氣體流量 的英文怎麼說

中文拼音 [qìtǐliúliáng]
氣體流量 英文
gas flow meter
  • 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
  • 體 : 體構詞成分。
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 氣體 : gas; gaseous fluid
  • 流量 : rate of flow; flow; runoff; discharge; throughput; （flow） rate; quantity （of flow）; flux
  1. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  2. A design of automatic calibration system for bell prover gas calibration facility

    鐘罩式氣體流量標準裝置自動檢定系統的設計與實現
  3. Measurement of gas flow by means of critical flow venturi nozzles

    用臨界流量文丘里噴嘴測定氣體流量
  4. Gas flow by means of critical flow venturi nozzles, measurement of

    利用臨界文氏流量噴嘴測量氣體流量
  5. The influences of structure variables such as impeller types, baffle configurations, gas sparger, and operational variables such as gas rate, particle fraction on critical suspension speed of floating particle in an agitated vessel were investigated

    摘要探討了攪拌槳型、擋板和氣體分佈器等結構因素及氣體流量、顆粒質量分數等工藝因素對下沉顆粒三相體系臨界攪拌轉速的影響。
  6. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。
  7. Proving methods and procedures for gas flowmeters

    氣體流量計的驗證方法和程序
  8. To get mass flow rate of vent gas and coarse aeetaldehyde from their volume flow rate data, density compensations are performed with regressed relationship between density and ( temperature, pressure and concentration )

    針對包含化學反應過程的生產流程，提出了基於原子衡算的數據調和演算法，並將之應用於乙醛生產過程的數據調和。調和計算中考慮了粗乙醛流量和小放空氣體流量的密度補償。
  9. Methods for measurement of fluid flow in closed conduits, using tracers - measurement of gas flow - general

    密封管道中流體流量的示蹤劑測量法.第2部分:氣體流量測量.第1節:總則
  10. Measurement of gas flow in conduits. tracer methods. part 1 general

    密封管道中氣體流量的測定.示蹤法.第1部分：概述
  11. Measurement of gas flow in conduits. tracer methods. part 4 : transit time method using radioactive tracers

    密封管道中氣體流量的測定.示蹤法.第4部分：放射性示蹤物的過渡時間法
  12. Methods for measurement of fluid flow in closed conduits, using tracers - measurement of gas flow - transit time method using radioactive tracers

    使用示蹤劑的密封管道中流體流量的測量方法.氣體流量的測量.採用放射性示蹤劑的過渡時間法
  13. Verification scheme of gas flow measuring instruments

    氣體流量計量器具檢定系統
  14. Effect of humidity on calibration of bell gas flow standard installation

    濕度對鐘罩式氣體流量標準裝置標定的影響
  15. When nals was used as the collector in the process, the optimal conditions were the ph of feed solution 5. 0 - 6. 0, air flow rate 100ml / min, the liquid column depths 20cm, the surfactant concentration determined by its cmc and feed concentration. under this condition, the 3 can be above 20. also, the optimal ph ( 5. 0 ) was calculated theoretically for the recovery of the cu ( ii )

    對以十二烷基硫酸鈉為捕集劑的泡沫吸附分離過程的工藝參數進行了研究，並得出本分離系統所確定的最佳工藝參數為： ph5 . 0 6 . 0 ，氣體流量100ml min ，液位高度20cm ，最佳表面活性劑濃度由其臨界膠束濃度和原料液濃度確定，此時（濃縮比）可達20以上；同時還從理論上推算出泡沫吸附分離銅的最佳ph值范圍為5 . 0左右。
  16. Measurement of gas flow by means of critical flow venturi nozzles iso 9300 : 2005 ; german version en iso 9300 : 2005

    用文杜利臨界流量噴嘴測量氣體流量
  17. Nozzle in the furnace the gas - quenching pressure can be 15 bar, airflow is big and uniform, cooling rate is very high

    配置內置高效熱交換器，以及經優化設計的氣淬系統，冷卻氣體流量均勻且流速大，冷卻速度高
  18. Measurement of gas flow by turbine meters

    用汽輪計測量氣體流量
  19. Measurement of gas flow in closed conduits - turbine meters

    封閉管道中氣體流量的測量渦輪流量計
  20. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
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