漂移功率 的英文怎麼說

中文拼音 [biāoyígōnglǜ]
漂移功率 英文
drift power
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 功 : 名詞1 （功勞） exploit; merit; meritorious service [deed]: 戰功 military exploits; 立功 render me...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  2. 8b / 10b encoding adapt the characteristic of fiber channel very well, it has been used in high - speed fiber transmission broadly. it avoids the appearance of continuous “ 1 ”, “ 0 ”, offers plenty of bit synchronization time information, enhances the stability of output light signal, reduces interference between signals and offers proper redundancy to check error through transmission

    它避免了連「 1 」 、連「 0 」碼的出現，提供了豐富的位同步定時信息，減少了直流基線漂移，提高了光輸出功率的穩定性，減少了高低頻分量，改善了信號間的串擾，提供了適當的冗餘，便於檢測系統傳輸中帶來的錯誤。
  3. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  4. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  5. This paper introduces a power controlling system for electrosurgical generator based on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  6. This paper introduces a power controlling system for electrosurgical generator baaed on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    摘要介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  7. Algan / gan hemt has high breakdown electric field, fast electron drift velocity and large electron concentration, so it has been used more and more in high frequency and large power fields

    Algan / ganhemt由於具有擊穿電壓高、電子漂移速度快和電子濃度大等特點，已被越來越多地應用於高頻及大功率領域。
  8. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  9. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  10. Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the

    另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。
  11. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  12. Tn order to eliminatc the error caused hylight power drift of incident light, we adopt the method of the ration of scattering light to measure the concentration of protein in milk. that is to measure 90 " scattering light intensity and 0 " transmitting light intensity in the light incident plane. the ratio of them is to be used to express measured optical parameter

    由於牛乳蛋白質的測量精度要求很高，為了消除因入射光的光功率漂移而引起的誤差，我們採用散透比法來測量牛乳蛋白質的含量，即在光的入射平面內同時90處的散射光光強is和測量0處的透射光光強it ，用它們的比值來表徵測試牛乳蛋白質含量的光學參量。
  13. We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

    本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。
  14. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
  15. Agrawal ' s theory model of soa ca n ' t simulate accurately the amplified signal pulse shape in soa when the pulse width is as short as several picosecond. so we simulate accurately the peak power, full width half maximum, rising time and falling time of amplified pulse after considering the gain compression, gain asymmetry, gain shift, gain variable with situation and time. with ultrahigh velocity dense wavelength division multiplexing ( dwdm ) and optical time division multiplexing ( otdm ) developing, we demand more and more short signal pulse and more signal channels

    但當信號脈沖的寬度只有幾個皮秒時， soa傳統的agrawal理論模型已經不能完全準確地模擬soa對信號脈沖的放大情況，在此基礎上，我們在全面考慮soa的增益壓縮、增益非對稱和漂移、增益隨位置和時間變化的載流子壽命等物理機制的情況下，對皮秒超短高斯信號光脈沖經soa放大后的脈沖的峰值功率、脈沖半值全寬度、脈沖的上升時間和下降時間等重要物理參量進行了準確模擬和詳細研究。
分享友人
分享到 Line

分享到臉書