注入成形 的英文怎麼說

中文拼音 [zhùrùchéngxíng]
注入成形 英文
encapsulation molding
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. At its farthest end, three glaciers meet to dump their effluvia into the milky grey glacial water, launching massive igloo icebergs into the lake with thunderous splashes

    在最遠的一端，三條冰河匯聚到一處，將碩大的冰塊注入奶白色的河流中，冰塊互相碰撞，水花四濺，形成令人嘆為觀止的奇景。
  2. Fos + / th + / gfap + and fos + / vp + / gfap + triple labeled n - asc could be found in the mvz, pvn and son respectively ; ( 2 ) under electronic microscope, the astrocytic processes connected closely with the dendrites or axons of the neurons, where the bilateral membranes became thick. we call transiently it electron - dense areas ( edas ). the number of edas increased remarkably following hyperosmotic stimulation ; ( 3 ) when trace retrogradely, wga - hrp was microinjected into the unilateral son, pvn or nucleus of solitary tract ( nts ) respectively using the stereotaxic method, the n - ascs formed by the neurons triple - labeled with hrp / fos / th ( or vp ) and astrocytes labeled with gfap could be found in the mvz, son and pvn respectively ; ( 4 ) after being treated with heperosmotic nacl solution, intracellular calcium concentration in cultured hypothamic neurons and astrocytes increased and then decreased

    腦內gfap陽性結構也明顯增多，其分佈與fos陽性細胞分佈基本一致，表現為胞體肥大、突起粗長； ast緊密包繞在神經元周圍形成神經元- ast復合體（ n - asc ） ；在mvz 、 pvn和son三重免疫組化染色切片上可見到fos + th + gfap +第四軍醫大學博士學位論文和fos vp gfap三重標記asc ； （ 2 ）免疫電鏡下son內星型膠質細胞突起與神經元樹突或軸突之間接觸部位出現增厚的膜結構一電于緻密區（ edas ） ，高滲刺激后數量明顯增多： （ 3 ）將們個mp注入大鼠一側n卜、卜卜或孤束核（ ws ） ，分別在延髓內臟帶（ mvz ） 、 so和pvn內出現fos hrp th 、 fos hrp八p三重標記神經元和gfap陽性標記ast形成的n asc ； （ 4 ）高滲刺激使培養神經元和ast內鈣水平先升高后降低，最後維持在比高滲刺激前稍高的靜息鈣水平上。
  3. In education, the author explains that the educational innovation served as premise and security for the development of physics via in - depth analysis on the college education and educational system of physics in germany ; ln philosophy, to avoid the superficial and rigid opinions that philosophy either guides or hinders physics, which is resulted from one - way analysis on the influence of physical knowledge by specific philosophical knowledge, based on the combination of physical achievements by philosophy and profound philosophical knowledge, the author illustrates that the influence on german physics by philosophy reflects more on a kind of spirit a nd this very spirit brings the new quality into the german physics ; in mathematics, by means of analyzing integration of mathematics and physics at different stages, the author is tended to testify that the blooming mathematics in germany is the indispensable condition for the prosperity of german physics because. 2 mathematics provides language tools for the development of physics ; ln culture, by way of analyzing the common features of german physicists and connecting the brilliant german culture, the author audaciously brings forward that the wissenschaft ideas and faust ideas is the important driving force for the prosperity of the development of german physics

    在教育方面，通過對德國大學和物理教育體制的形成的分析，說明教育改革是物理學發展的先導和保證；在哲學方面，作者避免了從具體哲學知識對物理知識影響的單一方式出發而得出「要麼指導要麼阻礙」的兩種簡單僵化觀點的弊端，將哲學對物理學成就的影響和德國物理學家群體很高的哲學素養結合起來分析，說明哲學對德國物理學的作用更多的是體現在一種氣質、精神上，正是這種氣質和精神為德國物理學的發展注入了一種新的特質；在數學方面，通過對不同時期數學和物理學融合程度的分析，證明了發達的數學是德國物理學繁榮和領先的必不可少的條件，它為物理學的發展提供了語言工具；文化方面，通過對物理學家群體特點的分析聯系燦爛的德國文化，作者大膽提出其中蘊涵的wissenschaft思想和浮士德精神是德國物理學繁榮和領先的重要動力。
  4. The industry old workshop, the old warehouse utilize the new design and the pattern transformation, preserves for the history pours into the fashion, the creativity element, causes the retention the old workshop to become the modern city landscape the new picture, also promoted the design creativity industry industrial chain formation, is good model which the city history and the future will continue

    工業老廠房、老倉庫運用新的設計和模式改造，為歷史的留存注入時尚、創意的元素，使保留的舊廠房成為現代城市景觀的新景象，也促進了設計創意產業的產業鏈的形成，是城市歷史與未來承接的良好典範。
  5. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  6. We have developed many treatment equipment covering vacuum aluminum plating, decorative plating film, hard film plating, ion injection, vacuum winding film plating, and vacuum thermal treatment equipment, forming 12 large series including over 50 specifications and types

