淀積器 的英文怎麼說
中文拼音 [diànjīqì]
淀積器
英文
deposit gauge-
The reactors for this type of deposition are easily scaled to accommodate 125-or 150-mm wafers.
這種淀積反應器很容易達到適應125或150mm的基片。As a protective film, the passivation technique which consists of ( nh4 ) 2sx solution as pretreatment, and then low - temperature ( 80 ) sinx film, finally high - temperature sinx film should be adopted
在此基礎上提出了較佳的鈍化條件：先以濕法硫鈍化作為gaas器件表面鈍化，再用低溫（ 80 ~ ） sin _ x膜保護硫鈍化表面，最外層淀積高溫（ 230 ） sin _ x膜。The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics
用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。Medico - surgical equipment - materials for ancillary positioning instruments for surgical instrument - martensitic, precipitation hardening, austenitic and austeno - ferritic stainless steels
外科設備.外科設備的輔助器械用材料.馬氏體淀積硬化奧氏體和奧氏鐵素體不銹鋼Chen b l, et al. rftir measurement on backside thinned detector film of insb infrared focal plane arrays [ a ]. proc. spie [ c ]. 2000, 4086. 155 - 157
陳伯良，朱建妹，辛田玲，等.紅外焦平面器件用高密度微細銦珠陣列淀積再流成形方法[ p ] .中國專利: 98121916 . 0 ， 2001 - 4 - 13Particulates can emanate from process equipment (e. g., in cvd and etch reactors)as well as from humans (from street clothes, skin flakes, etc. )
塵粒也能由工藝設備（如化學氣相淀積和刻蝕反應器）以及工作人員（身穿的外套，體表的皮屑等）而產生。4. investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation, respectively
4 .分別對300 c下採用等離子體增強化學氣相淀積（ pecvd ）和700 ~ 800 c下採用熱氧化技術制備sigehmos器件柵介質薄膜進行了研究。分享友人