熔覆成形 的英文怎麼說
中文拼音 [róngfùchéngxíng]
熔覆成形
英文
lcf-
4, the formation mechanism of the n - sic particles in the ceramic coating prepared by the nano - micrometer n - sic / al2o3 composite powder located within m - al2o3 grains is revealed : m - al2o3 would be well melted during spraying and form droplet, the n - sic particles existing on the surface of droplet, then the particle enter the droplet when it is impacted and flattened on the substrate
4 、提出了利用納米一微米n - sic al _ 2o _ 3包覆復合粉末所制的陶瓷塗層中n - sic粒子分佈於m - al _ 2o _ 3晶內的機理:在噴塗過程中微米級al _ 2o _ 3完全熔化形成液滴, n - sic粒子存於液滴表面,在液滴撞擊基材平鋪過程中n - sic粒子進入液滴內部形成。Fluxes and cover gases are currently used for the melting and production processes, and semi - solid thixocasting is also used to lower the operation temperature ; but there still remain many problems
目前一般採用熔劑覆蓋法和氣體保護法熔煉生產鎂合金,或採用半固態射鑄成形工藝以降低作業溫度,但都存在著不少缺點。Using 304l wire as the cladding material, the experimental results proved that the relationship among welding bead width, welding current and speed could be expressed with a plane in an x - y - z coordinate
對採用304l不銹鋼作為單一熔覆材料的成形試驗研究表明:電流、成形速度與成形軌跡寬度的關系可以採用平面幾何關系表示。Laser solid forming ( lsf ) was an advanced fabrication technology that developed from rapid prototyping technique in 1990 ' s and progressed very fast in the recent years. it has a promising future since a density metal component can be rapidly deposited by laser cladding metal materials additively
激光立體成形技術是於二十世紀九十年代在快速原型技術的基礎上發展起來的一項新的先進的製造技術,該技術採用同步送粉激光熔覆方法沿高度方向逐層堆積金屬粉材,從而最終獲得三維實體零件。In this section, a small organic molecule is applied to instead of pzt with the purpose to avoid the rigidity difference between cpe and pzt. ( 1 ) there is no plateau area in the conductivity curve of cpe / pzt / vgcf composite, which is due to the molecular level blending of cpe and zkf in molten condition during the preparation of cpe / zkf / vgcf composites, further verifying that pzt is conducive to the formation of conductive loop
通過對cpe / zkf / vgcf復合材料的分析探討得出: ( 1 ) cpe / zkf腳gcf復合材料的導電曲線上並不存在類似cpe / pzt渾gcf復合材料的半導區平臺,這是由於cpe億kf / vgcf復合材料的制備是在cpe和zkf熔融的狀態下的分子水平的共混,進一步證明了pzt對導電迴路形成的雙重作用;同時,由於zkf對vgcf的包覆作用,使cpe億kf那gcf復合材料導電臨界值較高。分享友人