熱擊穿 的英文怎麼說

中文拼音 [rèjīchuān]
熱擊穿 英文
[半] thermal breakdown熱擊穿保護電路 thermal shut down circuit; thermorunaway
  • 穿 : Ⅰ動詞1 （破; 透） pierce through; penetrate 2 （通過孔、隙、空地等） pass through; cross; go thro...
  1. The electron - trapping breakdown is the main reason accelerating the thermal breakdown, and the thermal breakdown is the fundamentality factor of the breakdown of pcss

    電子俘獲擊穿機制是導致熱擊穿的主要原因，而熱擊穿是導致開關徹底失效的根本因素。
  2. This heating helps to break down weak spots in the dielectric that otherwise might pass through the electrode undetected, only to fail during a later spark or hipot test

    這熱量幫助擊穿電線絕緣較薄的地方?否則線材通過電極而沒有被檢測到?結果在以後的火花測試和高壓絕緣試驗將會失效。
  3. Having reacted with copper, paa becomes complex. the complex decomposes after heat treating and cause the increase in dielectric constant and reduction in dielectric breakdown strength. otherwise cu2o and cuo emerge from the complex, too

    N與cu反應后，形成絡合物，熱處理時自身降解，擊穿強度降低，介電常數提高； cz在熱處理后從絡合物離解出來形成cllo和cuzo 。
  4. The wire corresponds to the thermal class " h " ( 180 ? c ). it has an resistance to heat shock. it is widely used for the can be employed in hight - tempera - ture motors and electrical instuments and apparatus

    該產品耐溫等級為h級（ 180 ? c ） ，漆膜具有較好的耐熱沖擊性能和軟化擊穿性能，高溫電機和一般電器、儀表均可適用。
  5. The effects of air ' s absorption of heat, scatter, turbulent and thermal blooming on the laser beam transmitting under the air breakdown threshold value are analysed when laser transmit in the air and the result can be used designing of the laser system

    摘要系統分析了激光在大氣中傳輸時在擊穿閾值以內，由於大氣汽溶膠的吸收、散射、大氣湍流、大氣熱暈等線性非線性問題對光束控制系統的影響，為激光系統提供指導。
  6. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  7. Because of the intrinsic fractional absorption of the laser energy with the conventional solid output windows for high energy lasers ( hel ), the optical quality will be degraded, or the overall hel system cannot run at all when the laser energy are far higher, or the system runs longer time

    然而，由於高能激光器傳統的固體輸出窗口具有不可避免的部分吸收作用，因此，當輸出激光功率很高，或激光器長時間工作時，固體輸出窗口就會產生熱畸變、甚至炸裂或被擊穿，從而影響輸出激光的光束質量或使高能激光器根本無法工作。
  8. The impact broke open a heat panel on the wing, which allowed superheated gases to get inside the structure as columbia soared through the skies for landing 16 days later

    一塊泡沫擊穿了機翼的隔熱板，使得熱氣流進入機體內部，導致哥倫比亞號在發射升空之後不久，在德克薩斯州上空解體。
  9. Test results indicated : with the hoist of altitude, the increase of ice amount and the rise of pollutant, the average flashover voltage reduced. the character exponent generally depends on the insulator profile, ice amount, ice state and pollution severity etc. by means of a high - speed camera, a data acquisition system and high voltage test facilities, a series of the flashover processes on ice surfaces were record. the experimental results form this study and the subsequent theoretical analyses suggested : the thermal ionization of the air in front of an arc root resulted in arc movement ; the electrostatic force had an auxiliary effect of impelling arc propagation ; the electrical

    通過對攝像機、數據採集系統及高壓試驗裝置記錄覆冰絕緣子表面閃絡電弧的發展過程的試驗結果進行理論分析得出：弧根周圍空氣的熱電離導致了電弧的發展，靜電場力對電弧的發展起到了加速作用，電擊穿僅發生在閃絡最終的跳躍階段；通過測量閃絡過程中的放電電壓、泄漏電流、閃絡時間、覆冰水電導率、電弧長度及電弧半徑等參數，得到了不同階段電弧（電弧起弧階段、電弧發展階段及完全閃絡）的發展速度、臨界電弧長度均隨覆冰水電導率的增加而減小。
  10. And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown

    而計算分析和二維數值模擬分析結果表明：梳狀集電結（基區）結構在不增加器件本徵集電結面積的條件下，增大了器件的本徵散熱面積和基區周長，改進了每個子器件單元內的散熱方式，提高了單元內結溫和電流分佈的均勻性，降低了器件的熱阻，增大了器件的耗散功率和輸出功率，較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾，並有利於改善器件抗二次擊穿的性能。
  11. A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation

    本文提出了一個全新的熱載流子增強的超薄柵氧化層經時擊穿模型。
  12. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  13. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  14. Firstly it is shown that the thermal breakdown and electron - trapping breakdown theories are the main reason causing the breakdown of pcss

    指出電子俘獲擊穿機制與熱擊穿是開關擊穿的主要原因。
  15. Theoretical analysis indicates, the two technology helps reduce the concentration of current, lower the peak junction - temperature, and effectively avoid the appearance of devices " breakdown caused by heat and current

    理論分析表明：上述兩種技術，有利於減小電流集中現象，降低器件峰值結溫，避免熱擊穿和二次擊穿的發生。
  16. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  17. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  18. Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress

    與通常的fn應力實驗相比較，熱載流子導致的超薄柵氧化層擊穿顯示了不同的擊穿特性。
  19. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  20. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
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