濺射率 的英文怎麼說

中文拼音 [jiànshèlǜ]
濺射率 英文
sputtering rate
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 率 : 率名詞（比值） rate; ratio; proportion
  1. Excellent results have been obtained by using dc magnetron sputtering technology. a solar absorptance of 0. 94 - 0. 96 with an emittance of 0. 04 - 0. 06 at 100 has been achieved

    磁控濺射技術的準確結果顯示這種真空管在100時能夠達到吸收率： 0 . 94 - 0 . 96
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  3. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  4. Moreover, the tio2 film particles distribute more uniform and join tightly with the increasing of power, but the surfaces of films become closer and smoother when pressure increased or the ratio of oxygen decreased

    提高功率可提高膜的覆蓋度，使濺射膜顆粒分佈均勻，結合更加緊密。提高壓力或減小氧氬比，可使濺射膜的顆粒更加密集。
  5. In this paper, fluorocarbon films are deposited on polyetylene terephalate ( pet ) substrate by radio frequency magnetron sputtering polytetrefluoroethylene ( ptfe ) targets to examine the effect of discharge condition on the properties and mechanism of deposited films. the effect of the power, pressure and treating time on morphology is observed by means of scanning electron microscopy ( sem ) and atom force microscopy ( afm ). it is found that the fluorocarbon film particles distribute more uniform and join tightly with increasing power, the surfaces of films become closer and denser as pressure increases

    利用掃描電鏡（ sem ）和原子力顯微鏡（ afm ）研究了成膜機理以及cf膜的表面形貌，觀察了不同功率、壓力和時間下對氟碳膜表面形貌的影響，系統研究了氟碳膜表面結構隨功率和壓力的變化規律，發現功率提高使得氟碳膜顆粒分佈均勻，結合更加緊密，而提高壓力，氟碳膜的顆粒更加密集，並且濺射條件不同，粒子的形態、粒子間構成的介觀結構也不相同。
  6. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  7. Abstract : based on the splashing mechanics microeffect ， this paper introduced the principle of ion beam removal machining it analysed the influenced factors of production efficiency ， studied the structure and working principle of the device of ion beam removal machining

    文摘:從離子束濺射的微觀力效應出發，介紹了離子束去除加工的原理，分析了影響加工效率的因素，並對加工裝置的結構及工作原理進行了探討。
  8. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  9. Development of cylindrical rotating magnetrons with high target utilization rate

    高靶材利用率的新型磁控濺射器
  10. The xrd showed that the crystalline of samples prepared in various o _ ( 2 ) partial pressure and various sputtering power was amorphous, the anatase crystalline formed when heat treatment temperature was above 450, and heat treatment temperature was higher, the crystalline was better. sem showed that the crystal grams formed on the surface of films when the o _ ( 2 ) partial pressure was high ; the obvious and big grains appeared hi the surface with improvement of heat treatment temperature

    Xrd分析表明，不同氧氣分壓下制備的樣品基本是無定型結構，不同濺射功率下制備的樣品基本也是無定型結構，當熱處理溫度高於450時，試樣出現了晶面趨向為（ 101 ）的銳鈦礦相，隨著熱處理溫度的升高，結晶程度增大； sem分析表明：隨著氧氣分壓的升高，試樣表面出現微小結晶顆粒；隨著熱處理溫度的升高，試樣表面出現了相當明顯的結晶顆粒，試樣的比表面積增大。
  11. The ratio f / c decreases with the increase of power, but increases when pressure increase. the power has more marked effect on f / c than that of pressure. contact angle of fluorocarbon films obtained at different of power, pressure and treating time

    最後研究了不同功率、壓力、濺射時間對氟碳膜憎水性能的影響，並測量了氟碳膜的接觸角，發現接觸角隨功率的增加而減小，隨壓力的增加而增大。
  12. When the sputtering pressure keeps constant, the transmittance of the films first increase, and then decrease subsequently with the ar partial pressure of the films increase

    濺射氣體總壓一定時，薄膜透過率隨氬氣分壓的升高先升高后降低。
  13. Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film

    本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。
  14. Xrd analysis proved that the films were still amorphous. raman analysis indicated that the composition and structure varied from the bulk glasses in that the sputtering rate for each element was different. more se - se bonds formed in the films

    用磁控濺射方法以此靶材濺射得到了1 - 10 m厚的、均勻的ge - ga - s - se硫系玻璃薄膜，其大的折射率表明其用於集成光學具有明顯的優勢。
  15. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯底溫度400 ，濺射功率100w ，氧氬比為1 : 6 ，退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯底溫度室溫、濺射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  16. As the partial pressure of o2 increases the cathode voltage of the target increases in order to maintain the same current intensity and the sedimentation rate gradually decreases

    氧氣分壓的增大，維持同樣濺射電流強度的靶陰極電壓增大，薄膜的沉積速率逐漸減小。
  17. Besides of those, the pattern of the target is novel after the long time ' s erosion. there is no erosion ring on its surface, so we can use this method to improve the utilization rate greatly

    更重要的是：此時靶面被刻蝕的狀態比普通磁控濺射的要均勻得多，刻蝕深度值是從邊緣到中間逐漸增大的，在靶面並沒有出現通常的刻蝕環，因此這種磁控配置大大提高了靶的利用率。
  18. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  19. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  20. Linearity of the calibration curves was rather good after correction of sputter rate, with correlation coefficients of above 0. 99 for most elements

    經濺射率校正後的工作曲線線性較好，大部分元素的相關系數在0 . 99以上。
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