深寬比 的英文怎麼說

中文拼音 [shēnkuān]
深寬比 英文
depth to width ratio
  • : Ⅰ形容詞1 (從上到下或從外到里的距離大) deep 2 (深奧) difficult; profound 3 (深刻; 深入) thor...
  • : Ⅰ動詞1 (比較; 較量高下、 長短、距離、好壞等) compare; compete; contrast; match; emulate 2 (比...
  1. And then, metal structure with aspect ratio 30 was obtained in our laboratory. eventually, a few micro parts with high aspect ratio were fabricated by liga process under the optimum condition. there were key parts of micro thruster, netlike nickel antielectron modulator, micro copper radiator, stainless steel micro components and many filter mediums with different shapes and dimensions

    最後,我們利用liga技術加工的獨特優點,以發展其高深寬比技術的實際應用,先後製作了狹縫陣列鎳結構微推進器關鍵部件、薄壁網狀多孔鎳結構正電子慢化體、微型銅結構換熱氣和多種材料不同、尺寸各異的過濾介質,還結合利用liga技術和微細電火花技術的加工優點,製作出了不銹鋼微結構
  2. Plasma cyro - etching of high aspect ratio silicon crystal structures

    等離子體低溫刻蝕單晶硅高深寬比結構
  3. Analog test study of nozzle width and split type ' s influence on pneumatic efflux element switching performance

    深寬比及劈高對氣動射流元件射流切換影響模擬試驗研究
  4. The laser - liga technology provided by this research is the first technology to use ultraviolet laser as the exposal source for su - 8 photoresist lithography. it is a technology with lower cost and big potential to increase the aspect ratio as well as wider application

    本文首次提出採用紫外激光作為曝光光源的laser - liga技術,對su - 8膠進行曝光光刻不僅成本低、易推廣,而且具有大幅度提高光刻深寬比的潛力。
  5. With the development of memss, their structures are more and more complex, and new harmss need to be designed and fabricated. so, it is very necessary to simulate the imaging process of thick resist photolithograph

    隨著mems的迅速發展,其結構愈來愈復雜,高深寬比的新型mems結構需要被設計和加工,迫切需要對厚膠光刻過程的模擬。
  6. The notable torsion effects of the surface ground motion above the alluvial valley are illustrated and the torsion effects become stronger as the frequency of the incidence is higher. ( 4 ) antiplane surface motion of the underground circular soft inclusion and the underground homogeneous soft interlayer is investigated in this paper. the results indicate : surface displacement amplitudes just above the soft inclusion of small depth - to - width ratio is amplified and soft interlayer of small depth - to - thickness ratio is amplified to a certain degree, and moreover, the latter is lower limit of the former

    結果表明:垂直入射時,小深寬比軟夾塞上方地表位移幅值有較大的放大,小軟夾層的地表位移幅值也有一定的放大,且後者為前者的下限;波接近掠入射時,軟夾塞正上方地表點和軟夾層的中國地震局工程力學研究所碩士學位論文一地表位移幅值都沒有放大,而軟夾塞迎波面一側地表點的位移幅值會有一定的放大;軟夾塞上方的地表位移運動有較強烈的扭轉效應,且此扭轉效應隨入射波頻率的增高而增強。
  7. After that, antiplane surface motion features of the shallow alluvial valley of small depth - to - width ratio are investigated in details. the results indicate that surface displacement amplitudes of alluvial valley will not reduce when the alluvial valley become shallow. the maximum amplitudes will move to high frequency with depth - to - width ratio becoming small

    在此基礎上,對小深寬比的淺圓弧型沉積盆地出平面地表運動特徵做了較入的研究,結果表明盆地地表位移幅值不會因變淺而減小,最大反應會隨著盆地深寬比的減小而向高頻移動。
  8. Fabrication process of the microgripper based on silicon bulk micromachining is designed. effects of footing and lag in icp and bonding failure are discussed as emphases. the cantilever type gripping finger that is 6 m wide and 5471 m in equivalent length was released successfully characteristic of comb - drive electrostatically actuated microgripper is tested

    進行了大量的工藝試驗和分析,特別對大深寬比的超長長度懸臂梁型夾持臂及梳狀驅動結構進行了入研究,解決了微細加工工藝中的關鍵技術。
  9. In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology

    為使二維振動傳感器在兩主軸方向的靈敏度大致相同,敏感元件採用高度對稱的四梁結構,其中每個軸向上均採用帶折疊梁的雙側叉指電容結構,採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件,具有高靈敏度、量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算,並利用有限元法進行了模擬分析,根據模擬結果得出了優化參數;在確定敏感結構的基礎上,研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析,利用差動測量技術得到由振動引起的微小電容變化量,經c - v介面電路進行相位調制處理,然後通過解調輸出與加速度成正的電壓信號。
  10. The finest linewidth is 0. 28 ? m and the highest aspect ratio reaches 6. 7

