氫氧化釩 的英文怎麼說

中文拼音 [qīngyǎnghuàfán]
氫氧化釩 英文
vanadium hydroxide
  • : 名詞[化學] (氣體元素) hydrogen (h)
  • : 名詞[化學] (氣體元素) oxygen (o)
  • : 名詞[化學] vanadium (23號元素,符號v)
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. In 2005, 61 physical and chemical parameters were measured and analysed in sediments. these included particle size, electrochemical potential as highly anoxic sediment with negative potential is related to organic pollution, chemical oxygen demand which indicates organic pollutants, total sulphide inorganic constituents, source of the unpleasant - smelling gas hydrogen sulphide, 15 metals and metalloids aluminium, arsenic, barium, boron, cadmium, chromium, copper, iron, lead, manganese, mercury, nickel, silver, vanadium and zinc, and trace toxic organics pahs and pcbs - 16 compounds and 18 congeners respectively

    2005年,沉積物監測包括分析61種物理及學參數,其中有粒子大小電學勢有機污染促使沉積物缺,而讓電學勢呈負數值學需量顯示有機污染程度總硫物無機物,是造成難聞氣體硫的主因15種金屬及準金屬鋁砷鋇硼鎘鉻銅鐵鉛錳汞鎳銀及鋅和痕量毒性有機物多環芳烴及多氯聯苯分別為16種復合物及18種同質物。
  2. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備,在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時,用氬、混合束對沉積膜作高劑量的離子束轟擊,使得被氬離子轟擊后斷鍵的分子,再被注入降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  3. Molybdovanadophosphate tetraethylammounium nanoparticles bulk - modified carbon paste electrode and its electrocatalysis toward the reduction of hydrogen peroxide

    磷酸四乙胺納米粒子體修飾碳糊電極及其對過的電催還原
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