氣體流 的英文怎麼說

中文拼音 [liú]
氣體流 英文
gas stream
  • : Ⅰ名詞1 (氣體) gas 2 (空氣) air 3 (氣息) breath 4 (自然界冷熱陰晴等現象) weather 5 (氣味...
  • : 體構詞成分。
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • 氣體 : gas; gaseous fluid
  1. 3. the mathematical model for heat and mass transfer in the adsorbent bed is established, the porous of adsorbent, the flow of adsorbate in adsorbent, the characteristic of non - equilibrium adsorption are combined in the model, and a more accurate model of fluid flow in porous media - ergun model is adopted

    它綜合考慮了吸附劑的多孔介質結構,吸附質在吸附劑內的動,吸附的非平衡特性等,並且在吸附質氣體流動模型的選擇上,採用了ergun多孔介質動模型,比常規的數學模型更全面準確地描述了吸附床傳熱傳質的動態特性。
  2. In aerated flow,solids are fluidized or suspended by the gas.

    在充動中,固顆粒被氣體流化或懸浮起來。
  3. The risorius and the buccinator muscles assist in the retraction of the lips, as well as support entrapment of air within the oral cavity

    笑肌和頰肌幫助唇的收縮,也支撐了整個口腔的氣體流通。
  4. Simulations of compressible perfect gas flow by lattice boltzmann models

    模型模擬可壓縮完全氣體流
  5. The reaction activity was influenced by the velocity of gas, and the conversion rate was inverse ratio to the velocity of flow

    同時研究了反應氣體流速對h _ 2s光催化氧化反應的影響, h _ 2s的去除率與速成反比。
  6. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上,採用直磁控濺射法在cdznte晶上制備出cu ag合金薄膜,揭示了氣體流量、直濺射功率、勵磁電源功率、工作壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大,隨濺射功率的增大沉積速率快速增大。
  7. A design of automatic calibration system for bell prover gas calibration facility

    鐘罩式氣體流量標準裝置自動檢定系統的設計與實現
  8. The rarefaction and compressibility effects of the gas flow in circular microtube

    微細圓管中氣體流動的稀薄效應和可壓縮效應
  9. Influence of ktb place on gas flow field in rh vacuum chamber

    真空室氣體流動的影響
  10. Measurement of gas flow by means of critical flow venturi nozzles

    用臨界量文丘里噴嘴測定氣體流
  11. Gas flow by means of critical flow venturi nozzles, measurement of

    利用臨界文氏量噴嘴測量氣體流
  12. The influences of structure variables such as impeller types, baffle configurations, gas sparger, and operational variables such as gas rate, particle fraction on critical suspension speed of floating particle in an agitated vessel were investigated

    摘要探討了攪拌槳型、擋板和分佈器等結構因素及氣體流量、顆粒質量分數等工藝因素對下沉顆粒三相系臨界攪拌轉速的影響。
  13. Plastics piping systems - fittings, valves and ancillaries - determination of gaseous flow rate pressure drop relationships

    塑料管道系統.管件閥門和附件.氣體流速與壓降之間關系的測定
  14. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝,側重研究了碳化時間、反應室壓、 c源量、碳化溫度以及不同種類的c源、基片取向等因素對碳化層質量的影響,研究結果表明:隨著碳化時間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之降低,但當碳化到一定時間之後,碳化反應減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室壓的升高而變大,適中的反應室壓可得到表面比較平整的碳化層;在c源量相對較小時,碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當氣體流量增大到一定程度時,碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時,適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時,碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現,但取向較差,同時,適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源時得到的碳化層表面平整得多;比起si ( 100 ) ,選用si ( 111 )作為基片生長的碳化層的晶粒取向一致性明顯更好。
  15. Proving methods and procedures for gas flowmeters

    氣體流量計的驗證方法和程序
  16. To get mass flow rate of vent gas and coarse aeetaldehyde from their volume flow rate data, density compensations are performed with regressed relationship between density and ( temperature, pressure and concentration )

    針對包含化學反應過程的生產程,提出了基於原子衡算的數據調和演算法,並將之應用於乙醛生產過程的數據調和。調和計算中考慮了粗乙醛量和小放空氣體流量的密度補償。
  17. The difficult-to-describe flow of gas, with its large deviations from plug flow and the bypassing of solids by bubbles, represents an inefficient contacting system.

    氣體流動狀態難以描述,與活塞離較大,由於泡產生而使固顆粒發生溝,這些都表示接觸效率降低。
  18. Methods for measurement of fluid flow in closed conduits, using tracers - measurement of gas flow - general

    密封管道中量的示蹤劑測量法.第2部分:氣體流量測量.第1節:總則
  19. Measurement of gas flow in conduits. tracer methods. part 1 general

    密封管道中氣體流量的測定.示蹤法.第1部分:概述
  20. Measurement of gas flow in conduits. tracer methods. part 4 : transit time method using radioactive tracers

    密封管道中氣體流量的測定.示蹤法.第4部分:放射性示蹤物的過渡時間法
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