濺底 的英文怎麼說

中文拼音 [jiànde]
濺底 英文
bottom splash
  • : 動詞(液體受沖擊向四外射出) splash; spatter
  • : 底助詞(用在定語后, 表示定語和中心詞之間是領屬關系, 現在多寫作「的」)
  1. This would have been no serious hindrance on a week - day ; they would have clicked through it in their high pattens and boots quite unconcerned ; but on this day of vanity, this sun s - day, when flesh went forth to coquet with flesh while hypocritically affecting business with spiritual things ; on this occasion for wearing their white stockings and thin shoes, and their pink, white, and lilac gowns, on which every mud spot would be visible, the pool was an awkward impediment. they could hear the church - bell calling - as yet nearly a mile off

    在平常的日子里,這並不是什麼大不了的障礙她們都是穿的高木頭套鞋和靴子,可以滿不在乎地從水中趟過去但是這天是禮拜天,是她們拋頭露面的日子,她們口頭說的是去進行精神上的陶冶,而實際上是去進行肉體征服肉體的談情說愛這個時候她們都會穿上白色的襪子和輕俏的鞋,有的穿粉紅的連衣裙,有的穿白色的連衣裙,有的穿淡紫色的連衣裙,只要上面上了一點兒泥都能被人看見這片水塘把她們擋住了,叫她們犯了難。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控射鍍膜機上,採用直流磁控射法在cdznte晶體上制備出cu ag合金薄膜,揭示了氣體流量、直流射功率、勵磁電源功率、工作氣壓和襯溫度等工藝參數對沉積速率的影響規律。結果表明射功率對沉積速率的影響最大,隨射功率的增大沉積速率快速增大。
  3. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明,對于ito薄膜,薄膜的光電性能薄膜結構的擇優取向性和與襯溫度、射氧氣壓等工藝參數有很大關系, ito薄膜的sem表明,樣品表面較平整,且晶粒也比較緻密。
  4. If spillage occurs, the affected skin should be thoroughly washed.

    如果出藥液,應徹沖洗受侵染的皮膚。
  5. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻射法在si襯上制備立方氮化硼,靶材為hbn , 。工作氣體為氬氣。
  6. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻射( rf )系統,靶材為燒結的六角氮化硼( hbn ) ,工作氣體為氬氣(或氬氣和氮氣的混合氣) ,在硅襯上沉積氮化硼薄膜。
  7. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si ( 100 ) ( 8 15 cm )襯上,靶材為h - bn靶(純度達99 . 99 ) ,射氣體為氬氣和氮氣混合而成,制樣過程中,襯加直流負偏壓。
  8. The stream showed clear and smooth-looking in the glasses and, below the curl of falling water, the spray from the dam was blowing in the wind.

    小河在望遠鏡里顯得清澈而平靜,打著漩渦的水從攔水壩瀉下來,下的水花在風中飛
  9. It was found that an uniform and compact tio2 nanoparticulate film can be deposited on pet substrates in a short time, and it ' s thickness increases with the treating time. when the thickness comes to a critical value, there grows a greater size cluster on the nano - sized film. this is an interesting film growing pattern, which has never been reported

    與以往報道的生長模式不同,發現在很短的時間內即可在基射生成緻密均勻的納米膜層,其膜厚隨著時間的延長而增加,且當達到一定厚度時,又在原有納米膜層上生長出更大尺寸的團蔟結構。
  10. “ in knowledge, as in swimming, he who flounders and splashes on the surface, makes more noise, and attracts more attention than the pearl - diver who quietly dives in quest of treasures to the bottom

    說到知識,好比游泳,在水面翻騰起水花兒的總是響聲更大更引人注目,不象采珍珠的那樣,悄然入水,潛往深深的海尋求寶藏。
  11. 13 loading of barges and hoppers, if utilized for marine transportation of dredged materials, shall be controlled to prevent splashing of dredged materials to the surrounding water

    用作海上運送挖掘物料的駁船及卸式駁船,在裝載物料時應小心操控,以防挖掘物料入周圍的水中。
  12. Determined by dsc. whereafter, the surface micro - morphology of both sides of tini sma thin film deposited on glass was investigated by atomic force microscope ( afm ), and the difference of morphology between the two sides is observed. it has been shown that, in the growing surface of sputtered tini film, the trend of grain to accumulating along the normal direction like a column is clearly observed, and the grain is very loose which resulted in more microcavities, but in the surface facing to glass substrate, grain is so compact that there are hardly microcavities

