的方形ni / mh電池可以有較小的內阻。
  15. But the comprehensive properties were improved remarkably. with the addition of carbon nanotubes, the polarization of charging process decreased, the plateau of discharge became flatter and the migration of potential of peaks value of cyclic voltemmograms reduced. for the other hand, the exchange current increased, ohm resistance and electrochemical reaction resistance of the electrodes decreased, the diffusion resistance of hydrogen and the resistance of adsorption decreased, too

    摻入碳納米管對儲氫合金電極的容量影響較小，但其電化學性能卻有較大的改善，主要體現在：充電的極化減小，放電平臺更加平穩、循環伏安曲線的峰值電位隨掃描速度增大的遷移量減小，交換電流密度增大，電極的歐姆電阻、電化學反應、擴散電阻和吸附電阻均減小。
  16. 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively

    2 、利用ti al雙層電極作歐姆接觸， au電極作肖特基接觸，製造出algan基肖特基二極體原型器件。
  17. A silicon self - aligned technology was achieved by using a smart power integrated technology to get high power of the circuit. vertical pnp transistor whose base is epitaxy layer was used as output. the collector of the vertical pnp transistor was set on the back of the chip with low resistance p + substrate as ohm contact

    在工藝中，採用了smart功率集成技術實現電路的大功率，基區是外延層的縱向pnp晶體管作為輸出，將集電極置於晶元背面，採用低電阻率p ~ +襯底作為歐姆接觸。
  18. The main work includes four contents as follow : 1 ) the electrodes annealed in various temperatures were studied. with x - ray diffraction spectroscopy ( xrd ) and sims, the interfacial reaction is analyzed and a new two - step annealing method is suggested

    研究了al單層電極及ti al雙層電極與藍寶石基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。
  19. The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions. by using xrd sims analytic methods and i - v measuremnet, we analysed the interface between metals and gan, and suggested that it is effect to decrease the value of the ohmic contact

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型si基gan和al _ 2o _ 3基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。
  20. April 11, 2007 ? odva today announced that schneider electric will significantly increase its level of support for the organization by becoming one of its principal members, alongside cisco systems, eaton electrical, omron corporation, and rockwell automation

    4月11日消息? ? odva （開放設備網供應商協會）今天宣布施耐德電氣將極大提高對該組織的支持度，與思科系統、伊頓電氣、歐姆龍以及羅克韋爾自動化等公司一道，成為該組織的主要成員之一。
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