氧氮化硅 的英文怎麼說
中文拼音 [yǎngdànhuàguī]
氧氮化硅
英文
silicon oxynitride-
Chemical analysis for silicon carbide refractories - determination of ferric oxide - o - phenanthroline photometric method
碳化硅耐火材料化學分析方法鄰二氮雜菲光度法測定三氧化二鐵量The investigated anode materials include modified carbons, nitrides, silicides, oxides and novel alloys
研究的負極材料主要有：改性碳材料、氮化物、硅化物、氧化物和新型合金。Silicon oxynitride, sion
氮氧化硅The silica coated nanometer particles after containning in n2 for 2h within 600 c is the crystallization form. thus it can sufficiently work the nano effect. the surface of the composite particles has no crystal water and no absorbing water. the anti - oxidation ability increase after coating
鐵納米復合粒子為結晶態，納米粒子在6000c ，氮氣保護下，納米粒子不重新結晶，殼層二氧化硅包裹在納米鐵表面阻斷了納米粒子之間的重新原子排列。Influence of chemical surface treatment on charge storage stability for miniature si3n4 sio2 electret film
化學表面處理對微型化的氮氧化硅駐極體層電荷儲存性能的影響The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth
用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application
熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性Various surface passivations of ps, such as by hydrogen, oxygen, nitrogen and noble metals, have been compared. the pss were formed by photoelectrochemical means
常見的表面修飾方法包括對多孔硅表面進行氫鈍化、氧鈍化、氮鈍化、金屬鈍化等，這些修飾方法各有其特點。The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball
結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )
通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry
從理論上詳細地分析了二氧化硅氮化與矽片氮化的關系和氧分在氮化過程中對氮化的影響。It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance
採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。Compared with carbon, silicon nitride bonded silicon carbide has better oxidation resistance and bigger resistance ratio, which make it be a perfect line material of al electrolysis cell
在鋁電解方面，氮化硅結合碳化硅遠較陰極碳塊耐腐蝕、抗氧化、電阻率高，是理想的電解槽側壁內襯材料。Surface ramam spectrpscopy for in situ investigating silicon etching process
前驅體法制備氮氧化硅納米線及其光學性能研究The results show that the thermal diffusivity of thin film is smaller than its corresponding bulk material, and with the decreasing of the thickness, the thermal diffusivity also decreasing
）的二氧化硅薄膜、氮化硅薄膜、多晶硅薄膜的熱擴散率，實驗結果表明，薄膜的熱擴散率比其體材料的要小，並且隨著薄膜厚度的減小，熱擴散率也減小。Chemical analysis for silicon nitride bonded silicon carbide product. determination of iron oxide content. o - phenanthroline photometric method
氮化硅結合碳化硅製品化學分析方法.鄰二氮雜菲光度法測定三氧化二鐵量Standard test methods for determination of mass fraction of carbon, nitrogen, and oxygen in silicon nitride powder
測定氮化硅粉末中碳氮氧的質量比值的標準試驗方法Standard test methods for precipitated silica - surface area by single point b. e. t. nitrogen adsorption
沉澱二氧化硅標準試驗方法.表面積單點b . e . t .氮的吸收Standard test method for precipitated silica - surface area by multipoint bet nitrogen adsorption
用多點布-埃-特氮氣吸附法對沉積二氧化硅表面面積的標準測試方法The effects of mechanical properties and microstructure of ceramic balls ( zro2, al2o3, si3n4 and sic ) on their lapping were analyzed, and the lapped surface characteristics were explored with scanning electron microscopy ( sem )
摘要通過試驗探索了氧化鋯、氧化鋁、氮化硅和碳化硅四種陶瓷球材料的性能和顯微結構對加工效果的影響；採用掃描電鏡觀察了研磨后球的表面特徵。分享友人