流體激光器 的英文怎麼說

中文拼音 [liútǐjīguāngqì]
流體激光器 英文
fluid state laser
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 體 : 體構詞成分。
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 流體 : [物理學] fluid; fluor流體力學 fluid mechanics; hydromechanics; 流體生物學 hydrobiology; 流體運動學 hydrokinematics
  • 激光器 : [光學] （光激射器） laser （縮自 light amplification by stimulated emission of radiation）; optic...
  • 激光 : [物理學] laser 激光靶 laser target; 激光報警器 laser avoidance device; 激光玻璃纖維 laser fibre; ...
  1. They can simulate the temperature field of the 2 kw crosscurrent co2 laser, draw some relative function charts and display the laminas of cooling fans in three - dimensions

    分別模擬2kw橫流co _ 2激光器箱體溫度場的分佈情況、繪制若干相關的函數圖象和以三維圖象顯示風機葉輪的幾何形狀。
  2. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  3. For micro - cavity semiconductor laser, station model is proposed in this paper and its steady - state and instantaneous characteristics when the coupling efficiency of spontaneous emission into a lasing mode is equal to 1 are analysised. for current noise, sp noise, noise, p noise, as well as current modulation, sp modulation, modulation and p modulation, using small - signal approximation, we derive the laser ' s corresponding transfer functions. and we calculate their signal - to - noise ratio ( snr ) gain in various parameters through frequency domain analysis in the premiss of large input snr

    本文對于微腔半導體激光器，提出站模型，能夠較直觀簡潔地分析微腔半導體激光器的穩態和瞬態特性，利用此模型對具有重要實用價值的= 1的微腔半導體激光器進行了討論；對于電流i噪聲、自發發射壽命_ （ sp ）噪聲、自發發射因子噪聲、光子壽命_ p噪聲，以及電流調制、 _ （ sp ）調制、調制、 _ p調制，在小信號近似下，得到了相應的激光器的傳遞函數；在大信噪比的前提下，對激光器進行了頻域分析，分別計算了它們在不同參數下的信噪比增益，分析了其抗噪聲性能。
  4. For phonetic signal modulation, if the pass band range of the band pass filter ( bpf ) is 300hz - 3400hz, the anti - noise properties of laser are approximately independent of bias current and parameters of the cavity ; when the pass band range of bpf increases to a certain degree, modulating bias current and parameters of the cavity can improve the anti - noise properties of laser

    對語音調制情況，如帶通濾波器的通帶范圍取為300hz - 3400hz ，則激光器的抗噪聲性能基本不依賴于偏置電流和腔內參數；當帶通濾波器的通帶范圍增大到一定程度，調整偏置電流和腔內參數可以實現半導體激光器的高抗噪聲性能。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices

    垂直腔面發射半導體激光器（ vcsel ）與傳統的邊發射半導體激光器相比，它具有發散角小、單縱模工作、非常低的閾值電流等優點，尤其它適於二維面陣集成和與其它光電子器件集成。
  7. Quantum capture is a complicated process and capture time computation and experiment test are provided. it is difficult to ascertain carrier ' s transportation and distribution in multiply quantum wels and tunneling time and heating emitting time computations are also provided. optical gain whose formula is complicated is a critical parameter and it is useful for structuring model to obtain a concise formula by means of experiment curve

    詳細說明了確定半導體激光器速率方程的一些重要參量的方法，如：載流子在三維sch區的輸運行為對激光器的調制特性有較大影響；量子阱對載流子的捕獲是一個復雜的過程，文中給出了量子捕獲時間的計算方法以及實驗證明；多量子阱中載流子輸運與分佈也是相當復雜的問題，文中給出了隧穿時間與熱發射時間的計算方法；光增益是關鍵的參量，它的解析式相當繁瑣，由實驗曲線擬合其較為簡明的經驗式，對定模工作是有利的。
  8. In this system, cpld controls semiconductor laser, the fet controls surface light source by the way of changing input voltage to control current, and the pulse signal of 1khz produced by at89c2051mcu controls yag laser

    系統中使用cpld控制半導體激光器，使用場效應管通過改變輸入電壓控制電流的方法來控制面光源，通過at89c2051單片機產生1khz的脈沖信號來控制yag激光器。
  9. Solid laser pumped by semiconductor laser has the advantages of laser diode and solid laser, so it develops rapidly in recent years and gets the extensive application in the fields of military, communication, processing and scientific research, etc. in order to meet the demands for laser power of semiconductor solid laser pump solid yag laser, i synthetically adopt the singlechip digital automatic control technology which is extensively used in the intelligent instruments, products of electromechanical integration and automatic control system, lcd technology, pc switch technology and steady voltage, invariable current technology

    半導體激光泵浦的固體激光器由於兼有了激光二極體和固體激光器的雙重優點，近年來得到迅速發展，並在軍事、通訊、加工和科研等領域中得到廣泛的應用。本文針對半導體固體激光器泵浦固體yag激光器系統對激光電源的要求，並且綜合運用了當前在智能儀表、機電一體化產品、自動控制系統中應用廣泛的單片機數字化自動控制技術、 lcd顯示技術、 pc開關技術及穩壓、恆流技術，研製了脈沖半導體激光電源。
  10. There are many approaches to achieve the purpose, and one of the perfect them is tunnel - cascaded multi - active regions large cavity ld structure, in which not only the effective thickness of the active region increase but also obtain lds ’ low threshold current and high slope efficiency and other properties

