氧沉澱 的英文怎麼說

中文拼音 [yǎngchéndiàn]
氧沉澱 英文
oxygen precipitation
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 沉 : Ⅰ動詞1 （沉沒; 墜落） sink 2 （沉下 多指抽象事物） keep down; lower 3 [方言] （停止） rest Ⅱ形容...
  • 沉澱 : 1 （沉澱過程中析出的物質） sediment; precipitate; sedimentary accretion; precipitation; （doposit...
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. Then, the effect of heavily doped boron on ig of czochralski silicon was also investigated. it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature, ramping annealing respectively. for conventional high - low - high three - step ig annealing, the dz becomes narrower and bmd density is higher in hb samples than that in lb samples, as a result of hb enhancing oxygen precipitation

    結果顯示，單步高溫熱處理時重摻硼樣品不能形成潔凈區；降溫退火中，降溫速度較為緩慢（ 3 / min ）時能生成一定量的氧沉澱，但沒有潔凈區形成；普通高?低?高三步熱處理過程中，形成明顯的潔凈區，但相對輕摻樣品而言，潔凈區較窄，氧沉澱密度明顯偏高，說明重摻硼樣品吸雜能力強。
  3. Finally, the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper

    最後文章還系統研究了快速熱處理（ rtp ）對重摻硼硅單晶中氧沉澱的影響。
  4. The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures

    重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。
  5. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。
  6. The advance of research on oxygen precipitates in ncz silicon

    摻氮直拉單晶硅中氧沉澱的研究進展
  7. It is assumed that as enhances the out - diffusion of oxygen atoms near the surface of si wafers. ig effect is also gained in heavily b -, p - and sb - doped si wafers respectively

    在該吸除工藝下，重摻b 、 p 、 sb矽片表面也形成了不同寬度的清潔區，體內出現了較高密度的氧沉澱。
  8. A modified ig process was suggested, through which a wider denuded - zone ( dz ) on the surface of wafers and higher density of oxygen precipitation in silicon bulk were obtained

    使用改進的內吸除工藝，在重摻砷矽片表面形成了較寬的清潔區，體內形成了較高密度的氧沉澱和誘生缺陷。
  9. Secondly, the character of carbon and the effect of carbon on the oxygen deposition in annealing are studied

    其次，研究了太陽電池用矽片中碳的熱行為以及熱處理過程中碳對矽片中氧沉澱和少子壽命的影響。
  10. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  11. Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon

    鍺對重摻硼直拉硅中氧沉澱的影響
  12. What ' s more, the amount of oxygen precipitates, dislocations in silicon and the orientation of the pressed surface also influence the fracture strength. stress - strain curves were studied at room temperature. in another experiment, brittle - ductile transition ( bdt ) of ncz and cz were studied for first time

    常溫下氮硅單晶（ ncz ）及普通硅單晶（ cz ）的斷裂強度研究發現，氮的摻入提高了機械性能，並且不同氧沉澱量、位錯的存在及不同晶向對硅材料機械強度也有較大影響。
  13. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  14. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
  15. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
  16. For the substrate of heavily boron doped wafer, it has been proved that oxygen concentration is increased and oxygen precipitation is enhanced by hb ( heavily boron - doping ) during crystal growth, which is beneficial for ig and therefore improve the yield of ulsi

    另一方面，在相同的晶體生長條件下，重摻硼硅單晶氧含量升高，氧沉澱被增強，能形成有效吸雜點，提高矽片機械強度，抑制void缺陷，有利於提高ulsi的成品率。
  17. In this paper, firstly, the effect of heavy boron - doping on oxygen precipitation was investigated. after annealed at different conditions, it is found that oxygen precipitation is enhanced by heavily boron doping, especially at high temperature

    本文研究了直拉重摻硼單晶硅的氧沉澱行為，著重研究了直拉重摻硼硅單晶中的氧沉澱的熱處理、內吸雜、 rtp處理等性能。
  18. Interact of fast - neutron irradiation defects and oxygen impurity in cz - silicon was investigated in this paper. the result suggested that oxygen precipitation formed at high temperature was promoted by fast - neutron irradiation obviously. compared with ntdczsi, fast neutron irradiation accelerated precipitation in czsi much more

    本文對快中子輻照直拉硅中的缺陷和氧的相互作用進行了研究，快中子輻照促進了直拉硅中的氧沉澱，與以往ntdczsi研究結果相比，其促進作用更加明顯。
  19. Fumio shimura, et al. carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ]. j appl phys, 1986, 59 : 3251

    劉培東，朱愛平，張錦心等.碳和氮原子在氧沉澱中的作用[ j ] .半導體學報， 1999 ， 20 : 107
  20. Oxygen precipitates (useful for gettering) can reduce the yield strength (critical shear stress) up to fivefole.

    氧沉澱（可用作吸雜）會使屈服強度（臨界剪應力）降低為五分之一。
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