氫等離子 的英文怎麼說
中文拼音 [qīngděnglízi]
氫等離子
英文
hydrogen plasma-
Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited
本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。During ion source operating, alternating axial magnetic field and azimuthal electric field in discharge tube ionize hydrogen gas purified by hot palladium pipe, and form plasma, hi fifties year, research reports studied on rf ion source are numerous however most of them are concerned about application, and research reports relevant to discharge theory or experiment model are unfrequent
離子源工作時，放電空間交變的軸向磁場和渦漩電場激發放電管中經鈀管純化后通入的氫氣電離，形成等離子體。 50多年來，關于高頻離子源的研究報告很多，但是，這些研究主要都集中在應用研究方面，有關高頻無極環形放電離子源的理論與實驗模型研究不是很多。Sodium hydroxide for industrial use - part 6 : determination of iron content - atomic absorption spectrometry and inductively coupled plasma atomic emission spectrophotometry
工業用氫氧化鈉.第6部分:鐵含量的測定.原子吸收光譜測定法和感應耦合等離子體原子發射光譜測定法Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet
Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。Spectral line shifts of h - like neon in hot and dense plasmas
類氫氖在高溫高密度等離子體中的光譜漂移The design and implementation of hydrogen sensors using evanescent field fiber is introduced in this thesis. the research work mainly includes the hydrogen sensing principle of pd film, the principle of surface plasmon resonance, study of highly steady laser light, fabrication of the tapered fiber and etched fiber, the deposition of pd film, the encapsulation of sensor and the experimental results ( including the design of the set - up ) and the discussions
本論文主要圍繞實現漸逝場型光纖氫氣傳感器，開展了以下一些相關的技術性研究:鈀的氫敏感原理、表面等離子共振原理、穩定化光源的研究、拉錐型光纖和腐蝕型光纖的製作、薄膜的生長、傳感頭的封裝和傳感系統的實驗及結果分析。It comprises the study of the thin film for the hydrogen sensing and the deposition technique, a surface plasmon resonance, the field distribution around the optical fiber, analysis of the power of evanescent field, the measurement approach and the data processing etc. the hydrogen sensors using evanescent field fiber is of complex technics and high sensitive
其中涉及了氫敏感膜的研究及其生長工藝、光在光波導的傳輸模式分析、光纖中漸逝場的能量分析、光學表面等離子共振技術、氫氣傳感器的檢測技術等。漸逝場型光纖氫氣傳感器是一款工藝要求非常高，靈敏度高，穩定性強，可以進行復用的新穎的光學氫氣傳感器。The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation
通過多孔硅重磷擴散鈍化及低頻等離子體氫鈍化等多晶硅太陽電池晶界鈍化，改善了太陽電池性能。Up2h up1h method for determination of stable hydrogen isotope ratio of water from fruit juices, using isotope ratio mass spectrometry
利用等離子比質譜測量法測定果汁水中穩定氫等離子比Standard test method for determining hafnium in zirconium and zirconium alloys using the d - c argon plasma spectrometer
使用氫等離子體光譜計測定鋯和鋯合金中鉿的標準試驗方法Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation
9 ）的提高；先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。Abstract : some plasma sources in plasma microwave devices have been introduced and analyzed in this paper, the design and its driving circuit of a compact hydrogen plasma gun have been discussed in detail
文摘:介紹和分析了幾種等離子體微波器件中等離子體源，重點討論了緊湊型氫等離子體槍的設計及其驅動電路。The method of preparing the uniform coating, the techniques of thermal bonding and hydrogen plasma treatment was investigated experimentally. the optimum coating method and technological parameters was summarized
重點探索了塗覆金剛石納米塗層的方法、實現金剛石與金屬鈦的熱粘接工藝以及氫等離子體處理的工藝參數，篩選出了在本實驗系統中的最佳方法和工藝條件。Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito
Al摻雜的zno薄膜，由於具有與ito （ in _ 2o _ 3中適量摻雜sn ）薄膜相比擬的對可見光的高透過率和高電導，又因其在氫等離子體中的高穩定性等優點，已成為替代ito透明導電薄膜的研究熱點。Furthermore, they offer a number of advantages compared to the predominant ito films nowadays : ( i ) cheap and abundant raw materials ; ( ii ) nontoxicity ; ( iii ) good stability in hydrogen plasma, which is of significance for applications related to amorphous silicon solar cell. so the study on zao film is becoming fashionable
而zno ： al （ zao ）薄膜由於具有優良的光電特性而成為ito薄膜的潛在替代材料，且它還具有原材料來源豐富、成本低廉、無毒以及在氫等離子體中具有較好的穩定性等優點，是目前研究的熱點薄膜材料之一。However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito
近年來，由於al摻雜的zno薄膜（ azo ）具有與ito薄膜相比擬的光電性能（可見光區高透射率和低電阻率） ，又因其價格較低以及在氫等離子體中的高穩定性等優點，已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。The chief results and conclusion thus arrived at are as folloes : ( 1 ) the morphology and electrical properties of indium - tin - oxide ( ito ) films which were treated respectively by ethanol, naoh, sulfuric and oxygen plasma, were studied from microscopic view by atomic force microscopy, x - ray photoelectron spectroscopy and goniometer
（ 1 ）利用原子力顯微鏡、接觸角測試儀、紫外分光光度計從微觀角度研究了乙醇、氫氧化鈉、濃硫酸、氧等離子體處理對ito薄膜的表面性能和光電性能的影響。Abstract : it has been discovered that the coke formed in ch4 coupling under plasma can be eliminated via pure h2 discharge in the system. eliminating coke under plasma with positive or negative high voltage in dc electric field has been compared with that in ac field. the elimination of coke takes place only on the negative of the two electrodes in dc field, while on both electrodes in ac field. the coke on the reactor walls can be eliminated with either positive or negative high voltage and in either dc or ac field. based on the experimental facts, hypotheses of the reaction mechanism are suggested. quantity of eliminating coke depends on diametrical ratio between reactor and the electrode, input power and electrode materials
文摘:發現了等離子條件下甲烷偶聯反應中形成的積炭可以通過該體系中純氫氣放電而消除.將消除積炭使用直流電場的正高壓和負高壓與使用交流電場作了比較，發現直流電場中無論使用正高壓還是負高壓，只有陰極上的積炭可以被消除，而交流電場中兩極積炭均可被消除，反應器壁上的積炭在以上任何情況下均可被消除.基於實驗事實提出了機理假設.消除積炭的量與輸入功率、反應器對電極的直徑比以及電極材料有關This paper introduces several hydrogen production methods, including steam reforming, partial oxidation method, autothermal oxidation and plasma reforming, for fuel cell vehicle, and also points out the current technical status and future pngv goals for on - board gasoline fuel processor
摘要介紹了用於燃料電池汽車的幾種車載汽油制氫技術，包括水蒸氣重整制氫、部分氧化制氫和自熱氧化制氫、等離子法制氫，指出了現有車載汽油制氫裝置技術水平和美國「新一代汽車協調會」對車載汽油制氫技術的目標要求。分享友人