溝道熱電子 的英文怎麼說

中文拼音 [gōudàodiànzi]
溝道熱電子 英文
channel hot electrons
  • : 名詞1 (挖掘的水道或工事) channel; ditch; gutter; trench 2 (淺槽;似溝的窪處) groove; rut; furr...
  • : Ⅰ名詞(道路) road; way; route; path 2 (水流通過的途徑) channel; course 3 (方向; 方法; 道理) ...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • 電子 : [物理學] [電學] electron
  1. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值壓升高,亞閾斜率退化,漏極驅動能力減弱,器件短效應的抑制更為有效,抗載流性能的提高較大,且器件的漏極驅動能力的退化要比改變結深小.因此,改變槽深加大負結深更有利於器件性能的提高
  2. Hot electron tunneling mechanism of current collapse in gan hfet

    溝道熱電子隧穿流崩塌模型
  3. Bearings roller bearings and other components. bearing ring precision rolling production line ; a high - precision, super efficient grinding automatic production line ; bearing assembly line ; signal processing equipment ; blank processing equipment ; crowning roller grinder ; end - grinder ; coordinate precision grinder ;, cylindrical grinder ; surface grinder ; spherical roller processing equipment ; raceway grinder ; heat treatment ; needle processing equipment ; polishing processing equipment ; roller - seiki ; rolling auto - sorting machine parts bearing hardness sorting machine bearing cleaning equipment ; contact angle measuring instrument ; contour meter ; bearing life experimental device ; bearing packaging equipment ; roundness instrument ; dynamic vibration noise analyzer ; noise vibration test equipment ; printing machine measuring instrument ; roughness tester ; scanning electron microscope ; finish detector ; inverter ; spindle, wheel, whetstone and other grinding materials

    軸承套圈精密輾擴生產線高精高效磨超自動生產線軸承自動裝配線球加工設備毛坯加工設備凸度滾磨床雙端面磨床高精度坐標磨床內外圓磨床平面磨床球面滾加工設備磨床處理生產滾針加工設備光飾加工設備滾超精機滾動體自動分選機軸承零件硬度選別機軸承清洗設備角接觸測量儀輪廓測量儀軸承壽命實驗裝置軸承包裝設備圓度儀振動噪音動態分析儀振動噪音測試裝置印字機加工測量儀粗糙度測試儀掃描顯微鏡光潔度檢測儀變頻器主軸砂輪油石和其他研磨材料
  4. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導,研究了由束照射產生的有源( f _ 2和f _ 3 ~ +色心)的室溫寬帶光致發光特性。
  5. In order to investigate the effect of high - field hot - carrier on devices and circuits, the electrical stress experiment is carried out with 1. 2 n m, 1. 0 n m and 0. 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology. by using the fresh and degraded experiment data, bsim2 model parameters are extracted

    為了分析研究高場載流效應對器件和路特性可靠性的影響,採用自動測試與cad技術相結合的監測系統,對國內長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了應力退化實驗,並根據實驗結果提取了退化前後器件的bsim2模型參數。
  6. This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on

    通過與體硅bjmosfet比較,討論和分析了soibjmosfet的優點:無閂鎖效應、抗軟失效能力強、寄生容大大降低、載流效應減弱、減弱了短效應、工藝簡單等。
  7. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件載流退化所引入的界面態,根據其沿非均勻分佈的模型,採用準二維分析方法對退化后器件的漏源流、閾值壓和飽和區場作了詳細的理論推導,並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
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