氣敏元件 的英文怎麼說
中文拼音 [qìmǐnyuánjiàn]
氣敏元件
英文
gas sensor-
The temperature change during reaction of n - type metal oxide gas sensor
型金屬氧化物氣敏元件的反應溫變Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance
室溫下禁帶寬度為3 . 37ev ,激子束縛能為60mev ,具備了室溫下發射紫外光的必要條件,在紫外探測器、 led 、 ld等領域有著巨大的發展潛力; zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。Two kinds of wo3 powder are prepared by sol - gel method and gas - phase reaction method with tungsten filament, and heater type gas sensors to trimethylamine are made. under different work temperatures, these sensors ’ sensitivities are measured, and the result indicates that wo3 by sol - gel has better gas sensing performance to trimethylamine. at the same time, the wo3 - based gas sensor to trimethylamine can work at low temperature, which
3 、本課題對不同摻雜的wo3材料進行了研究,發現摻雜3 % pd的wo3基氣敏元件在150ppm三甲胺氣體中,最佳工作溫度僅為85 ,該溫度下元件最高靈敏度可達11 . 7 ,並且元件的靈敏度隨tma濃度的升高而變大,這表明摻雜pd的wo3材料在低溫下對tma氣體有很好的響應。In a general way, the sensitive performance of gas sensor is closely relative to the working temperature. it is very easy for mems to integrate the gas sensitive element, the heater and temperature sensor together
氣體傳感器的敏感性能一般與工作溫度密切相關, mems技術很容易將氣敏元件和加熱元件、溫度探測元件製作在一起,保證了氣體傳感器的優良性能。Test mehods for gas sensors of metal - oxide semiconductor
金屬氧化物半導體氣敏元件.試驗方法The conductivity - temperature property of gas sensor made by nano - sized sno2 powder has typical surface controlled sensor ' s characteristic, the conductivity peak is about 130
用sno _ 2納米粉體製成旁熱式氣敏元件,所制元件的電導-溫度特性呈現明顯的表面控制型特徵,其電導峰出現在130左右。Measuring methods for gas sensors of metal - oxide semiconductor
金屬氧化物半導體氣敏元件測試方法Generic specification for gas sensors of metal - oxide semiconductor
金屬氧化物半導體氣敏元件總規范Compound oxide series gas sensor
復合氧化物系氣敏元件Zinc oxide series gas sensor, zno
系氣敏元件N - type oxide gas sensor, n
型氧化物氣敏元件Tin oxide series gas sensor sno
系氣敏元件P - type oxide gas sensor, p
型氧化物氣敏元件P - type oxide gas sensor p
型氧化物氣敏元件Silicon crystal gas sensor
碳單晶氣敏元件Xps measurement results exhibited that no detectable fe2 + existed in the compound of a ~ fe2os doped with sn4 +, which suggest that oxygen anions or cation vacancies not only can compensate the charge balance but also significantly enhance the gas - sensitivity of a - fe2o3 based gas sensors. ( 3 ) conductive type of a - fe2o3 doped with sn4 + is showed in the n - type by hall measurement and gas - sensitivity measurement. the results of measurements and characterizations suggest that the sensitive mechanism of the a - fe2o3 based nano - materials prepared by this work be the surface resistance controlled mode
( 3 )首次進行了霍爾測量,並結合氣敏測試結果,從不同方面證實了摻錫- fe _ 2o _ 3納米半導體的導電類型是n型;綜合粉體的電導率?溫度曲線、元件的電阻?加熱電流特徵曲線、元件在不同氣氛下的電阻特性以及比表面積等測試表徵結果,得出本文所製成的- fe _ 2o _ 3基氣敏元件的氣敏機理特徵屬于表面控制型。N - type oxide gas sensor
型氧化物氣敏元件Theoretical calculation of gaseous concetration by the dynamic pulse measurent of gas - sensing element
氣敏元件動態脈沖測試時氣體濃度的理論計算Through the technology of rf and dc reactive sputtering manufacture, h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached
通過交流和直流反應濺射,我們以硅基片(表面上有白金加熱電極)為基底製作h _ 2s氣敏元件。Gas - sensitive element
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