氮化法 的英文怎麼說

中文拼音 [dànhuàfǎ]
氮化法 英文
nitriding process
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  1. Treatment of wastewater containing direct copper complex azo dye by coagulation sedimentation fenton oxidation methods

    氧化法處理含直接銅絡合偶氮染料廢水
  2. Analysis and verification of silicon nitride super - micro powder synthesis with fbr - cvd technique

    法制氮化硅超微粉過程分析及實驗驗證
  3. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  4. Electroless plating method is applied to metallize the aln sbstrate

    應用化學鍍鎳的方法實現了氮化鋁的金屬化。
  5. Synthesis of ultra - fine crn powder with high purity by ammonolysis method

    氨解法制備超細高純氮化鉻粉體的研究
  6. It is reasonably designed and easily managed ; it can plate many kinds of membranes that multi - arc machine can not do, such as bnb - black, pearl black and different azotizing, oxidizing membranes with top - grade quality and combination, fit for the decorative and tools plating

    二特點該設備結構合理，操作簡單，可以鍍制各種多弧鍍膜機無法完成的膜層，槍黑珍珠黑及各種氮化氧化膜層，膜層細膩，結合力好，廣泛用於裝飾鍍膜及工具鍍膜。
  7. Ti ： fabrication of boron nitride ceramic fibers from alkylamino borazine polymer precursors by fiber drawing and heat - treatment. inventors ： miele, philippe ; toury, berangere ; bernard, samuel, etc

    摘要：本文研究了含有高密度連續碳纖維氮化硼纖維復合材料的制備方法。探討了碳纖維與氮化硼纖維不同排布對復合材料性能的影響。
  8. Chemical analysis for silicon nitride bonded silicon carbide product. determination of free silicon content. molybdenum blue photometric method

    氮化硅結合碳化硅製品化學分析方法.鉬藍光度法測定游離硅量
  9. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。
  10. Methods of test for petroleum and its products - petroleum and related products - preparation of a test portion of high - boiling liquids for the determination of water content - nitrogen purge method

    石油和相關產品.水含量測定用高沸點流體試驗區的準備.氮凈化法
  11. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  12. Synthesis and characterization of novel methyl substituted poly aryl ether ketone ether sulfone ether ketone random copolymers

    合成芳基芳酰基偶氮化合物的簡便有效的新方法
  13. Test method for water in fatty nitrogen compounds

    脂族氮化合物中水的試驗方法
  14. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  15. Influence of density and top - dressing of nitrogen fertilizer on yield of wheat with different maturing phases and response of fate of fertilizer nitrogen

    群體密度和追氮方法對不同熟相冬小麥產量效應的差異及對化肥氮去向的影響
  16. There are a lot of methods for measuring nitriding depth, incluing structural corrosion method

    現有的測量氮化層深度的方法很多，國內大多數採用組織腐蝕法。
  17. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  18. Xrd spectra show that the bulk gan particles are wurtzite structure, and the nc gan has small domain size and the structure of solid solution phase

    Xrd結果顯示經由氣凝法合成前後氮化鎵均為一六方晶系結構，利用塊狀氮化鎵生成的奈米粉體粒徑微細且是一種固溶相結構。
  19. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術，採用各種對si襯底處理的方法，如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究，通過x射線衍射技術（ xrd ） 、光致發光技術（ pl ） 、掃描電子顯微術（ sem ） 、透射電子顯微術（ tem ）等檢測，並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析，發現外延晶體的生長質量得到了明顯提高。
  20. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
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