淀積工藝 的英文怎麼說

中文拼音 [diànjīgōngyì]
淀積工藝 英文
deposition process
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  1. The decorous and extending far chinese craft art history accumulate is we design to just think not dried up of headspring, but modernize the market consumption choice, exactly we put forth new ideas to pursue the product motive place of the high personal status, high quantity continuously

    厚重綿長的中國工藝美術歷史積淀是我們設計才思不竭的源泉，而現代化市場消費選擇，正是我們不斷推陳出新追求產品高品位、高質量的動力所在。
  2. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  3. In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully.

    和化學氣相淀積工藝相反，雖然在操作中對于固體砷還是必須非常小心掌握，但是，分子束外延不需要龐大的安定保險裝置。
  4. The safety problems are more severe for low-pressure depositions because the processes often use concentrated gases.

    對于低壓淀積來說安全性問題更為突出，因為這種工藝通常使用高濃度的氣體。
  5. Today, in addition to its historical and cultural heritage, the ancient culture mall features a large variety of antiques and collectibles

    今天，擁有深厚歷史文化積淀的古文化街以形形色色的古玩和民間工藝品吸引著八方來客，是觀光購物的理想去處。
  6. Various factors affecting the refractive index and the deposition rate of the deposited films are studied to optimize growth conditions of the films. the microstructures and optical properties of the films are characterized by a prism coupler, a fourier transform infrared spectroscopy ( ftir ) and an atom force microscopy ( afm )

    研究了薄膜折射率和淀積速率與工藝參數之間的關系，通過棱鏡耦合儀、傅立葉變換紅外光譜、原子力顯微鏡、掃描電子顯微鏡等測試手段，分析了薄膜的結構和光學特性。
  7. In the depositing process, small angle x - ray diffraction method was used to measure thin films repeatedly, form which the optimized parameters of depositing soft x ray thin films were gained. under the parameters, five soft x ray multilayer mirrors were fabricated

    在多層膜的淀積過程中，使用小角x射線衍射的方法對多層鏡進行了反復的標定，獲得了軟x射線短波段多層膜反射鏡沉積的優化工藝參數。
  8. Furthermore the cells on polyimide can be fabricated by roll - to - roll processing and the high price of solar cells can be decreased. so the solar cells deposited on polymeric film substrate have a promising prospects. in this paper, we investigated the properties of thin film material deposited on polyimide

    我們在原有玻璃襯底的pecvd工藝基礎上，對設備進行改進，使其適合於柔性襯底上的薄膜淀積；並且我們作了大量的實驗，探索柔性襯底上淀積薄膜材料的工藝參數。
  9. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  10. Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied, since the etching process can be controlled by the ph value

    3 .初步研究了利用pecvd淀積si3n4薄膜的工藝，討論了影響薄膜質量的相關工藝參數;初步研究了用icp刻蝕sio2和cr的相關工藝;通過分析不同濃度tmah腐蝕液在不同溫度下其ph值的變化，研究了以溶液ph值作為腐蝕溶液的控制參數。
  11. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias - sputter deposition ( see section 9. 2. 4 ) or by using planarization

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見9 2 4節）或用平面化工藝來近似獲得。
  12. Particulates can emanate from process equipment (e. g., in cvd and etch reactors)as well as from humans (from street clothes, skin flakes, etc. )

    塵粒也能由工藝設備（如化學氣相淀積和刻蝕反應器）以及工作人員（身穿的外套，體表的皮屑等）而產生。
  13. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  14. ( 1 ) two edt monomer synthetic paths have been investigated. ( 2 ) using the method of depositing the pedt film on the glass base, the affect of processing and environmental conditions - - such as the polymerizing temperature, the state of the polymer material, the polymerization correctives, the drying temperature, and the amount of the solution etc. - - to the pedt material ' s electroconductivity has also been examined in this paper

    主要研究內容包括： （ 1 ） edt單體合成路線的兩種方案，以及具體的制備過程； （ 2 ）在玻璃基片上淀積pedt膜層，研究了聚合溫度、聚合物狀態、聚合改良劑、烘乾溫度、溶劑含量等工藝及環境條件對pedt材料電導率和成膜速度的影響。
  15. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  16. Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more

    課堂講授和實驗課重點介紹了基本的工藝技術，如擴散、氧化、光刻、化學汽相淀積以及其它。
  17. Secondly, a novel technology is proposed which includes several key steps such as lpcvd ( low pressure chemical vapor deposition ) nitride silicon and cmp ( chemical mechanical polishing )

    其次，設計包含低壓淀積氮化硅和化學機械拋光（ cmp ）等關鍵步驟的新的soi介質隔離工藝流程。
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