濃度級次 的英文怎麼說

中文拼音 [nóngdùjícì]
濃度級次 英文
concentration class
  • 濃 : 形容詞1. （液體或氣體中所含的某種成分多; 稠密） dense; thick; concentrated 2. （程度深） （of degree or extent） great; strong
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 級 : Ⅰ名詞1 （等級） level; rank; grade 2 （年級） any of the yearly divisions of a school course; gra...
  • 次 : Ⅰ名詞1 （次序; 等第） order; sequence 2 [書面語] （出外遠行時停留的處所） stopping place on a jou...
  • 濃度 : potency; thickness; concentration; consistence; strength; consistency; density
  1. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  2. The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field

    具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。
  3. Based on the theoretical analysis and experimental researches, it is presented that the wider spectra are resulted from the many fluorophores with large numbers of vibrational energy levels on the ground level in the blood cells, and the reduction of the spectral intensity is due to the reabsorption of the blood cells and the energy transfer of the collisions between the fluorophore and another one or other macromolecule. on the other hand, when the concentration of the blood cells is increased, the reabsorption of the blood cells, the secondary fluorescence due to the reabsorption and the influence of the concentration on the energy levels of fluorophores are all the factors of the red - shifted spectral peaks

    在進行理論分析和研究的基礎上，提出了因血細胞中存在多種熒光團，且這些熒光團的電子能級上又存在大量的不同的振動能級，從而導致被激發的熒光團發出較寬的熒光光譜；血細胞濃度的增大，熒光團以及其他大分子之間的距離變小，造成它們之間因碰撞的能量轉移概率加大，因而易產生熒光猝滅，結果導致熒光強度的變小；血細胞溶液中重吸收所導致的熒光猝滅和二次熒光發射，以及血細胞濃度的變化對其中熒光團能級系統的影響都是導致熒光峰值波長「紅移」的原因；進而研究了led光誘導血細胞產生熒光光譜的機理。
  4. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  5. Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定
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