熔體生長 的英文怎麼說

中文拼音 [róngtǐshēngzhǎng]
熔體生長 英文
melt growth
  • 熔 : 動詞（熔化） melt; fuse; smelt
  • 體 : 體構詞成分。
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. Some melt carry-over improves the wetting and equilibrium growth conditions.

    在其中攜帶一點熔體會改善浸潤情況和平衡生長條件。
  2. Here is the result, during yvo4 odd - crystal growing under cz method, while fusibility contain nature - convection by temp - grads and impose - convection by crystal - circumvolve, which make it difficult to growth large dimension odd - crystal

    數值模擬的結果表明，在cz法生長yvo _ 4單晶過程中，由於熔體中存在著因溫度梯度引起的自然對流和晶體旋轉引起的強迫對流，使生長大尺寸單晶有著一定的困難。
  3. Processing and growth mechanism of al - doped rutile single crystal by flame fusion method

    單晶體焰熔法生長實驗及機理
  4. The crystallization and melting behavior of mellocene - catalized branched and linear polyethylenes of low molecular weight was studied. it was found that the crystalline lattice of branched polyethylene is larger than that of linear polyethylene because of the existence of branched chains. the melting behavior of branched polyethylene is similar to that of linear polyethylene since the branched chains can not enter the lattice. however, the crystalline behavior of low molecular weight branched polyethylene is the same as that of high molecular weight linear polyethylene, but different with that of low molecular weigh linear polyethylene. kinetics theory analysis evidenced that the transition temperature of growth regime of the branched polyethylene is about 20 lower than that of linear polyethylene with the same molecular weight. it may be attributed to the existence of short branched chains

    研究了金屬茂催化的低分子量支化聚乙烯和線性聚乙烯的結晶及熔融行為，發現支化聚乙烯的結構與線性聚乙烯相同為正交結構，但晶格略有膨脹.支鏈的存在對熔融行為影響不大，兩種聚乙烯的熔點均隨結晶溫度的升高而非線性增加，表現出低分子量樣品的共同特徵.但支鏈的存在對結晶行為卻有很大的影響，主要是由於支鏈的存在降低了晶體的結晶速率從而影響結晶過程，使得低分子量的支化聚乙烯的結晶行為與高分子量線性聚乙烯的結晶行為相似而與低分子量的線性聚乙烯不同.動力學分析表明，低分子量的支化聚乙烯的結晶生長方式的轉變溫度比同等分子量的線性聚乙烯降低了約20
  5. Ultrafine powder, the high quality ultrafine power has been got. ( 2 ) the perfect rutile has been got with flame fusion method in developed domestic sjz sintering machine, and the technology of crystal growth has been clearly analyzed. in the end the suitable techniche has been got on the basis of systemic study on the conditions of growth

    通過對晶體生長中的籽晶方向、氣氛等的作用的大量深入的研究，得出了金紅石晶體焰熔法生長現階段的最佳工藝條件，即籽晶（ 001 ）在氫氧比為1 ： 1的附近，通過加氫進行擴肩，然後在1450加氧退火24hr后就能夠獲得完整透明的金紅石單晶。
  6. Several flux systems have been studied, especially about the mixed flux system. we found that the use of mixed systems such as k2co3 - b2o3 - naf had greatly decreased the viscosity of the melt, decreased the saturation point and improved the growth quality of the crystal. the flux system naf - b2o3 is favour of decreasing the volatilization and the saturation point of the melt

    對kabo晶體的幾種助溶劑體系尤其對復合助溶劑體系進行了研究，我們發現復合助溶劑體系如： k _ 2co _ 3 - b _ 2o _ 3 - naf有利於減小熔體粘度，降低飽和點溫度，改善晶體的生長性能； naf - b _ 2o _ 3體系有利於降低熔體揮發性和飽和點溫度。
  7. Find the law of the influence from the injection pressure to the filling time and the cavity pressure and make certain of the best filling time, injection time and injection pressure. though the analysis of the flowing velocity and pressure spread of the key position element in the injection parts in different gate position, we forecast the injection parts quality and the possibility injection flaw and its position, optimize the gate position. in this paper, though the research of analogue of the runner system of metal - powder injection molding and the process of injection molding, we get the law of how the injection parameter influence the injection process

