源氣體 的英文怎麼說
中文拼音 [yuánqìtǐ]
源氣體
英文
source gases-
The best optimum mathematical model is constituted. scalar factor of structural parameter on loop rectangular negative pressure and adsorption slide is calculated. structural parameter, air gas source pressure carrying capacity and thickness of air cell are made sure by hydrodynamics and the theory of gas lubrication
詳細論述了導軌副的設計過程，運用數學上的拉格朗日條件極值求解法，建立最優化數學模型，求出環矩形負壓吸附導軌的結構參數的比例情況，並運用流體力學和氣體潤滑理論確定了環矩形負壓吸附導軌的結構參數、氣源氣壓、承載能力和氣膜厚度的確定性結論。Analyses the source of non - condensable gas and its bad impact on lithium bromide absorption chillers. presents the management methods of air tightness and vacuum degree
摘要分析了機組不凝性氣體的來源，並闡述其對機組的不利影響。介紹了機組氣密性管理和真空度管理的方法。It is also faster than economic growth, implying that the world is not just consuming more energy, but also making it ever more dirtily
溫室氣體排放量的增長也快于經濟增長，這意味著人類不僅消耗了更多的能源，而且還把地球搞得烏煙瘴氣。Managed gra lands : a greenhouse gas sink or source
管理的草原：溫室氣體匯（下沉）還是源？Managed grasslands : a greenhouse gas sink or source
管理的草原：溫室氣體匯（下沉）還是源？Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。While polishing the products outer cover, please do not insert the power. also, do not use harsh chemicals or strong cleaning solvents to clean the monitor screen
在擦拭產品外殼時，請勿插上電源，不可用液體或液化氣體清潔液清潔，必須以乾凈的淡色抹布小心擦拭外部。The three main steps included in the active olfaction, i. e., plume finding, plume tracking and odor / gas source declaration, and the associated strategies applied to each step are summarized
總結了主動嗅覺所包含的三個步驟，即氣味氣體煙羽的發現、跟蹤和氣味氣體源確認，及每一步所採取的主要策略。Photometry ; terms of measurement on gas luminaires
光測量.氣體光源的測量術語A th - 1025 thoron source made in pylon company of canada was adopted. thoron gas is mixed with circulation gas before they are input into the thoron accumulation box. the thoron level in the thoron accumulation box can be adjusted by changing the gas flow rate through the thoron source, or adding different volume of delay boxes in source input circuit, and me
簡易（氣土）室採用加拿大pylon公司生產的th - 1025型流氣式固體（氣土）源， （氣土）進入積累箱之前先與循環氣流混合，積累箱中的（氣土）濃度可以通過改變流經（氣土）源的氣流流率或在充源迴路加不同體積的延遲瓶加以調節。These specialized kits have made it possibile to investigate how hydraulics and pneumatics can be used in conjunction with assemblies such as water mills pistons and generators to produce energy or transform it from one form to another
這些工具箱是專門用來研究水力學和氣體學是如何結合而相互作用，例如利用水車、活塞、發電機的運用來產生能源，或將能量由單一形式轉換成另一模式。Echoing the theme of the campaign, the media programme comprises radio commercials, public transportation ads and newspaper advertorials, featuring messages on electrical safety, gas safety, lift and escalator safety, and energy efficiency
宣傳內容配合機電安全香港通2005運動的主題，著重帶出電氣安全、氣體安全、升降機及電梯安全及能源效益的訊息。The first liquid oxygen and liquid nitrogen equipments of xichang and jiuquan satellite lauching base run normally until now, which has made important contribution for our coutry ' s aviation and spaceligh enterprise, thus attained national defense sicience and industry committ ' s appreciation
提供大連日酸氣體公司的氮液化設備，開創了日酸公司首用國產成套設備的先河；哈爾濱黎明氣體公司和成都僑源氣體公司則是我公司大型液氧液氮設備的重點用戶，由於過硬的技術和穩定的質量，短短二、三年時間內，這些用戶相繼增購了多套同類產品。The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of
對于碳化工藝，側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響，研究結果表明:隨著碳化時間的增長，碳化層的晶粒尺寸隨之變大，表面粗糙度隨之降低，但當碳化到一定時間之後，碳化反應減緩，碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大，適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時，碳化層的晶粒尺寸隨氣體流量的變化不明顯，但當氣體流量增大到一定程度時，碳化層的晶粒尺寸隨氣體流量的增大而明顯變大，同時，適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時，碳化層的晶粒取向不明顯，隨著碳化溫度的升高，碳化層的晶粒尺寸明顯變大，且有微弱的單晶取向出現，但取向較差，同時，適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ，以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si （ 100 ） ，選用si （ 111 ）作為基片生長的碳化層的晶粒取向一致性明顯更好。By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed
由於微波功率的改變會導致等離子體中電子溫度和等離子體密度發生變化，從而造成不同的源氣體分解過程，結果微波功率的升高導致了薄膜沉積速率的提高、 f / c比的降低，同時也導致薄膜中cf和cf _ 3基團密度的降低，而保持cf _ 2基團密度接近常數。In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。The main simulation results were as follow : the average energy of electron decreases with the increasing pressure ; it decreases with the increasing methane concentration in the filling gas in the lower pressure range and increases in the higher pressure range ; the number density of fragment h and ch3 does not always increases with the gas pressure, but reaches an individual maximum ; energy carried by neutral dissociative fragment ch3 decreases with increasing gas pressure and ch4 concentration
主要結果如下：平均電子能量隨著反應室內氣壓的增加呈下降趨勢；在較低氣壓范圍內平均電子能量隨著反應源氣體中甲烷濃度的增加而減少；在較高氣壓范圍內平均電子能量則隨著甲烷濃度的增加而增加；隨著氣壓的增加碎片h和ch _ 3的數目並不是一直增加的，而是在不同的特定氣壓下出現各自的最值；碎片攜帶的能量基本隨甲烷濃度和氣壓的增加而減小。In this paper, the gas phase dissociation process during the diamond film growth from electron - assisted chemical vapor deposition ( eacvd ) by considering ch4 / h2 mixture gas as source gas had been studied by using monte - carlo computer simulation method. the eacvd gas phase dynamics model was built firstly and the low temperature deposition process was also discussed
本工作採用蒙特卡羅（ monte - carlo ）計算機模擬的方法，對以ch _ 4 h _ 2為源氣體的電子助進化學氣相沉積（ eacvd ）金剛石薄膜中的氣相分解過程進行了研究，初步建立了eacvd氣相動力學模型，並討論了eacvd中的低溫沉積過程。In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma
重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。A common distribution core that providesall electrical power, gases, chemicals, and other services to the sectors of an automated wafer processing system
一種公共分配中心，向自動化晶片處理系統中的各個部分提供所有的電源、氣體、化學原料和其它服務。分享友人