游離基機理 的英文怎麼說
中文拼音 [yóulíjījīlǐ]
游離基機理
英文
radical mechanism- 游 : Ⅰ動詞1 （人或動物在水裡行動） swim 2 （各處從容地行走; 閑逛） rove around; wander; travel; tour 3...
- 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
- 機 : machineengine
- 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
- 游離 : 1. （離開集體或附屬的事物而存在） dissociate; drift away 2. [化學] free
- 機理 : mechanisation; mechanization; mechanism
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Abstract : plant responses to salt stress via a complex mechanism, including sensing and transducing the stress signal, activating the transcription factors and the corresponding metabolizing genes. since the whole mechanism is still unclear, this review emphasize the biochemical events during the plant adaptation to salt stress referring to an index of importance : the homeostasis in cytoplasm, the biosynthesis of osmolytes and the transport of water. most of these biochemical events were elucidated by study of halophyte and salt - sensitive mutations, also many important genes involved were cloned and used to generate stress - tolerance phenotypes in transgenic plants. on the other hand, about the molecular mechanism in signal transduction, the research of arabidopsis mutations and yeast functional complementation provided helpful traces but not full pathway
摘要植物對鹽脅迫的耐受反應是個復雜的過程，在分子水平上它包括對外界鹽信號的感應和傳遞，特異轉錄因子的激活和下游控制生理生化應答的效應基因的表達.在生化應答中，本文著重討論負責維持和重建離子平衡的膜轉運蛋白、滲調劑的生物合成和功能及水分控制.這些生理生化應答最終使得液泡中離子濃度升高和滲調劑在胞質中積累.近年來，通過對各種鹽生植物或鹽敏感突變株的研究，闡明了許多鹽應答的離子轉運途徑、水通道和物種特異的滲調劑代謝途徑，克隆了其相關基因並能在轉基因淡水植物中產生耐鹽表型;另一方面，在擬南芥突變體及利用酵母鹽敏感突變株功能互補篩選得到一些編碼信號傳遞蛋白的基因，這些都有助於闡明植物鹽脅迫應答的分子機制。The gas sources that we used are trimethylgallium ( tmg ) and 99. 9999 % purity nitrogen, which were fed into reaction chamber and resonance cavity respectively. the highly dense ecr plasma up to 1011cm - 3 was created in the resonance cavity and introduced to the next reaction chamber by the force of divergent magnetic field. consequently, gan thin film was grew on the substrate sapphire ( 0001 ) placed in the downstream
實驗採用有機金屬三甲基鎵氣源（ tmg ）和99 . 9999純度的氮氣，在ecr - pecvd150裝置共振腔內電子迴旋共振吸收微波能量產生的高密度ecr等離子體在磁場梯度和等離子體密度梯度的作用下向下級反應室擴散，在放置於下游區樣品臺上的- al _ 2o _ 3襯底表面附近發生物理化學反應沉積成gan薄膜。An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding
根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
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