熱電子發射體 的英文怎麼說
中文拼音 [rèdiànzifāshètǐ]
熱電子發射體
英文
cathode emitter-
The electronic temperature, intensities of all lines and continuous spectra gradually increased with the increment of laser energy, and they got to maximum at different laser energy. our results of copper and aluminum show that there are possibly different thresholds of laser energy to electronic temperature and intensities of emission spectra of laser ablated plasma. at the different environmental gas pressure, spatial emission intensity distribution is explained by the competition among " heat reservoir effect ", " confined effect " and " s hadow effect "
認為cu等離子體羽的發光機制是由電子與粒子的碰撞傳能、電子與離子的復合形成的；隨激光能量的增加， cu等離子體特徵輻射（分立譜） 、連續背景輻射（連續譜） 、電子溫度都出現最大值；結合對al的實驗結果說明：激光燒蝕金屬產生的等離子體，其特徵輻射、連續輻射、電子溫度可能都存在一定的能量閾值；背景氣壓對激光燒蝕等離子體譜線的影響，其機理可以認為是「熱庫效應」 、 「約束效應」及「陰影效應」相互競爭的綜合結果。( 2 ) the emission spectra of laser ablation metal copper plasma were measured. the detailed mechanism of plume emission of cu plasma was qualitatively explained using a simple model based on excitation of atom and ion in plume arising from inelastic collision between the elemental species and electron with high kinetic energy. under the local thermal equilibrium model, the electronic temperature of copper plasma was deduced to be in the 104 scale by its emission lines
（ 2 ） cu等離子體光譜：在420 570nm波長范圍內觀測了激光燒蝕cu等離子體的光譜和各發射譜線在等離子體中的空間分佈；比較了激光能量對cu等離子體發射光譜、電子溫度的影響；用局部熱力學平衡（ lte ）近似，測得cu等離子體的電子溫度為104k數量級；在不同背景氣壓下，觀測了激光燒蝕cu等離子體光譜的空間分佈。This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable
本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied
氧化銦錫（ ito ）是一種高簡並的n型半導體，由於具有導電性，可見光高透過率，紅外反射性，穩定的化學性，被廣泛應用於熱反射建築玻璃、抗靜電塗層，太陽能電池，熱發射鏡，平板顯示器和液晶顯示屏，傳感器，有機光致二級管（ oled ）等方面，國內外對高質量的ito薄膜的制備和應用進行了深入的研究，但是很少有ito納米粒子與高分子材料復合的報道。In this paper, such three points are studied as : a ) the angular distributions of the hot electrons emission under laser irradiation at different incidence angles and at different polarization direction, the angular distribution of the hot electrons in the different energy range, and the effects of laser prepulse on the angular distributions of the hot electrons emission ; b ) the energy distribution of the hot electrons at different directions, from the metallic targets and the dielectric targets, in the different energy range of the hot electrons, and the effects of the atomic number z on the energy distribution of hot electron generated by the metallic targets ; and c ) the energetic proton emission resulting from the interaction of the us - ui laser pulse with plasma
本論文進行了三個方面的研究：第一，超熱電子角分佈的研究，包括不同激光入射角下超熱電子的角分佈；激光不同偏振態下超熱電子的角分佈；激光預脈沖對超熱電子角分佈的影響；不同能段的超熱電子的角分佈。第二，超熱電子能量分佈的研究，包括不同方位超熱電子的能量分佈，金屬與非金屬靶材的超熱電子的能量分佈，金屬原子序數z對超熱電子能量分佈的影響以及不同能段超熱電子的能量分佈。第三，研究了超短超強激光與固體靶相互作用所產四川大學博士學位論文生的高能質子發射和能譜。In the investigation of the interaction of the us - ui laser pulse with the plasma, a standard - ray source is firstly used to absolutely calibrate lif mermc - luminescence dosimeters ( tlds ), and the dosimeter are employed as the angular distribution spectrometer and the energy spectrum spectrometer of the hot electrons
在超短超強激光等離子體相互作用的研究中，首次採用137cs鄧標準源對lif熱釋光探測器（ tlds ）進行了絕對標定。並以此作為電子角分佈儀和電子譜儀的探測元件，研究了超短超強激光與等離子體相互作用中超熱電子發射的角分佈和能量分佈。However, the most commonly used x - ray sources didn " t change much no matter in structure or theory, still using thermionic cathodes as electron sources. such conventional x - ray tubes have some defaults, such as big volume, low frequency response, demanding for supply to cathode that was also brittle
目前使用的x光源的基本特點是採用熱電子發射形式即採用熱燈絲作為電子發射源，在高壓加速下轟擊陽極產生x射線，這樣的光源體積較大，需要加熱陰極的電源，且對頻率響應慢。In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films
本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。By using x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), transmission electron microscopy ( tem ), differential scanning calorimeter ( dsc ) and optical microscopy, mechanical activation is investigated. and during the study, two new innovative processes or thoughts, " dual activation reactive milling " and " in situ synthesis in salt bath activated by ma " has been presented for the synthesis of nanometer - sized powder. the phase transformation and oxidation control of cu - cr system during ma is also investigated
在採用x射線衍射分析（ xrd ） 、掃描及透射電子顯微鏡（ sem tem ） 、能譜分析（ eds ） 、熱分析（ dsc ） 、激光粒度測試等試驗手段對ma過程機械激活作用的研究中，發現並提出了「雙重激活反應研磨」和「機械激活鹽浴合成」兩種創新工藝思路；同時，對cu - cr難互溶體系在機械合金化過程中飽和固溶體、氧化物非晶的形成以及氧化現象的控制進行了探討分析。Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices
Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。分享友人