無缺陷硅 的英文怎麼說

中文拼音 [wúquēxiànguī]
無缺陷硅 英文
zero defect silicon
  • 無 : 無Ⅰ動詞（沒有） not have; there is not; be without Ⅱ名詞1 （沒有） nothing; nil 2 （姓氏） a surn...
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  2. These solutions are basically focused on reducing low - si substrate conduction and loss, resulting in an elimination of wave propagation in the substrate, and ther efore improving the performance of the passive elements. they are accompanied by drawbacks

    以上方法基本是集中在改善低阻硅襯底的傳導和降低損耗，來改善射頻微波無源器件的性能，但這些方法均存在許多不同程度的缺陷。
  3. To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display

    對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。
  4. In this paper, molecular dynamics simulation is carried on the nanometric cutting of defect - free monocrystalline silicon. based on simulations, a reasonable explanation is given to the forming mechanism of chip and surface machined in the cutting process of monocrystalline silicon. moreover, the feasibility of brittle - ductile transition of monocrystalline silion is studied with the method of first principle stress

    對內部無缺陷的單晶硅的納米切削過程進行了分子動力學模擬.通過模擬結果，對單晶硅納米切削中的切屑形成過程和加工表面的形成過程做出了合理的解釋.並用第一原理應力計算方法對單晶硅納米切削過程中的脆塑轉變的可行性進行了研究
  5. Zero defect silicon

    無缺陷硅
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