激子帶 的英文怎麼說

中文拼音 [jīzidài]
激子帶 英文
exciton band
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  1. Butler, apprehensive of the consequences of his agitation to an aged and feeble frame, ventured to utter to him a recommendation to patience.

    巴特勒擔心這樣的激動會給一個上了年紀而體質衰弱的人帶來怎樣的後果，壯著膽子上前勸他忍耐一些。
  2. The removal of nocturnal solitude, the superior quality of human mature female to inhuman hotwaterjar calefaction, the stimulation of matutinal contact, the economy of mangling done on the premises in the case of trousers accurately folded and placed lengthwise between the spring mattress striped and the woollen mattress biscuit section

    消除了夜晚的孤寂，人成熟的女性的溫暖勝過非人「湯壺」的熱氣以及早晨的接觸給予的刺激把長褲疊，豎著夾在彈簧床墊帶條紋的和羊毛墊子黃褐色方格花紋之間，就能節省熨燙之勞了。
  3. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  4. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  5. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  6. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  7. Zno is a directed band semiconductor with a big binding energy. it has gained substantial interest because its large exiton binding energy ( 60mev ), which could lead to lasing action based exiton recombination even above room temperature, such as led, ld and so on

    Zno是一種寬禁帶的直接帶隙半導體材料，具有非常高的激子束縛能（ 60mv ） ，即使在室溫條件下激子也不會分解，因此可以被用作光發射器件，如led和ld等。
  8. We adopted the same basis states as they used to construct the quantum - well d ~ centers " wave function

    用這個波函數研究了量子阱中帶負電激子的一些性質。
  9. We process calculations as the following : we calculate the binding energies of excitons in a square quantum - well wire in presence of a magnetic field for finite and infinite potential barrier case respectively

    A . balandin和s . bandyopadhyay也是利用變分法，採用二能帶模型計算了在外加磁場時的量子線中激子的基態束縛能。
  10. Zinc oxide as a wide band - gap ( 3. 3ev ) compound semiconductor with wurtzite crystal structure, is gaining importance for the possible application as a semiconductor laser, due to its ultraviolet emission at room temperature

    寬禁帶zno半導體為直接帶隙材料，具有六方結構，較高的激子束縛能（ 60mev ） ，室溫下帶隙寬度為3 . 3ev 。
  11. Zinc oxide ( zno ) is an interesting wide band gap ( 3. 3 ev ) semiconductor material with a binding energy of 60 mev

    氧化鋅是一種重要的寬禁帶隙（ 3 . 3ev ）半導體材料，它的激子束縛能高達60mev 。
  12. Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors, bulk - acoustic - wave devices, surface - acoustic - wave devices, varistors, light emitting, light detecting devices and so on. undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films

    Zno是一種新型的直接帶隙寬禁帶半導體材料，具有六方纖鋅礦結構，較高的激子束縛能（ 60mev ） ，較低的電子誘生缺陷和閾值電壓低等優點，在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。
  13. We also have analyzed the photoluminescence ( pl ) spectra of some zno films, it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap, and the pl peaks move to smaller wavelength because zn are substituted by fe, co, and cu, which cause the size of the film grains smaller and the effective band - gap bigger. the red emission of zno films is due to, on the one hand, decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly, on the other hand, the transition of electrons from deep donor level of the oxygen vacancies to the valence band

    另外，我們還對薄膜光致發光性質進行了分析和研究，結果表明：納米結構zno薄膜的紫外發光來源於帶間激子的輻射復合發光， pl譜的帶邊發射峰發生藍移是由於fe 、 co 、 cu對zn的替代使薄膜粒子的尺寸減小，使薄膜的有效帶隙增寬； zno薄膜的紅色發光，一方面是zno顆粒尺寸的減少，帶間的激子發射峰越來越弱直至猝滅，另一方面主要是與zno晶格中的o空位有關，由深能級復合發光引起紅光發射。
  14. It is widely accepted that zno is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap ( eg = 3. 3ev ) and large excitonic binding energy of 60 mev, which was testified by the results of optically pumped stimulated emission and lasing from zno thin films

