濃摻 的英文怎麼說

中文拼音 [nóngchān]
濃摻 英文
heavy doping
  • 濃 : 形容詞1. （液體或氣體中所含的某種成分多; 稠密） dense; thick; concentrated 2. （程度深） （of degree or extent） great; strong
  • 摻 : 摻動詞[書面語] （持; 握） hold
  1. However, it is not easy to incorporate large n concentration in gap due to the large differences in lattice structure ( gan belongs to wurtzite structure while gap zinc blende structure ) and in lattice constant ( ~ 20 % ) between gan and gap, which will lead to an extremely large miscibility gap

    然而要在gap中實現高濃度的摻氮並不容易。這主要是由於gap和gan之間較大的物理特性的差異，特別是晶格結構和晶格常數的差異，使得gap和gan存在較大的可混溶性間隙，從而難以生長高質量的高摻氮的gap材料。
  2. The additional flow is formed by the device of dentoid baffle, and the application of the device of dentoid baffle cooperated with a stilling basin has been investigated by systematic model tests. based on the research results, the hydraulic problems such as the characteristics of hydrodynamic pressure and cavitation on the head of the denotid baffle, the properties of flow under the condition that the device of denotid baffle is used with a stilling basin, the hydraulic computation about a stilling basin, the estimation of energy dissipation and its various affection factors, the mechanism and effect of energy dissipation, and distributions of velocity and pressure and aerating concentration, etc, have been analyzed ; the method and step of hydraulic design of device of denotid baffle by which the additional flow is produced has also been proposed

    文中利用齒墩設施實現附加射流，對齒墩設施與消力池聯合應用進行了大量的和系統的模型試驗，分析研究了中低佛勞德數條件下，齒墩墩頭的動水壓強及空化特性，齒墩設施與消力池聯合應用時的流態特性，消力池的水力計算，消能量的估算及其各種影響因素，消能機理和效果，消力池內的流速、壓強特性，摻氣濃度分佈等水力學問題，並提出了實現附加射流齒墩設施的水力設計方法和步驟。
  3. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  4. The influence of y2o2s : eu phosphors fluorescent spectra, chroma and luminescing efficiency is studied with the changing of concentration of eu34 " ion, and the suited concentration of eu3 + ion is acquired, all these provided support for the research on the yzc ^ s : eu, mg, ti long - persistent phosphors structure and luminescence performance

    研究了不同eu含量對y _ 2o _ 2s ： eu熒光體光譜性能、發光效率和色度的影響，給出了最適宜的摻eu濃度，為進一步研究探討y2o2s ： eu ， mg ， ti長余輝磷光體的基質組成和發光性能提供依據。
  5. Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations

    超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。
  6. The infrared absorption spectra and ultra - visible absorption spectra were measured. it was analyzed that the absorption side of in : linbo3 doped with virous concentrations of in shifted in comparison with that of pure linbo3 in normal site after the nb at li site was substituted completely

    測試了in ： linbo _ 3晶體的紅外吸收光譜和紫外-可見吸收光譜，分析了不同摻雜濃度的in ： linbo _ 3晶體的吸收邊相對移動的現象，確定了in ~ （ 3 + ）的摻雜閾值濃度為2mol 。
  7. In manganite perovskites, substitution of divalent ions ( alkaline earth metals viz. ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價格補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  8. 6. by comparing the relative intensity between 914nm radiation and 1064nm radiation in nd : yvo4 with different nd concentration. we design a 457nm all - solid - state blue laser as pumping source for qpm - opo

    在不同摻雜濃度時， gi4nm譜線與1064urn譜線的輸出強度的相對變化，進廳了半導體激光器泵浦d ： yv0 。
  9. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  10. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  11. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  12. Whenever the door of this coalhole was opened a violent whiff of alcohol mingled with the scent of stale cooking in the lodge, as well as with the penetrating scent of the flowers upon the table

    只要把這個臟乎乎的房間的門一打開，就有一股濃濃的酒味飄出來，裏面還摻雜著門房室里的殘羹剩菜的怪味和桌子上鮮花的撲鼻香味。
  13. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  14. Ca, sr, ba ) in the a sublattice, introduces mn4 + ions or holes into the system. it is generally considered that the concentration of holes is equal to the concentration of divalent cations because of the charge compensation by controlled valencies. a number of publications exist in the literature on the synthesis of manganite perovskites

    在類鈣鈦礦型晶體結構中通過摻入二價堿土金屬（如ca ， sr ， ba ）可以在系統中產生mn ~ （ 4 + ）或氧空位，由價位補償的原理，理論上摻入的二價離子的濃度和氧空位的濃度相等。
  15. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
  16. The laser damage threshold of the ybyp _ xv _ ( 1 - x ) o _ 4determined by nd : yag laser, which showed a decreasing tendency with the increase of the dopant concentration

    利用nd : yag激光器測試晶體的激光損傷閾值，隨著摻雜離子濃度的增大，激光損傷光功率密度呈減小趨勢。
  17. From then on, the above two shortcomings had been overcome. impurity concentration and junction depth can be accurately controlled and freely adjusted. both low and high dopant concentration can be gained easily, and ideal distribution of ga in si can also be achieved with uniform surface concentration, good repeatability and high eligibility and excellence ratio, which have greatly improved comprehensive performances of the devices

    此工藝發明以來，克服了上述兩者的弊端，雜質濃度和結深能準確控制而又能任意調整，可進行低、高濃度階段性摻雜，得到元素ga在si中的理想分佈，而且表面濃度均勻一致、重復性好、合格率和優品率高，改善和提高了器件的綜合性能。
  18. ( 1 ) effects of externally applied electric fields on photorefractive two - beam coupling are analyzed. theoretic dependence of the intensity gain factor on applied field e0 in sbn : 60 is presented. and the experimental results obtained in two sbn : 61 : cr crystal samples with different dopant concentration show clearly that for properly applied fields, a larger f can be achieved effectively than that obtained with no field applied

    由兩塊不同摻cr濃度的sbn 61 cr晶體得到的實驗結果同時表明，適當的外電場作用能夠有效提高晶體的二波耦合增益，並且，外電場的作用使晶體的響應速度大大提高，而晶體的最佳耦合角與外電場之間沒有明顯的依賴關系。
  19. 1 、 through the theoretical analysis and the medici simulation, according to the design directive, the structural parameters are designed comprehensively, including the dopant concentration and the depth of the emitter, the base dopant concentration and the depth ( especially the ge ratio ), the dopant concentration and the depth of the collector

    主要工作是: 1 、通過理論分析和medici模擬，綜合設計得出符合設計指標的結構參數，主要包括:發射區的摻雜濃度和厚度?基區的摻雜濃度和厚度及基區中ge的組分比?集電區的摻雜濃度和厚度。
  20. A kind of measurement was developed to measure the air concentration of water and the result showed the possibility of entrained air existing near the wall of drop shaft. that is to say, the wall of drop shaft may be protected by entrained air from cavitation damage to some extent

    本文設計了一種適用於近壁區水流摻氣濃度測量的方法，對空腔段水流摻氣濃度進行初步測量，發現井壁附近水流存在摻氣的可能，這對改善水流空化條件能起到積極作用。
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