測晶軸學 的英文怎麼說

中文拼音 [cèjīngzhóuxué]
測晶軸學 英文
axonometry
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 軸 : 軸Ⅰ名詞1. （圓柱形的零件） axle; shaft 2. （對稱部分的直線） axis 3. （圓柱形的纏繞器物） roller; spool Ⅱ量詞（用於纏在軸上的線以及裝裱帶軸子的字畫）
  • 學 : Ⅰ動詞1 （學習） study; learn 2 （模仿） imitate; mimic Ⅱ名詞1 （學問） learning; knowledge 2 （學...
  1. All my samples with good orientation are prepared by rf sputtering. then we invest surface morphology and crystal structure, optical and electrical properties of zno films by afm, xrd, hall testing, ultraviolet - visible spectrum photometer and xps et al. zno films are fabricated on gaas substrate

    本文用射頻反應磁控濺射制備了高度c軸擇優取向的zno薄膜，採用原子力顯微鏡（ afm ） 、 x射線（ xrd ） 、 hall測試儀、紫外?可見分光光度計和x光電子能譜等分析測試手段，研究了樣品的表面形貌、晶體結構、光學和電學性能等。
  2. The refractive indices at 12 wave lengths in the visible region were measured with the minimum deviation method, showing that kabo is a negative uniaxial optical crystal with moderate birefringence. the measurement of nonlinear optical coefficient dn = 0. 45pm / v

    用最小偏離法測試了可見光區十二個波段處的晶體折射率，結果表明kabo晶體屬負單軸晶，具有適中的雙折射率。晶體的非線性光學性質測試顯示，該晶體非線性光學系數為d _ （ 11 ） = 0 . 45pm / v ，可實現相位匹配。
  3. Prepared technical parameters were optimized by l9 ( 34 ) experiment analysis. a unique method for cleaning and drying of substrate - cleaning used by scour, drying used by infrared light was fished out by large numbers of experiment. chemical mechnism of zno thin film prepared by sol - gel technique was discussed by dta for the first time. by the measurements of sem, xrd and uvs, the thin film was analysed. the result proved that the thin film with strongly preferred orientation of c - axis perpendicular to the substrate surface which surface was homogenous, dense and crackfree was the crystalline phase of hexagonal wurtzite. the thin film was composed of plentiful asteroidal crystal which crystal dimension approximately 10 30nm. the average transmittance of thin film in visible region was above 90 %. the results of measurements else also proved that the thickness of single dip - coating was 75 240nm, this films resistivity was found to be 3. 105 102 3. 96 105 ? cm. the thickness and resistivity of thin film influenced by dope - content, withdrawal speed, pre - heat - treatment, anealing were reseached respectively

    利用xrd 、 sem以及uvs光譜儀等分析方法對薄膜進行了研究，結果顯示，所制備的薄膜為六方纖鋅礦型結構，具有高c軸擇優取向性；表面均勻、緻密，薄膜材料由許多星狀晶粒組成，晶粒尺寸大約為10 - 30nm左右；薄膜可見光透過率平均可達90 % ；對薄膜厚度以及電學性能進行了測定后發現：單次鍍膜厚度約為75 - 240nm ， al ~ （ 3 + ）離子摻雜型氧化鋅薄膜的電阻率在3 . 015 102 - 3 . 96 103 ? cm范圍內；分別研究了摻雜濃度、提拉速度、預燒溫度、退火溫度等工藝參數對薄膜厚度和電阻率的影響。
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