    氧化鋅作為一種寬帶隙半導體（ 3 . 3ev ） ，激子束縛能大（ 60mev ） ，在室溫下容易獲得強的激子發射，而且可能成為紫外激光的重要材料。因此，對氧化鋅的研究已成為繼gan之後寬帶隙半導體研究的又一熱點。
  15. Nanoparticles show significant quantum - size effect ( such as energy band discreteness, band gap broadening, blue shift in spectra etc. ) as sizes of particles are smaller than bohr radis of exciton of bulk material with same composition ( for example, cds ’ s bohr radium is 6nm )

    當納米粒子的尺寸小於其塊狀材料的激子波爾半徑時（如cds的激子波爾半徑為6nm ） ，能夠表現出明顯的量子尺寸效應（如能帶離散，禁帶變寬，光譜藍移等） 。
  16. In this wave function, we consider the whole coulombic correlation among the particles, and the effect of the interchanged term caused by the same particles. where a and are the two variational parameters, and the parameters of ax and yx are determined by the two equations obtained from the variation of the energy of excitons

    ） 2 ） ，在波函數中，考慮到了粒子間的全部庫侖相互作用，並且計入因相同粒子不可識別所帶來的交換項的影響，和是變分參數，而_ x和_ x由變分激子態的能量得到的兩個方程確定。
  17. By the complicated mathematical calculating, we obtain the energy equation of charged excitons, from which we can determine the variational parameters a and, thus the complex energy of charged excitons can be calculated, and the binding energy and correlation energy of charged excitons can be obtained versus the quantum well width

    通過復雜的數學推導得到帶電激子體系能量的數學表達式，對變分參數和變分可確定出變分參數和，從而得到體系能，進而計算出體系的束縛能和相關能隨阱寬的變化。
  18. In the effective mass approximation, using the two - dimensional equivalent potential model and a simple two - parameter wave function, we calculate variationally the ground state binding energy and correlation energy of positively and negatively charged excitons in finite deep gaas - al0. 33ga0. 67as quantum wells. the results show fair agreement with the previous experimental results

    在有效質量近似下，我們採用二維等效勢模型，並且選取了數學形式簡單、物理意義明確的兩參數變分波函數，利用變分法數值計算了有限深gaas ? al _ （ 0 . 33 ） ga _ （ 0 . 67 ） as量子阱中帶電激子的基態束縛能及相關能，所得結果與實驗結果符合得很好。
  19. E. d. m. whittaker and a. j. shields [ 3 ] calculated the states of the quantum - well negatively charged exciton x - in a perpendicular magnetic field with this method. the basis states they used are products of an axial ( z ) part, determined by the quantum well confinement, and an in plane ( r, 6 ) landau - level wave function

    D . m . whittaker和a . j . shields將量子阱中單電子波函數和平面內電子的朗道能級波函數的乘積作為基函數，作線性組合后構成帶負電激子的波函數。
  20. In order to ensure the enterprise to survive, develop and strengthen in changing at full speed, keen competition environment day by day, try and establish person who study enterprise and make communication of zibo branch company practise for the means in order to 5, set up the strong leading group of study type as soon as possible, lead the staff to promote strength of studying energetically ; set up perfect information feedback, organize introspection, three major organizations that the member shared to study the system ; form the fine corporate culture

    為保障企業能夠在飛速變化、競爭激烈的環境中生存、發展和壯大，應該嘗試創建學習型企業，使淄博通信分公司能夠以五項修煉為手段，盡快建立堅強有力的學習型領導班子，帶領全體員工大力提升學習力；建立完善的信息反饋、組織反思、成員共享的三大組織學習系統；形成優良的企業文化。
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