    通過射法,在玻璃襯上淀積了tini薄膜,並在600進行了真空退火, dsc法測得其馬氏體逆相變峰值溫度為75 ,利用原子力顯微鏡,對玻璃基tini形狀記憶合金薄膜的襯面與生長面進行了表面微觀形貌分析,發現:生長面晶粒呈現出沿薄膜法線方向柱狀堆積的趨勢,晶粒緻密性差,微孔洞多;而襯面晶粒緻密,幾乎沒有微孔洞存在。
  13. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的射特性進行了研究,採用離子束射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜,探索該法制備cn _ x薄膜的最佳工藝參數,並利用tin _ y薄膜為襯以促進cn _ x薄膜的生長。
  14. In order to find a new way to prepare antibacterial fibers, photocatalytic oxidation of titanium dioxide ( tio2 ) has been used to modify the surface property of polymers in our experiment. tio2 films are deposited on polyethylene terephthalate ( pet ) substrates by means of rf magnetron sputtering using pure ti ( 99. 99 % ) as the target and ar mixed with o2 as reactive gas

    本文利用磁控反應射技術,以高純度鈦( ti )為靶材,氧氣為活性氣體,在pet基上反應射沉積tio _ 2 ,將納米tio _ 2的光催化氧化特性應用於高聚物表面改性,為進一步開發抗菌織物打下基礎。首次在高分子pet基射沉積了氧化鈦薄膜。
  15. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控射法,通過優化zno : al薄膜的制備工藝,如靶電壓、本真空度、工作氣壓、襯溫度、 o _ 2 ar ,得到可用於硅薄膜太陽能電池背電極的zno : al薄膜。
  16. ( 4 ) the study of the optical band gap of cnx film by uv - vis spectrophotometer. ( 5 ) by using the microhardness tester, we study the hardness of cnx film on the ceremic substrate by dc magnetron reactive sputtering with the feed ar and n2 flow rate, film thickness, substrate temperature and substrate bias

    ( 5 )用直流磁控反應射法,以陶瓷作為襯,對在ar和n2不同流量、不同膜厚、不同基片溫度和對基片施加不同偏壓下沉積的薄膜,用< wp = 4 >顯微硬度計研究測試了不同工藝參數下的相應硬度。
  17. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術,採用各種對si襯處理的方法,如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、射緩沖層法等進行了試驗與研究,通過x射線衍射技術( xrd ) 、光致發光技術( pl ) 、掃描電子顯微術( sem ) 、透射電子顯微術( tem )等檢測,並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析,發現外延晶體的生長質量得到了明顯提高。
  18. Freedom from flicker, no spluttering and low glare. can thoroughly eliminate eye fatigue. free of liquid mercury, it is the best light source for environmental protection

    無閃爍、無射、低眩光,徹消除眼睛疲勞,且不含液態汞。是綠色環保的首選光源。
  19. The processing parameters of preparing plzt electro - optic films were 400 of substrate temperature, 100w of sputtering power, 1 : 6 ratio of oxygen to nitrogen and 650 of annealing. the processing parameters of preparing sno2 film were room temperature of substrate temperature, 200w of sputtering power, 1 : 2 ratio of oxygen to nitrogen and 600 of the annealing temperature

    制備plzt電光薄膜的最佳工藝參數為:襯溫度400 ,射功率100w ,氧氬比為1 : 6 ,退火溫度為650 ;而制備二氧化錫透明電極的最佳工藝參數為:襯溫度室溫、射功率200w 、氧氬比為1 : 2 、退火溫度為600 。
  20. The realization of the algorithm drives the research of micro - electron structure. 2. the la2o3 thin film is prepared by rf technology, the film is analyzed by arxps, the thickness is calculated by quantitative analysis software, the thickness of sio2 thin film between la2o3 and si is 0. 6nm

    利用射頻射鍍膜技術在si片上制備了la _ 2o _ 3膜,通過變角xps分析和多層結構的定量計算,測得la _ 2o _ 3與si襯之間的sio _ 2層厚度為0 . 6nm 。
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