熱氧化層 的英文怎麼說

中文拼音 [rèyǎnghuàcéng]
熱氧化層 英文
thermal oxide layer
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. Formation mechanism of cracks in surface oxidating layer of mosi2 heating material

    2電熱材料表面氧化層裂紋的形成機制
  2. It is designed according to electrical stove or microwave oven request. heating pipe adopts high temperature resistance mgo powder as the insulation medium and the stainless steel case is passed oxidation deal through the advanced web band protection oven 1050c in order to become the a special oxidation layer and improve the high temperature oxidation and bittern corrosive performance of the heating pipe. the heating tube has high power density and strong heat radion. this product with good safe performance can work normally after 3000hrs life test

    加熱管選用耐高溫氧化鎂作絕緣介質，不銹鋼外殼經過先進的網帶氣體保護爐1050的氧化處理，形成一種特殊的氧化層，提高電熱管的抗高溫氧化及鹽鹵的腐蝕性能。電熱管的功率密度較高，熱輻射能力強。產品經長達3000h的壽命試驗后，仍能正常工作，安全性能好。
  3. P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology

    本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。
  4. A new hot - carrier - induced tddb model of ultra - thin gate oxide is reported in this dissertation

    本文提出了一個全新的熱載流子增強的超薄柵氧化層經時擊穿模型。
  5. Theoretic analysis of self - heating oxidation properties of combustible coal seam

    易燃煤層自熱氧化特性的理論分析
  6. Secondly, the transient characteristics of fn tunneling and hot hole ( hh ) stress induced leakage current ( silc ) in ultra - thin gate oxide are investigated respectively in this dissertation

    其次，本文分別研究了fn隧穿應力和熱空穴（ hh ）應力導致的超薄柵氧化層漏電流瞬態特性。
  7. We can classify thin films into four groups : thermal oxides, dielectric layers, polycrystalline silicon, and metal films

    我們可以把薄膜分成四組：熱氧化物，介電質層，多晶硅，金屬薄膜。
  8. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  9. Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress

    與通常的fn應力實驗相比較，熱載流子導致的超薄柵氧化層擊穿顯示了不同的擊穿特性。
  10. Hot hole injection experiments reveal that the lifetime of ultra - thin gate oxide is not simply determined by the total number of injected hole

    熱空穴注入的實驗結果表明超薄柵氧化層的擊穿不僅由注入的空穴數量決定。
  11. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  12. Therefore, the solution to the hot - carrier degradation of mos circuits is obtained. the other hot - carrier immunity techniques such as

    對抗熱載流子退化的mos器件lddnghtlydopeddrain ）結構及柵氧化層加固技術也作了簡單的介紹。
  13. The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the souce and the drain

    第一個重要的來自熱氧化組薄膜是柵氧化層，在它之下，源和漏之間就能形成導電通道。
  14. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  15. This product is collod feathering achro, aticity and viscosity, wghhich can clear the thick oxideatice horizon hot pressed end plate or rollsteel plank which be processed or welded under hot temperature and hot pressure

    本產品為無色透明的粘稠狀膠體，針對不銹鋼熱壓封頭或用熱軋板製作工件等，經過高溫高壓處理或焊接時所產生紅、黑、黃等各種類型的較厚氧化層，清除迅速，徹底。
  16. The emphasis is about the metal line reliability, contact reliability, gate oxide integrity, and hot carrier injection in test. based on the test datum, the reliability of 1. 0 m process on single failure mechanisms is evaluated, and all the test structures are explained

    測試內容上著重介紹了金屬化完整性測試、氧化層完整性測試、連接完整性測試和熱載流子注入測試，根據測試數據，對1 . 0 m工藝線單一失效機理的可靠性進行了評價，對不同測試結構的作用進行了說明。
  17. Tddb and hce always take place simultaneously under device operation conditions. hot - carrier enhanced tddb effect of ultra - thin gate oxide is investigated by using substrate hot - carrier injection technique

    在通常的工作條件下，氧化層的經時擊穿和熱載流子效應總是同時存在的。
  18. This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s

    本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。
  19. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  20. Our experiments emphasized the correlation between micro structures and some properties of the coatings and tried to obtain the protective coatings with the comprehensively good properties, in which auger electron spectroscopy ( aes ), scanning electron microscope ( sem ), and x - ray diffraction ( xrd ) were employed to investigate the composition, microstructure and crystal phase of the coatings respectively, and the properties test was primarily considered with the wear resistance and corrosion resistance of the coatings

    本論文主要採用pvd技術中的磁控濺射鍍膜（ ms或rms ）及部分用等離子噴塗（ ps ）和熱氧化（ to ）表面處理技術研究了鈾的具有代表性的三種防腐保護鍍層，即單質al 、氧化物al _ 2o _ 3和合金al - zn鍍層。實驗力圖在制備技術、工藝參數及鍍層的微結構和性能之間找到一些內在的聯系，探索綜合性能較好的防腐蝕鍍層。
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