    我們所達到的最小線為0 . 28微米,最高之深寬比可達6 . 7 。
  11. Mems technology is a hot topic of science and industry in the 21st century, and micro - fabrication technologies are the key to the mems development. in the mems field, microstructure with high height and high aspect ratio is often used. liga ( x - ray lithography 、 electroforming 、 micro - replication ) technology are the very way to fabricate this microstructures

    在mems領域中,常需要用到具有一定厚度和深寬比的微結構, liga ( x射線層光刻、電鑄成型和微復制)技術是製作這種微結構的重要手段,因此成為mems微細加工中十分重要的技術。
  12. Fabrication of ultra deep electrical isolation trenches with high aspect ratio using drie and dielectric refill

    反應離子刻蝕和介質填充技術製造具有高深寬比的超電隔離槽
  13. This work analyses the means of micro - fabrication and the facts that effecting the result of micro - fabrication nowadays, gives out a solution to reduce the gradient and improve the depth of the micro - hole

    本文通過分析影響微孔加工質量的因素,提出減小微孔錐度和增加微孔深寬比的掩模旋轉鉆孔加工方法。
  14. Abstract : based on analyzing the mechanism of fraction for anti - extraction soil by using the results of in - side model test about wind - borned sand deposit foundation, three stressing process of the ultimate bearing capacity in soil is given, and the basic formual for anti - extraction capacily calculation is established. compared with other methods at present, the accuracy of the calculation result is several times over that of others. because the scope of application isn ' t limited by width - to - depth ratio, it is very convenient for widely application

    文摘:利用風積砂地基抗拔室內模型試驗資料,通過對抗拔土體破壞機理的全面分析,提出了土體形成極限承載力的三個受力過程,建立了擴展基礎抗拔承載力計算的基本公式,與目前其它計算方法較,成果精度提高很多倍,而且適用范圍不受深寬比限制,便於推廣應用。
  15. In this thesis, to increase the aspect ratio of liga process, several important influence factors were discussed, which includes the structure and performance of liga mask, x - ray intensity and x - ray spectrum of beam lines, the characteristic of pmma resin and the micro electroforming parameters. the au - pi mask and the au - si mask were designed by xop and origin software, after the difference between the spectrum of 3w1 and 3b1 beam line had been contrastively analyzed

    本文著眼于liga技術高深寬比方面的研究,以提高本實驗室用liga技術製作微細結構的深寬比為目的,從分析各因素影響深寬比的機理出發,再加以理論設計和實驗工藝的優化和改善,分別研究討論了影響深寬比的幾大重要因素:掩模結構和性能、光源光譜和光強、 pmma光刻膠性能、電鑄工藝參數等。
  16. Then some methods including optimizing the spectrum and intensity of 3w1 beam line and improving the performance of pmma were put in force, and pmma structure with aspect ratio 100 was obtained under these optimum conditions. moreover, such steps as controlling ph, electrodepositing, using activator and a second cathode, and mending the power supply were taken to solve a series of problems coming into being during electroforming process correspondingly, for example, air holes, inner stress, and ununiformity of deposition

    並針對3w1光源中硬x光成分較多、光強和功率密度太高的特點,提出了用ni吸收膜改善光譜和用x光暫波器法優化光強的方法,同時嚴格控制和改善pmma光刻膠的性能,經過反復的計算分析和實驗改進后,獲得了深寬比高達100的膠結構圖形。
  17. The results of studying indicate : the solutions are convergent even for the alluvial valley of small depth - to - width ratio and it has high precision

    驗證結果表明,解答在小深寬比盆地情況下是收斂的,而且收斂的數值結果具有足夠的精度。
  18. Electro - conductive fingers of gripper are connected to ground, in order to release the electric charges on the surface of fingers and gripping objects. continuous s - shaped flexures in finger would decrease the stiffness of gripping arm, and slove the contradiction between huge elastic modulus and small surface electrostatic force

    本文設計了大深寬比梳狀靜電驅動形式的微夾持器,採用了導電型並接地連接的微夾持臂,對被操作對象無特殊要求,且可防止靜電對操作的影響。
  19. Analyse to the experimental data shows that there is still much potential to increase the aspect ratio

    對實驗結果的分析表明,進一步提高光刻深寬比的空間很大。
  20. Finally, microstructures of su - 8 photoresist with difference thickness are manufactured according to previous experimental results. the sem pictures show that the graphics feature good qualities and vertical sidewalls, the thickness of su - 8 photoresist is up to 250 microns and the aspect ratio can reach 10

    最後依據前面得到的實驗規律,製作了幾種不同厚度的su - 8膠微結構, sem照片顯示圖形質量較好,側壁垂直,圖形最大高度可達250微米,深寬比可達10 。
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