液封直拉法 的英文怎麼說
中文拼音 [yèfēngzhílāfǎ]
液封直拉法
英文
lec-
Liquid encapaulated czochralski - grouwn gallium arsenide single crystals and as - cut slices
液封直拉法砷化鎵單晶及切割片In this paper, the author demonstrated the basic principle, development history and characters of high - press liquid - enveloped czochralski method ( leg ), and its application in producing the gap semi - conductors, at the same time of introducing the general situation of them
本文論述了高壓液封直拉法的基本原理、發展歷史、特點，該法在半導體材料行業的應用及應用中的影響因素，化合物半導體材料磷化鎵的概況、高壓液封直拉法在制備該材料時的應用。Liquid encapsulated czochralski ( lec ) si - gaas is widely used in the microwave device and the substrates of high speed digital optic - electronic integrated circuits, and it has become one of major materials in information industry
液封直拉法生產的半絕緣砷化鎵單晶（ lecsi - gaas ）被廣泛用於微波器件和高頻集成電路的襯底材料，成為當代信息產業的重要材料之一。By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。Especially, mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively. therefore, it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導體場效應晶體管（ mesfet ）器件是超大規模集成電路和單片微波集成電路廣泛採用的器件結構，因此研究lec法生長si - gaas （ lecsi - gaas ）襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關器件的設計及製造是非常必要的。分享友人