    在相同的注射條件下，通過分析喂料在不同直徑和長度流道中的流動規律，得到了喂料在流道中的速度場、壓力場和溫度場，找到了流道長徑比的合理取值范圍，並得出通過改變流道設計可實現對現有設備資源充分利用的結論；給出了不同注射壓力下，型腔壓力與充模時間關系曲線和喂料熔體平均充填速度與充模時間關系的曲線，得到了注射壓力對充填時間和型腔壓力的影響規律，確定了最佳的充模時間、注射時間和注射壓力；通過分析採用不同位置澆口注射時注射件關鍵位置單元的流動速度和壓力分佈，預測了注射件的成形質量，或可能產生的注射缺陷及位置，優化了澆口設置。
  8. Abstract : the affects of crystal absorption for heat radiation on crystal growth, which include : the heat loss of the hot grower, the chara - cteristic of temperature - time of crystal growth, the pattern of fluid flow and the shape of interface, the interface inversion of crystal, the temperature distribution and the thermal stress distribution, are reviewed in this paper

    文摘:本文綜述了晶體對熔體熱輻射吸收對晶體生長的影響，包括對熱腔熱耗散的影響；對晶體生長溫度時間特性的影響；對液流形態和固液界面形狀的影響；對晶體界面反轉的影響；對晶體中溫度分佈和應力分佈的影響。
  9. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  10. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  11. 6. through analysis and discuss of the precipitation mechanism of cr phase, it can be deduced that primary ( cr ) phase exhibits petal shape or triangular due to solute and heat flow in local fluid

    6通過對初生相（ cr ）相析出機制的初步分析和探討，認為由於熔體局部的溶質和熱流波動，初生相的生長形態有花瓣狀或三棱形。
  12. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  13. The optimum mole ratio of flux to composition was found to be 6 : 4, which can restrain the formation of pyrochlore phase. it was revealed that b2o3 additive played an important role in increasing the size of single crystals. 4

    助熔劑和組分間的摩爾配比以6 ： 4為佳，能夠抑制焦綠石相的產生；此外，添加少量的b _ 2o _ 3作助熔劑有利於晶體的長大。
  14. In this paper, pmnt, pznt single crystals in the vicinity of the morphotropic phase boundary were obtained by high - temperature solution technique. the growth, structure and phase stability of single crystals were studied. the results are shown as follows : 1

    本論文採用高溫熔液法技術，對用高溫熔液法生長弛豫鐵電單晶材料工藝進行了研究，成功地制備出準同型相界附近的pmnt 、 pznt單晶材料，分析了晶體形成、晶體結構及其相結構穩定性，並對生長機理作了初步探索，主要研究結論如下： 1
  15. Effect of additional alloy composition on aluminum alloy directed melt oxidation growth

    補加合金成分對鋁合金熔體直接氧化生長的影響
  16. The effects of some unstable factors in pet production technology on melt direct spinning were discussed

    摘要論述了聚酯生產過程中一些不穩定因素對熔體直紡長絲的影響。
  17. In this thesis, some fundamental topics on p - sic crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p - sic films deposited on si have been discussed. in brief, following major creative results have been obtained : 1

    本文探索碳化硅晶體生長技術的若干基本問題，特別對熱系統的設計和熱場分佈問題，以及用- sic薄膜在碳飽和硅熔體中進行液相外延生長的基本工藝問題等進行了研究，獲得以下主要創新結果： 1
  18. The technical breakthroughs in growth of nd : cngg had been made. in particular, continuous laser operation was achieved from nd : cngg pumped by ld. when the crystal wafer was end - pumped by one bar of ld with 807nm wavelength, the cw laser output power of 123. 1 mw was obtained with slope efficiency of 22. 3 %

    本論文用自動化熔體提拉技術成功生長出< 111 >方向的直徑25mm以上，長度80mm以上的平界面無核心nd : cngg單晶，確定了晶體結構和物相，測量了晶體的光譜性能，晶體消光比達到34db ，晶體生長技術有新的突破，實現了連續激光運轉，用單支807nm半導體激光二極體端面泵浦該晶體片子，在國內首次獲得123 . 1mw的1 . 062 m連續激光輸出，斜效率達22 . 3 % 。
  19. At present, the crystal growth equipment is equipped with vacuum tube hf ( lmhz - 2. 5mhz ) induction heating power supply. while this supply has many disadvantages, such as low reliability, short longevity of vacuum tube, operational safety, low transfer efficiency

    目前，用於晶體生長的區熔式單晶爐配套使用的是國外進口或國內生產的真空電子管式高頻感應加熱電源，存在諸如可靠性差、電子管使用壽命短、操作不安全、變換效率低等問題。
  20. While this kind of power supply has many disadvantages, such as low reliability, short longevity of vacuum tube, operational safety and low transfer efficiency, existing huge capacity solid induction heating power supply cannot replace them to meet industrial needs

    目前，國內用於晶體生長的區熔式單晶爐配套使用的是國外進口或國內生產的真空電子管式高頻感應加熱電源，存在諸如可靠性差、電子管使用壽命短、操作不安全、變換效率低等問題。
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