熔體破壞 的英文怎麼說
中文拼音 [róngtǐpòhuài]
熔體破壞
英文
melt fracture-
According to this scenario, researchers could never find evidence of such early chondrules because all these objects would have been destroyed by the melting of the chondritic asteroids into which they accreted
在這個情形下，研究人員恐怕永遠也無法找到如此早期的球粒證據，因為所有這些物體在聚合的過程中，都會因為球粒隕石小行星熔化而被破壞。The results show that there is anomalistic crystal whose size reaches nanometer grade in fine pvc ; the crystal structure is damaged by jet - milling, which induces the melting point of nanocrystal pvc decreases from 210 to 128. the nanocrystal pvc induces the decrease of plasicizing time and equilibrium torque and the increase of maximal torque, which show that the nanocrystal pvc have self - plasticization in pvc composites
通過sem 、 tem 、 ftir和dsc測試表明：氣流粉碎制得的pvc微粉中具有不規則納米晶體；氣流粉碎破壞了pvc的晶體結構，使納米晶pvc的熔點從210下降到128 ；納米晶pvc使體系塑化時間、平衡轉距的降低、最大轉距升高，具有自增塑作用。When heating temperature reached 300, crackings appeared on the surface of ceramic tiles but the microstructure of glaze exhibited no apparent change when heating temperature reached 900, the glaze melted, the crystal structure of the tiles broke down, the integrity of ceramic tile was destroyed and the intensity was almost lost
當溫度達到300 ，冷卻試驗時，釉面可產生裂紋，但顯微結構基本無變化；當溫度達到900 ，冷卻試驗時，釉面出現熔化現象，坯體晶體結構酥裂、破碎，完整性遭到破壞，強度基本喪失。The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface
發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。The results showed that there was anomalistic crystal whose size reached nanometer grade in fine pvc ; it ' s about 80nm. the crystal structure was damaged by jet - milling, which induced the melting point of nanocrystal pvc decreased from 210 " c to 128 擄 c. the nanocrystal pvc induced the decrease. of plasicizing time and equilibrium torque and the increase of maximal torque, which showed that the nanocrystal pvc had self - plasticization in pvc composites
通過sem 、 tem 、 ftir和dsc測試表明：氣流粉碎制得的pvc微粉中具有不規則納米晶體，尺寸在80nm左右；氣流粉碎破壞了pvc的晶體結構，使納米晶pvc的熔點從210下降到128 ；納米晶pvc使體系塑化時間、平衡轉距降低、最大轉距升高，具有自增塑作用；納米晶pvc的加入使pvc的沖擊和拉伸強度都有大幅度上升。分享友人