溫度弛豫 的英文怎麼說

中文拼音 [wēndùchíyù]
溫度弛豫 英文
temperature relaxation
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 弛 : 動詞1. [書面語] （松開; 鬆懈） relax; loosen; slacken 2. （解除; 免除） fall off; fall out of use
  • 豫 : Ⅰ形容詞[書面語]1 （歡喜; 快樂） pleased 2 （安適） comfort Ⅱ名詞1 （河南的別稱） another name for...
  • 溫度 : [物理學] temperature
  1. By means of the calorimetric experimental results and the temperature dependence of heat capacity differences, four kinds of temperature dependences of configurational entropy, dielectric relaxation index and cooperatively rearranging region are studied, on the basis of configurational entropy theory on cooperatively rearranging region in disordered amorphous materials by the methods of the relationship between configurational entropy and heat capacity difference, and the equation of relaxation time with activated energy barriers

    摘要基於無序非晶材料「關聯重排區域」的構型熵理論，運用構型熵與熱容量差的關系式、弛豫時間與活化勢壘的基本公式，及聚合物量熱學的實驗結果和熱容量差與溫度的基本關系，研究了4種情況下構型熵、介電弛豫指數和關聯重排區域大小的溫度變化關系。
  2. This viewpoint is concided with the 2pr of sr2bi4ti5o18 ferroelectrics doped by la. the curie temperatures of sblt and blt - sblt decrease with the increase of la content. for sblt, when la content excesses 0. 75, the samples exhibit typical characteristics of relaxor type ferroelectrics. blt - sblt with 1. 50 la exhibits characteristics of relaxor type ferroelectrics as well

    Sbti和bit - sbti經a位摻雜后，居里溫度（ t _ c ）都隨摻雜量的增加而降低，在摻雜量分別為0 . 75以上和1 . 50時，二者都出現了弛豫鐵電體的典型特徵。
  3. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  4. The second aspect : from qgp kinetic equations with collision integrals, by using the relaxation time approximation, we calculate the distribution functions to the second order correction. we obtain the distribution functions for quarks ( and anti - quarks ) and gluons under perturbation of the fluctuation of the color field. then in the high - temperature - low - density area, we discuss the characteristics of the distribution functions, and use t hem to get the net baryon density and the energy density

    第二，從有碰撞項的qgp動力論方程出發，忽略自旋，在色漲落擾動下，利用弛豫時間近似，得到夸克和膠子分佈函數的二級修正，通過數值分析重點討論了高溫低密情況下qgp中成分粒子分佈函數的特性，並且由分佈函數得到凈重子數密度和能量密度。
  5. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。
  6. Secondary relaxation temperature

    次級弛豫溫度
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