漂行深度 的英文怎麼說

中文拼音 [biāohángshēndù]
漂行深度 英文
floating depth
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 行 : 行Ⅰ名詞1 （行列） line; row 2 （排行） seniority among brothers and sisters:你行幾? 我行三。where...
  • 深 : Ⅰ形容詞1 （從上到下或從外到里的距離大） deep 2 （深奧） difficult; profound 3 （深刻; 深入） thor...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 深度 : 1. （深淺程度） degree of depth; depth 2. （觸及事物本質的程度） profundity; depth
  1. Zhoushan is sea area which fertility is tiptop in our country. sea surface wind is important factor of influencing contrail of excursion oil and culturist so investigating sea surface wind of zhoushan and setting up numerical forecast model which fits this sea area can offer tool for study sea wind in this area and let us has a mensurable acquaintance ship of effect degree of physics factors which effect sea surface wind in zhoushan sea area and acquaint oneself with physic process

    而海面風是影響溢油油團漂移軌跡和養殖業的重要因素，因此，對舟山海域的海面風進行研究，建立適合此區域的數值預報模式，可為研究該區域海面風作用過程提供數值預報工具，使我們對近海區域海面風場作用中物理因子的影響程度有更定量的認識，並對物理過程和影響機制有更深刻地了解。
  2. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  3. Lots have been done concerning repairable m / g / 1 queuing systems and many important results have been gotten. in this paper we make a further research about this system. by setting a n - threshold in the queuing we considered repairable m / g ( m / g ) / 1 queuing systems with two service speeds changing according the number of the customers in the system. we separately make a particular deep discussion to different disciplines of the service speed change

    當今對可修m g （ m g ） 1排隊系統已作了大量研究，獲得了許多漂亮的結果；本文對此作了進一步的推廣，通過對系統中的顧客數設置門限n值，首次考慮研究了服務臺具有兩種服務速度且會隨著系統中顧客數的多少而發生轉移地可修m g （ m g ） 1排隊系統，就服務速度的不同轉變規則分別進行了詳細深入的討論。
  4. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  5. Following, making development study from the three directions : the first one is how to reduce calculation when to use markowitz model. this text has improved the efficient frontier of markowitz model utilizing free risk assets, and reduced calculation about revenue rates " co - variance matrix utilizing single or multiple factors, and so on. the second one is to add thinking factors about, such as transaction fee, fund limitation, lowest transaction unit ' s limitation, risk measures and exchange rate risk of international portfolio securities, so as to make markowitz model closer to our country ' s practice

    接著，分三今方向對markowitz模型進行了拓展研究：第一個方向是運用markowitz模型時如何減少計算量，本文利用無風險資產來改進markowitz模型的有效邊界，利用單因子或多因子模型來減少收益率協方差的計算量等等；第二個方向是增加考慮因素，諸如交易費用、資金限制、最小交易單位限制，風險測度和國際組合證券的匯率風險，使markowitz模型更貼近我國的實際；第三個方向是對markowitz模型進行動態拓展研究，提出了將證券收益率看成是隨機序列時的投資決策模型，深入研究了m ? v有效邊界隨資產品種數增加而發生的漂移，並用解析方法和幾何圖形描述了漂移的軌跡和方向。
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