    先後開發了真空鍍鋁裝飾鍍膜工具硬質鍍膜及離子注入真空卷繞鍍膜和真空熱處理設備。已形成12大系列， 50餘種規格型號。
  7. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  8. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  9. It emphasizes three parts : make up the chinese teachers " quality of advanced educational idea which are wide chinese educational idea, human educational idea, all - life study educational idea, information educational idea. it also analyzes the creative ability quality of chinese teachers. that ' s to say, teachers should improve the own creative ability, emphasize to make the students " creative ability, make the own teaching unique, use the ability quality of modem educational technology which is using the muti - media technology and the ability of information technology

    第一部分也談高尚的思想品德素質，但注入了筆者一些新的思考；第二部分重點從大語文教育觀、人文主義教育觀、終身學習教育觀、信息教育觀三方面的內容構建語文教師先進的教育理念素質；第三部分闡述語文教師必須具備的知識結構；第四部分重點闡述語文教師創造性的能力素質，既創造型教師的特徵、創造型教師的職能、教師要形成自己鮮明的教學特色；教師應用現代教育技術的能力素質，既利用多媒體技術、信息技術的能力。
  10. 7mpa / km in the center of the zone ( 6 ) in the hot dry rock geothermal energy extraction system, after the system start to operate, the normal stress of crack show the pronounced influence depending on the temperature ' s change in a month, there are a marked drop in temperature nearby the injection well, forming a lower stress area, with the heat extraction, the temperature ' s change even gradually, but the temperature descend quickly nearby the production well, forming a new lower stress area

    （ 6 ）高溫巖體地熱開發中，裂縫面法向應力受溫度變化的顯著影響，在系統開始運行的一個月內，注入井附近區域其溫度降低較快，形成低應力區;隨開采時間的延長，其溫度變化逐漸平緩，而生產井附近區域溫度降低加快，逐漸形成新的低應力區。
  11. Mushy pvc ( dop + additives ) - beater ( stir well ) - vacuuming ( materiel has been completely dewatered and debubbled after vacuuming ) or mix with color paste which has been processed by ball mill and then dropped into mould cavity by needle cylinder ) - solidified in the constant temperature box ( color fixing ) - input basic material - sent to the constant temperature box in the flowing way and then forming and then forming and sent out automatically - cooled by fan - finished products

    糊狀pvc （增塑劑dop +助劑- - -打漿機攪拌均勻- - -抽真空處理） （真空機處理后的物料已完全脫離水分和氣泡）或球磨機處理后的色漿混合後用針筒滴入模具形腔- - -放入恆溫箱中固化（色彩定形） - - -注入底料- - -流水式送入恆溫機，定型后自動送出- - -風扇冷卻- - -成品
  12. Results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implanted, which means that boron implantation significantly improves the electronical isolation between devices and reduces the sidegating effect

    結果表明，採用注入隔離工藝制備的mesfet的旁柵效應比採用自隔離工藝制備的mesfet的旁柵效應要小。這說明，採用注入隔離可以形成更好的器件隔離，減小器件的旁柵效應。
  13. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  14. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  15. Chang - 6 oil - bearing beds, one of the most important oil - bearing beds in yanchang formation, is a set of progradational deposits, which is formed by rivers pouring into the shallow - water platform of the lake after the greatest transgression in chang - 7 stage

    作為陜北延長組主力油層之一的長6油層組，是在長7最大湖進之後形成的淺水三角洲背景下，山河流注入充填而成的一套水退型沉積。
  16. Flow mark is the imprint of the movement of melting materials and is in linear pattern to surround runners. the flow mark is resulted from fast condensation of materials inside the mold cavity and is the lines caused when the materials run in

    流紋flow mark是熔融材料流動的痕跡，以澆口為中心而呈現條紋形狀，流紋是先注入模腔內之材料冷卻過快，而與其後流入之材料間形成界線所致。
  17. Spread the rest of the chicken paste on an oiled plate, trace life in the paste with minced mushrooms, steam for 10 minutes. steam the coated chicken pieces, cut into slices, steam again for 8 minutes, transfer to a place " life " on top, decorate with mushrooms slices and bird nest pieces. bring the soup to the boil, skim, pour into the plate

    白煮雞拆去骨頭，撕碎加料酒，精鹽腌入味將雞料的2 3攤在白煮雞塊上，余料攤在抹了油的盤內成圓形，劃出「疆」字，填入香菇末，上籠蒸10分鐘，將蒸好的肥雞改成小象眼塊，再蒸8分鐘，扣入缽「疆」字放在雞塊上，口蘑燕菜擺四周，三套湯燒開去沫，注入缽即成。
  18. It takes the essence of the action as putting the patriotism ideology into the development of the hui nationality, laying a foundation for the hui nationality ' s patriotism ideology since modem times, opening the new page of the hui nationality ideology history, and having the important history position

    認為這場運動的本質是將愛國主義的思想深深地注入到回族的發展中，為近代以來回族愛國愛教思想的形成奠定了堅實的基礎，翻開了回族思想史的新頁，具有重要的歷史地位。
  19. A sand, which was cured, distill silicon of it, then inpoure knowledge, it come into being cmos chip, and cmos chip change the world

    一粒沙子，經過人類加工，提取出硅元素，再注入知識就形成了晶元，從而推動了世界的改變。
  20. 3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source

    3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。
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