氧分壓電極 的英文怎麼說

中文拼音 [yǎngfēnyādiànjí]
氧分壓電極 英文
po2 electrode
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 分 : 分Ⅰ名詞1. （成分） component 2. （職責和權利的限度） what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] （料想） judge
  • 壓 : 壓構詞成分。
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電極 : electrode; pole
  1. A new measurement system for electrical conductivity in an yj - 3000t press fitted with a wedge - type cubic anvil was set up on the basis of the old one. a solartron 1260 impedance / gain phase analyzer was used in the new system ; mo electrodes and a mo shield were also used to keep oxygen fugacity close to the mo - moo2, which is similar to that of iron - wustite ( iw )

    在yj ?緊裝式六面頂壓機上，對原有的礦物、巖石電性測量系統進行了進一步的改進：建立了一套以solartron1260阻抗增益?相位分析儀為測試儀器，使用mo電極和mo盾來控制樣品氧逸度的測量系統，該系統的氧逸度環境為mo ? moo _ 2 ，接近iw緩沖對。
  2. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  3. The former electrode is manufactured in two steps. first, amorphous hydrated ruo _ 2 power is made from stuff rucl _ 3 ? nh _ 2o in colloidal way. then the power is mixed with adhesive and conductive agent, coated on ta foil by heat - press

    粘合劑法制備電極片分為兩步，首先以水合三氯化釕為原料用膠體法制備出無定型水合氧化粉體，然後將粉體加粘合劑和導電劑壓制到基體鉭箔上。
  4. As the partial pressure of o2 increases the cathode voltage of the target increases in order to maintain the same current intensity and the sedimentation rate gradually decreases

    氧氣分壓的增大，維持同樣濺射電流強度的靶陰極電壓增大，薄膜的沉積速率逐漸減小。
  5. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  6. In chapter three, the mechanism responsible for scanning probe field - induced oxidation in ambient air is attributed to an electrochemical process, i. e., anodic oxidation or anodization, after the analyses is given of a surface of a sample exposed to air. the effects of biases, tip speeds on morphology of field - induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth

    第三章首先通過分析大氣環境下掃描探針場致氧化加工的基本特性，得出掃描探針場致氧化的加工機理為電化學陽極氧化反應；引進大氣狀態下場致氧化的動力學方程，推導出偏置電壓與場致氧化物的幾何形態兩者之間的關系、掃描探針移動速度與場致氧化物的幾何形態兩者之間的關系。
  7. Aao films were anodic oxidized using oxalic acid under different voltage from 30v to 60v. under 40v, the diameter range of aao is 80nm ~ 100nm and narrowly distributed. the thickness of aao film is about 2. 0 # m and the aspect ratio is beyond 15

    在不同電壓下（ 30v 60v ） ，採用草酸溶液體系用陽極氧化法制備了多孔氧化鋁模板，氧化鋁模板的孔徑在80nm 100nm之間，分佈均勻，模板厚度在1 . 5 2 . 0 m之間，長徑比在15以上。
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