流體晶體管 的英文怎麼說

中文拼音 [liútǐjīngtǐguǎn]
流體晶體管 英文
fluid tra istor
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 體 : 體構詞成分。
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 流體 : [物理學] fluid; fluor流體力學 fluid mechanics; hydromechanics; 流體生物學 hydrobiology; 流體運動學 hydrokinematics
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. We have been considering the transistor with a current fed into the emitter.

    我們所研究的晶體管都是把電流饋入發射極。
  2. Standard test method of measurement of common - emitter d - c current gain of junction transistors

    結型晶體管共射極直流增益測量的標準試驗方法
  3. Standard test method for measuring transistor and diode leakage currents

    晶體管及二極體泄漏電流測量的標準試驗方法
  4. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  5. However, in our nation, the research on gan - based microelectronic devices is in the early stage, and a great deal of vestigation is still needed to perform on separative processes of gan devices. due to the lack of algan / gan heterojunction materials in the country, a few researches on algan / gan were made, and the investigation on schottky rectifiers is much less

    在國內， gan基微電子器件的研究剛開始起步，制備gan分立器件的工藝尚處于探索研究階段，特別是受algan gan二維電子氣材料來源的限制，國內algan gan基的場效應晶體管的研究開展得較少，關于肖特基整流二極體的研究更少。
  6. The flow of post - sim with synopsys nanosim amp; star - rcxt

    的晶體管級后模擬流程
  7. The transformer isolates the transistors with regard to d-c bias voltage.

    變壓器可在兩個晶體管之間隔離直流偏壓。
  8. Railway rolling stock. functional general requirements. transistorized ballasts. generalities and tests

    鐵路機車車輛.一般功能要求.晶體管化鎮流器.概述及試驗
  9. Railway rolling stock. functional general requirements. transistorized ballasts. collection of particular leaves

    鐵路機車車輛.一般功能要求.晶體管化鎮流器.特殊葉片間的聯系
  10. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  11. The design and analysis of vertical pnp transistor was accomplished through the relationship between carriers lifetime of epitaxy layer and current gain, rate of surface combination and leakage current, carriers lifetime of epitaxy layer and switch speed

    從外延層載流子壽命與晶體管放大倍數，表面復合率與漏電流，以及外延層載流子壽命與晶體管開關速度等方面對于輸出級縱向pnp管進行了較為詳細的設計與分析，達到了電路中對輸出級縱向pnp管主要參數指標的要求。
  12. Carrier drift transistor

    載流子漂移型晶體管
  13. Current sources are most useful in modeling the behavior of transistors.

    電流源在模擬晶體管特性時極其有用。
  14. After constructing a 35 - nanometer - high channel between two silica plates and filling it with potassium chloride saltwater, they demonstrated that voltage applied across this nanofluidic transistor could switch potassium ion flow on and off

    他們在兩片硅板之間製作35奈米高的通道，注入氯化鉀溶液，示範在這個奈米流體晶體管上施加的電壓可開啟或阻斷鉀離子流。
  15. The electrical current can be supplied without any affection to the transistor ( for the use of el pixels and signal line ), which in the semiconductor equipment

    提供一種半導體裝置，在向負載（ el像素及信號線）供給電流的晶體管中，可以不受偏差的影響供給正確的電流。
  16. Silicon offers the opportunity to build conventional and nanofluidic transistors onto the same chip for computerized control of chemical and biological processing

    硅讓我們有機會將傳統和奈米流體晶體管做在同一張晶元上，藉由計算機控制化學和生物流程。
  17. The team hopes to link nanofluidic transistors together into an integrated circuit within the year as the next step to harnessing massive numbers of transistors in parallel

    這個研究團隊的下個目標，是在今年內將奈米流體晶體管連結成集成電路，以便同時控制多個晶體管。
  18. To obtain a high resolution cmos current - steering digital - to - analog conveter, the matching behavior of the current source transistors is one of the key issues in the design

    在高速高精度電流型dac的設計中，電流源晶體管的匹配問題是設計的關鍵。
  19. The developmental requirement of power systems and the continuous appearance of new technology are the source of the evolution of the theory and technology in relay protection of power systems. with the development of computer technology, relay protection has entered into digital age

    電力生產發展的需要和新技術的陸續出現是電力系統繼電保護原理和技術發展的源泉，計算機技術的發展，使得繼電保護已從電磁型、整流型、晶體管型、集成電路型進入了數字型的時代。
  20. At the same time, it is nessary to shift the crossing point of the switch transistor ’ s differential control signals, in such a way that these transistors are never simultaneously in the off state

    同時，調低控制信號的交叉點，以防差分開關同時斷開影響dac的性能。 3 .研究了電流源晶體管的失配特性。
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