流體薄膜 的英文怎麼說

中文拼音 [liútǐbómó]
流體薄膜 英文
fluid film
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 體 : 體構詞成分。
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 流體 : [物理學] fluid; fluor流體力學 fluid mechanics; hydromechanics; 流體生物學 hydrobiology; 流體運動學 hydrokinematics
  • 薄膜 : thin film; film; diaphragm
  1. Simulation of fluid flow of an agitated thin - film evaporator

    薄膜蒸發器內流體流動模擬
  2. 6 the zn3n2 is prepared on focus glass substrate at low temperature. and for the first time, a p - zno with a carrier density of 1017 ? cm - 3 is obtained by thermal zn3n2 in an oxygen ambient

    5 、用等離子體增強的化學汽相沉積的方法制備了zn3n2薄膜，首次通過熱氧化zn3n2的方法，制備出了受主型載流子濃度為1017cm - 3的p - zno薄膜。
  3. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  4. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  5. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  6. While successfully used in measuring the thermal properties of solid material, such as bulk samples and thin films, 3 method is seldom applied to the fluid

    摘要3法已成功應用於體態、薄膜等材料導熱系數的測量，但還很少應用於流體領域。
  7. Oxygen diffusion transport and electrochemical reaction in the oxygen cathode of direct methanol fuel cell ( dmfc ) have been expressed with the tffa model. model calculation has been carried out to investigate the effects of structural parameters of the dmfc cathode on the electrode performance, which is respectively represented by the curve of cathode overpotential versus current density. much attention has been paid to parameters including the porosity of the reaction layer, the thickness of the thin - film on the flooded - agglomerate, the radius of the flooded - agglomerate, the volume fraction of the flooded - agglomerates in the reaction layer

    本文首先運用tffa模型描述直接甲醇燃料電池（ dmfc ）陰極氧氣的傳遞和電化學反應過程，研究了過電位-電流密度曲線受陰極結構參數變化的影響程度，其中著重考慮了以下幾個參數：催化層的孔隙率，浸漬聚集體薄膜的厚度，浸漬聚集體的半徑，浸漬聚集體在催化層中的體積分數。
  8. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻薄膜、石英等光學材料離子束刻蝕特性，分別以ar氣和chf3為工作氣體，研究光刻膠、鉻薄膜、石英等的刻蝕速率隨離子能量，束流密度和離子入射角度的變化關系，得到刻蝕速率與影響因素的擬合方程，為掩模的製作工藝路線提供了實驗依據和理論指導。
  9. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  10. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  11. The equipment adopts centrifugal sliding plow groove rotor and is the newest structure evaporator at present. it can form membrane under the condition of small flow. comparing with that of fixed space drag evaporator, its evaporation capacity can increase 40

    本設備採用離心式滑動溝槽轉子，是目前國外最新結構蒸發器，在流量很小的情況下也能形成薄膜，在簡體蒸發段內壁表面附著處理液中的淤積物可被活動刮板迅速移去，和固定間隙的刮板蒸發器相比，蒸發量可提高40 69 。
  12. The temperature sensing layers each constructed of 28 copper and nickel thermocouples placed in series to form a differential thermopile

    該薄膜熱流計是由28對熱電偶組成的熱電堆，大小為38 22mm ~ 2 ，總體厚度為1mm 。
  13. Harmonized system of quality assessment for electronic components. sectional specification. fixed metallized polycarbonate film dielectric d. c. capacitors

    電子元器件質量評估協調體系.分規范.直流金屬化聚碳酸酯薄膜固定電介質電容器
  14. Harmonized system of quality assessment for electronic components. sectional specification. blank detail specification. fixed polystyrene film. dielectric d. c. capacitors

    電子元器件質量評估協調體系.分規范.空白詳細規范.直流聚苯乙烯薄膜固定電容器
  15. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  16. For newtonian fluid, the influence of the plate undulations, the reynolds number and the thickness of the film are shown by parameter studies ; for non - newtonian fluid, the shear - thinning coefficient on the film flow is shown by parameter studies

    在薄膜流動過程中，考慮波形板的輪廓形狀參數變化、流動中雷諾數的大小、薄膜厚度的變化以及非牛頓流體的剪切變稀系數對薄膜流動的流變特性影響。
  17. Standard guide for selection of test methods to determine rate of fluid permeation through geomembranes for specific applications

    透過特殊用途土工薄膜的流體滲透率測試方法選擇的標準指南
  18. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  19. Srtio _ 3 ( sto ) thin films exhibit a large electric field dependence of dielectric permittivity. the microwave surface resistance of yba2cu3o7 - x ( ybco ) is much lower than that of the normal conductor. the typical value of rs for ybco epitaxial thin film is smaller than 1 m

    在低溫下， srtio _ 3 （簡寫為sto ）薄膜具有強烈的非線性介電性質，即:介電常數隨外加直流電場變化而變化; yba2cu3o7 - x （簡寫為ybco ）具有極低的微波表面電阻， rs （ 10ghz ， 77k ） < 1m ，而且它們的晶體結構相似，晶格常數匹配以及化學性質相容。
  20. Cu - fe thin films were fabricated by a direction - current ( dc ) magnetron sputtering system

    本文首先採用直流磁控濺射鍍膜方法制備了cu - fe過飽和固溶體薄膜。
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