淀積的 的英文怎麼說

中文拼音 [diànjīde]
淀積的 英文
illuvial
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 的 : 4次方是 The fourth power of 2 is direction
  1. Al and its alloys adhere well to thermally grown and to deposited silicate glasses.

    鋁和它的合金能很好地粘附在熱生長的和淀積的硅酸鹽玻璃上。
  2. The higher value is comparable to those obtained in cvd epitaxy.

    這個高的數值可以和從化學氣相淀積外延得到的數值相比擬。
  3. The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the damascene process is the main stress. the thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures

    對測量結果的分析得出金屬薄膜的淀積是造成銅互連線中應力的主要原因，熱應力在銅互連線應力中占較大比例，熱處理后銅互連線中應力減小。
  4. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  5. Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in fig. 9.

    砷化三氫的反應是典型的摻雜化學反應，圖9顯示了該反應的淀積過程。
  6. In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully.

    和化學氣相淀積工藝相反，雖然在操作中對于固體砷還是必須非常小心掌握，但是，分子束外延不需要龐大的安定保險裝置。
  7. ( 3 ) the spatial analysis results showed that the variation of soil clay content was moderate at the direction of vertical section. the soil clay content was highest at the layer of 20 - 40cm, which showed that it is an eluvial accumulation horizon according to long - term cultivation, irrigation and rainfall

    （ 3 ）土壤粘粒含量在垂直方向上呈中等變異，整個土體在20 - 40cm土層處的粘粒含量最高，說明土壤表層由於長期耕作、灌溉降雨，土壤粘粒含量有一個淋溶淀積過程。
  8. Soil caco3 eluviation and deposition process is the most important development and evolution process of soil, from parent material to mature soil in the loess plateau, arid and semiarid area

    土壤碳酸鈣（ caco _ 3 ）的淋溶淀積過程是黃土高原以及乾旱和半乾旱地區土壤形成發育的主要過程之一，也是地球化學過程的主要內容。
  9. Soil caco3 eluviation - illuviation is a relatively complicate process, soil co2 is one of the important effect factors, which influences soil caco3 through controlling soil ph value and caco3 solution capability

    土壤碳酸鈣淋溶淀積是一個復雜的過程，土壤中的co _ 2通過控制土壤ph值和碳酸鈣的溶解性來影響土壤碳酸鈣的淀積，是重要的影響因子之一。
  10. The effect of deposition parameters on cdse target performances of fpc tube

    靶面淀積參數對攝像特性的影響
  11. They do not have an illuvial horizon enriched with either silicate clay or with an amorphous mixture of aluminum and organic carbon

    沒有富含硅酸鹽粘土或鋁有機碳非晶質混合物的淀積層。
  12. Caco3 not only affects soil physical and chemical characteristics but also causes co2 change in the air, because caco3 is main components among the total pool of inorganic carbon of soil. this paper systematically summarized and analyzed general development characteristics of soil profile caco3 in loess hill gully area including source, content, forming - condition, distribution and illuviation - depth of caco3, which will have the most important significance for the further studies on global soil and climate change

    碳酸鈣在土壤剖面中淀積的深度和類型是黃土高原土壤發育的重要標志，鈣積層是黃土高原土壤發育環境的歷史信息庫，同時土壤碳酸鈣作為土壤無機碳庫重要組成，它通過溶蝕后再結晶與大氣co _ 2之間進行物質交流來影響全球氣候變化。
  13. The safety problems are more severe for low-pressure depositions because the processes often use concentrated gases.

    對于低壓淀積來說安全性問題更為突出，因為這種工藝通常使用高濃度的氣體。
  14. A solvent for the material to be deposited is needed in lpe.

    在LPE法中，需要有待淀積材料的溶劑。
  15. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics

    用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。
  16. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  17. < uk > al and its alloys adhere well to thermally grown and to deposited silicate glasses. < / uk >

    < uk >鋁和它的合金能很好地粘附在熱生長的和淀積的硅酸鹽玻璃上。 < / uk >
  18. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  19. So we applied low temperature techniques to manufacture the sense film of qcm sensors. at low temperature and low pressure, with n - butylamine as the carbon source material, and with dry hydrogen as the carrying gas, we applied r. f. glow discharge plasma to preparation the working film for the qcm sensors

    在「實驗與分析」一章中較為詳細地闡述了採用等離子體化學氣相淀積的方法，以正丁胺作為碳源物質，通過射頻輝光放電在低溫低壓條件下制得了正丁胺等離子體淀積膜。
  20. The model should be coupled with other model such as random rainfall model, evapotraspiration model etc, and avoid subject factor effect. the aim is to evince accurately general law of caco3 deposition, provide scientific basis for making strategic decisions on soil management and environment protection

    同時，所建模型有待于結合影響caco _ 3淀積綜合因素的其他因素模型如隨機降水模型、蒸散模型等（ marion等， 1985 ）建立耦合系統模型並加以改進完善，避免主觀因素影響，使其能準確地反映caco _ 3淀積的一般規律，指導土壤管理和環境保護。
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