深能級 的英文怎麼說

中文拼音 [shēnnéngjí]
深能級 英文
deep level
  • 深 : Ⅰ形容詞1 （從上到下或從外到里的距離大） deep 2 （深奧） difficult; profound 3 （深刻; 深入） thor...
  • 能 : 能名詞（姓氏） a surname
  • 級 : Ⅰ名詞1 （等級） level; rank; grade 2 （年級） any of the yearly divisions of a school course; gra...
  1. Have project of project of a batch of deep know well to manage theory and practice experience the tall intelligence of code of hep policy is compound model talent ; register cost division, build engineer of manage of division, inspect, investment to seek advice from the of all kinds major such as division of rate of engineer, estate hold 80 % what job seniority personnel occupies faculty, among them 6 people provide advanced title ; at the same time the company still retained personnel of senior and a batch of famous experts, professor, advanced professional technology, lawyer, and the elite of familiar international convention, perfectness foreign language and it, the advisory expert warehouse that makes system of company much territory, much discipline, much class, network, become " your kind effort " internally the development, brain trust that serves external

    擁有一批深諳工程項目管理理論與實踐經驗並熟知政策法規的高智能復合型人材；注冊造價師、建造師、監理工程師、投資咨詢工程師、房地產估價師等各類專業執業資格人員佔全體員工的80 % ，其中6人具高級職稱；同時公司還聘請了一批知名專家、教授、資深高級專業技術人員、律師，以及熟悉國際慣例、精通外語和信息技術的精英，構成公司多領域、多學科、多門類、網路體系的顧問專家庫，成為「鼎力」對內發展、對外服務的智囊團。
  2. Non - stoichiometry related deep level defects in semi - insulating inp

    半絕緣磷化銦中與非化學配比有關的深能級缺陷
  3. Experimental results are reported on temporal instability of phase - conjugate beam in a self - pumped ce : batio3 phase conjugator at 532nm. dark decay behaviors of sppc gratings in ce : batio3 are studied, for the first time to our knowledge, by measuring the decay of sppc reflectivities at 532nm and 790nm wavelengths at room temperature

    首次在實驗和理論上研究了自泵浦位相共軛光柵暗衰減的特性，與以往一深一淺兩個陷阱能級參與光折變過程不同的是，發現了兩個深陷阱能級同時參與了自泵浦位相共軛光柵的建立。
  4. Some results are interesting, for example, in our calculation, there are no reconstruction in the cleaned pbte > pbse > pbs ( 001 ) surface. but there are different rumple occurs. unlike the iii - v and ii - vi semiconductors, there are no surface states in the fundamental gaps

    在表面電子結構特徵方面，與111一v族和n一vl族化合物不同，基本帶隙中不引入表面態，而在導帶頂和價帶底附近以及更深能級中出現表面態或表面共振態等。
  5. Based on the energy band characteristics of ordinary negative electron affinity emitter gaas, the design of lengthening the diffusion lengths of negative electron affinity emitter gaas was presented, and the special negative electron affinity emitter gaas was designed

    摘要根據通常負電子親和勢二次電子發射材料砷化鎵的能級特點，提出延長負電子親和勢二次電子發射材料砷化鎵的逸出深度的理論設計，設計出了特殊的負電子親和勢二次電子發射材料砷化鎵。
  6. 3. through analyzing the erosion energy characteristic of different rainfall capacity, rainfall duration, and runoff depth classes, we draw that rainfall kinetic energy and runoff energy presented positive correlation with the rainfall duration. and presenting the fluctuation change with extension that rainfall duration ; runoff energy increase with increase of runoff depth

    （ 3 ）通過分析不同降雨量、降雨歷時、徑流深量級中侵蝕能量特徵，得出降雨動能和徑流能量都與降雨量基本呈正相關；隨降雨歷時的延長呈波動性變化；徑流能量隨徑流深的增加而增加。
  7. Deep acceptor level

    深受主能級
  8. The effective excite wavelength range is 350 - 355nm for the exciton - exciton collision peak and we observed a blue emission peak at about 472nm caused by zinc vacancy. 3

    對激子-激子碰撞峰來說，有效的激發波長在350 - 355nm處，同時在472nm左右存在有一個由鋅空位造成的深能級的藍光發射峰。
  9. The atomic coherences in four and three level systems are discussed in this thesis : 1 ) atomic coherence effects in four - level n - type atomic system are discussed

    為此，我們對此做了一系列深入研究，本文的主體內容有二：第一，研究了n型四能級原子系統中的原子相干效應。
  10. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  11. Sppc grating at 790nm mainly attributes to the charge grating in ce - ion deep trap while the fe - ion deep trap contributes more at 532nm wavelength than that at 790nm

    利用該模型分析認為： 790nm激光泵浦時位相共軛光柵主要依賴ce離子深能級，而532nm激光泵浦時fe離子深能級的貢獻比在790nm時大。
  12. Test method for deep level el2 concentration of undoped semi - insulating monocrystal gallium arsenide by measurement infrared absorption method

    非摻雜半絕緣砷化鎵單晶深能級el2濃度紅外吸收測試方法
  13. Test method for characterizing semiconductor deep levels by transient capacitance techniques

    半導體中深能級的瞬態電容.測試方法
  14. Influence of deep level defects on electrical properties and defect control in semi - insulating inp

    中深能級缺陷對電學性質的影響和缺陷的控制
  15. Deep level defects is one of factors responses for the distribution of mesfet threshold voltage

    我們認為這一現象與si gaas襯底深能級缺陷有關。
  16. Spb - fwm forms the charge grating in fe - ion deep trap, while tir - fwm builds up the charge grating in the ce - ion deep trap

    Spb - fwm形成了fe離子深能級上的載流子光柵，而tir - fwm形成了ce離子深能級的載流子光柵。
  17. Substrate slices of uniform electrical properties are necessary for integrated circuit device fabrication. at present there are variations in electrical properties across substrate slices. these are associate with deep levels, in particular el2, which is generally attributed to antisite defect complexes and considered to be related to grown - in dislocations formed by thermal stresses

    研究證明， si - gaas襯底電學特性的不均勻與材料中深能級微缺陷，特別是el _ 2 （深能級施主，被認為是as的反位缺陷的復合體）有極大的關系，而這些深能級微缺陷又與熱應力形成的長入位錯有密切聯系。
  18. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。
  19. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
  20. They can dynamically change the distribution of electric field, carriers and current densities in pcss, caused output current to delay and also strengthen the local electric field enough to satisfy qualification of domain, and then cause avalanche. the time of delay is determined by the time of attaining the qualification of domain

    非線性光電導開關的時間延遲效應則是由於半絕緣gaas材料中的el2深能級中心動態地改變開關中的電場、載流子濃度引起的；延遲時間的長短主要由滿足成疇所需條件的時間決定。
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