濺射淀積 的英文怎麼說

中文拼音 [jiànshèdiàn]
濺射淀積 英文
sputter deposition
  • : 動詞(液體受沖擊向四外射出) splash; spatter
  • : Ⅰ動詞1 (用推力或彈力送出) shoot; fire 2 (液體受到壓力迅速擠出) discharge in a jet 3 (放出) ...
  • : Ⅰ動詞(沉澱) form sediment; settle; precipitateⅡ名詞(淺的湖泊, 多用於地名) shallow lake
  • : Ⅰ動詞(積累) amass; store up; accumulate Ⅱ形容詞(長時間積累下來的) long standing; long pending...
  1. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面,可以用偏置濺射淀積法的層間介質(見924節)或用平面化工藝來近似獲得。
  2. Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities

    通過法,在玻璃襯底上了tini薄膜,並在600進行了真空退火, dsc法測得其馬氏體逆相變峰值溫度為75 ,利用原子力顯微鏡,對玻璃基tini形狀記憶合金薄膜的襯底面與生長面進行了表面微觀形貌分析,發現:生長面晶粒呈現出沿薄膜法線方向柱狀堆的趨勢,晶粒緻密性差,微孔洞多;而襯底面晶粒緻密,幾乎沒有微孔洞存在。
  3. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias - sputter deposition ( see section 9. 2. 4 ) or by using planarization

    對于超大規模集成電路的平面狀表面,可以用偏置濺射淀積法的層間介質(見9 2 4節)或用平面化工藝來近似獲得。
  4. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數,在單晶硅襯底上-了tini薄膜,並進行了超高真空退火, dsc法測得其馬氏體逆相變峰值溫度為72 ,利用能譜分析( eds )技術測得其ti含量約為51at ,通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x線衍( xrd )分析,發現在用大功率( 2000w )直流磁控法制備tini薄膜過程中,存在ti 、 ni與si的雙向擴散,發生了界面反應,並有三元化合物ni _ 3ti _ 2si生成。
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