    有多種途徑實現ld光束特性的改善，其中採用多有源區隧道結級聯大光腔結構的半導體激光器是既增加有源區等效厚度而又保證ld低閾值電流和高斜率效率等特性的最佳途徑之一。
  11. The equivalent cavity model is used to deduce the threshold condition of the ecld, and the expression of the threshold carrier density n ( v ) when ecld is tuned to oscillate at different frequencies has been obtained. using the expression of n ( v ) and the carrier dependent refractive index, the simple basic equation describing the bistable characteristics has been derived after choosing an appropriate reference frequency nf

    通過建立等效腔模型來推導外腔半導體激光器的閾值條件，得到ecld在不同頻率v振蕩所需的閾值載流子密度n （ v ）表達式，利用該表達式及相關的折射率表達式，在選擇合適的參考載流子密度n _ f后，導出了一個描述雙穩所需的基本方程。
  12. The design of current supply for diode laser

    半導體激光器用電流源的設計
  13. In this work, based on the threshold condition of the fiber grating external cavity semiconductor laser ( fgesl ) which the phase of the fiber grating has been included, the effect of the temperature variation and the fg external cavity length on the lasing wavelength of the fgesl has been investigated theoretically. in addition, we have used the phase condition of fgesl to get the longitudinal mode distribution of fgesl, then the influence of the injected current on the output characteristics of fgesl has been studied

    基於此，本文中利用陽實際的反射相位分佈，計及半導體激光器（ ld ） 、外腔及光纖光柵（ fg ）三者的共同作用，根據fgesl滿足的閩值條件，從理論上研究了溫度及外腔長度的變化對fgesl激射波長的影響;根據fgesl中縱模所滿足的相位條件得到其縱模分佈后，利用fgesl滿足的多模速率方程，研究了ld的注入電流對fgesl輸出特性的影響。
  14. In this paper, after studying the technology of virtual instrument and the characteristics of ld, we developed the ld test system using the design idea of virtual instrument 。 the system is mainly used for test the threshold current, differential efficiency, v - i characteristic and p - i characteristic of ld module

    本課題在對虛擬儀器技術和半導體激光器各項性能參數深入研究的基礎上，採用虛擬儀器的設計思想，研究開發了基於虛擬儀器技術的半導體激光器特性參數檢測系統。該系統主要面向組裝后的激光二極體組件，對其進行電流閾值（ ith ） 、光電特性（ p - i ） 、電抗特性（ v - i ）等主要特性的測試。
  15. As a result, a theoretical model of fiber grating external cavity semiconductor lasers including the reflectivity distribution of fiber grating has been presented in this paper. based on the model, the laser characteristics such as the threshold current, mode suppression ratio etc. have been specified

    利用該模型對光纖光柵外腔半導體激光器的閾值電流、模式抑制比等進行了研究，得到了一些新的結論，並對此結論作出了合理的解釋。
  16. Because quasi - fermi levels of a laser diode ( ld ) vary with the carrier density, it is predicted that a new type of hysteresis loop should occur for the current passing ld while a hysteresis loop appears on the power - frequency curve of the ecld. an explicit analytical expression for the frequency width of the hysteresis loop and the condition for the formation of the hysreresis loop has been deduced

    預測了由於半導體激光二極體（ ld ）的準費米能級之差隨ld內線流子密度的變化而變化，因而，在調諧外腔半導體激光器的輸出功率?振蕩頻率曲線上出現雙穩環的時候，通過ld的電流也應出現一個伴隨的新型雙穩環? ?電流雙穩環。
  17. The results of numerical simulation show that for various kinds of noise without modulation the anti - noise properties and the output quality of laser can be improved by selecting appropriately bias current and parameters of the cavity

    數值模擬的結果表明，對于無調制時的各種噪聲，適當選取偏置電流和腔內參數可以提高微腔半導體激光器的抗噪聲性能或激光輸出的質量。
  18. Procedures for determining threshold current of semiconductor lasers

    半導體激光器閾值電流的測定程序
  19. Based on the above, we have made a research on the fabrication technology of two - dimensionally ( 2d ) arrayed surface - emiting lasers, and have obtained two - dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface - emiting lasers laser for high power output

    在此基礎上進行了面發射半導體激光器二維（ 2d ）列陣的制備研究，初步獲得了具有較低閾值電流密度和較高功率的45偏轉鏡面發射陣列半導體激光器，為研製高可靠性、高功率、低閾值電流的面發射陣列半導體激光器奠定了一定的基礎。
  20. High power semiconductor lasers are widely used in communication, surgery, military, printing and optical pump. but for traditional laser, the output optical power, which is increased by increasing the injecting current, will be limited by the electro - thermal destroy and the catastrophic optical damage ( cod ) at high optical power

    大功率半導體激光器在光通訊、醫療、軍事、印刷和光泵浦等領域有著廣泛的應用，然而當通過增加註入電流提高傳統半導體激光器的光束出功率時，要受到電熱燒毀和光腔面災變性損壞（ cod ）的限制。
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