氮氣中退火 的英文怎麼說

中文拼音 [dànqìzhōngtuìhuǒ]
氮氣中退火 英文
an
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 氣 : Ⅰ名詞1 （氣體） gas 2 （空氣） air 3 （氣息） breath 4 （自然界冷熱陰晴等現象） weather 5 （氣味...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 氮氣 : nitrogen; nitrogen gas氮氣燈 nitrogen lamp; 氮氣瓶 nitrogen cylinder; 氮氣容器 nitrogen gas conta...
  • 退火 : [冶金學] anneal; annealing; back-out
  1. We found that the cz silicon wafers preannealed by rtp in nitrogen atmosphere are significantly characteristic of ncz silicon wafer, that is, the n - o complexes related stds are also generated in the cz wafer subjected to rtf in na and subsequent proper heat treatments

    研究發現，氮氣氛下高溫rtp處理的cz硅樣品在後續熱處理中表現出了摻氮硅的退火特性，進而證明了在氮氣氛下rtp處理中氮發生了內擴散。
  2. Irradiation defects decompounded and recombined with oxygen impurity and large quantity of nucleation centers were introduced in czsi bulk during annealing at 1100. in nitrogen atmosphere, more defects were induced in fast neutron irradiated czsi than in argon atmosphere

    不同氣氛下快中子輻照直拉硅中缺陷形成的差異很大， 1100的高溫退火中，與氬氣氛相比，氮氣氛退火樣品中出現了更多缺陷。
  3. Another possible reason for this phenomenon is that with higher temperature, the mobility near defects of carbon atoms in grown carbon nanotubes would be also elevated, which gave carbon atoms higher mobility and have chance to readjus to decrease or eliminate some defects. a series of pretreatments and modifications including purification, annealing and doping were performed before hydrogen storage experiments carried out at room temperature under modest pressure ( 12mpa )

    在氮氣中進行退火處理納米碳管的儲氫性能高於在空氣中退火的納米碳管，主要原因是在空氣中退火時，納米碳管的表面引入了大量的氧官能團，而氧官能團能夠占據納米碳管的缺陷位，減少了氫的可吸附位置，阻礙氫進入納米碳管，從而降低了納米碳管的儲氫能力。
  4. High leakage currents and low - frequency dielectric relaxation were found in as - deposited capacitors after they had been post - annealed in nitrogen at 550 and subsequently annealed in oxygen at 350. the mechanism of this phenomenon was discussed

    經過高溫550氮氣退火處理后，再放入350的氧氣中退火，發現其介電特性出現了非常明顯的低頻弛豫現象，並且伴隨著漏電特徵的惡化。
  5. Additional annealing experiments in nitrogen atmosphere revealed that the heavily damaged region with hydrogen - induced defects appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high - temperature annealing process, and consequently, broaden the thickness of the box layer. this important finding may provide a possible solution to reduce the cost of the conventional simox - soi wafers while maintaining a desirable box thickness

    獨特設計的氮氣氛退火及分步退火實驗證明了原注入樣品的缺陷層中氫及氫致缺陷的存在使得在退火過程中加速外界氣氛中的氧擴散進來，並成為強捕獲中心使擴散進來的氧滯留于缺陷層從而促使氧缺陷層中的氧沉澱生長，加速了高溫退火中的內部熱氧化過程，從而形成了比傳統相同劑量simoxsoi厚得多的氧化埋層。
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