熱電晶體 的英文怎麼說

中文拼音 [rèdiànjīngtǐ]
熱電晶體 英文
pyroelectric crystal
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 電晶體 : bjt
  1. The crystal detector was soon replaced by the thermionic value and had largely become obsolete by 1939.

    晶體檢波器不久即被熱電子管所代替，到1939年已大部分變成了廢物。
  2. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  3. Gaas crystal is a kind of iii - v group compound semiconductor material with good electrical performance. the semiconductor devices and integrated circuit ( ic ) fabricated on gaas substrate have such advantages of hign - speed information processing that they have drawn the researcher ' s attention

    Gaas晶體是一種電學性能優越的-族化合物半導體材料，以其為襯底製作的半導體器件及集成電路，由於具有信息處理速度快等優點而受到青睞，成為近年來研究的熱點。
  4. The effects of the fabrication conditions on the crystal structure, grain size, micromorphology and electrochemical performance of these materials have been studied in depth. the reaction mechanism of the low - heating solid - state reaction method has also been investigated. in addition, a novel electrochemical method ( rpg method ) based on the concept of " ratio of potentio - galvano - charge capacity " has been for the first time developed to determine the diffusion coefficient of lithium - ion within insertion - host materials on the basis of the spherical diffusion model

    本論文較系統地考察了低熱固相反應法合成鋰離子電池正極材料的可行性問題，研究了工藝條件對材料的晶體結構、晶粒尺寸、微觀形貌及電化學性能等的影響，探討了低熱固相反應的機理，並通過引進「恆壓-恆流充電容量比」的概念，給出了一種測定鋰離子嵌入脫出固相擴散系數的新方法。
  5. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  6. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  7. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的，晶元選擇具有低電阻溫度系數的ta2n和具有高熱電系數的半導體單晶si作為熱偶材料。
  8. The fact that tatb crystal in expands along c axle and could not be recovered in a heating circulation were explained from the distance between atoms as well as from miilliken population analysis. we also have explained that p - hmx crystal is easy to initiate decompose and detonate but tatb is very stable through the research of electrostatic potential map of electric charge

    分析原子間距和m lliken集居，解釋了tatb晶體沿c軸膨脹以及受熱循環后長大的各向異性和不可復原性等實驗現象；還通過對點電荷靜電勢的研究，闡明了- hmx晶體易於在分子間相鄰硝基處引發分解和起爆，而tatb則很穩定等實驗事實。
  9. It adopted after years of use proved to be totally reliable, professional design, transistors chassis grounding professional design, large transistors allow direct contact cooling unit and do not have to insert the middle of mica insulation film, thermal capacity increases promoting - - warming is the burning of the power amplifier transistors number one killer. professional design significantly improve the heat dissipation problems so as to enhance the reliability of the power amplifier

    它採用了經過多年使用證實是完全可靠的一種專業設計，電晶體機殼接地的專業設計，讓放大電晶體直接接觸散熱片而中間不用加插絕緣用的雲母片，加促散熱能力? ?升溫是燒毀功放電晶體的頭號殺手，專業設計大大改善了散熱問題從而提高了功放的可靠性。
  10. Thermodynamic entropy, in contrast, depends on the states of all the billions of atoms ( and their roaming electrons ) that make up each transistor

    與此相對照，熱力學熵的大小取決于數十億個構成電晶體的原子（及其漫遊電子）的狀態。
  11. Recent years, the using of piezoelectric sensors becomes a focus in novel biosensors research. the basic principle is that the characters of its oscillation are highly responded with the changes of the surface mass adsorption, or the physic characters in the reaction system including density, viscosity, conductivity and so on. a piezoelectric biosensor with a nanogram sensitivity could be constructed through a reasonable biological processing and structure designing to the piezoelectric quartz crystal

    近年來，壓電傳感器檢測技術逐漸成為生物分析中的研究熱點，其基本原理是利用石英晶體振蕩特性對石英晶體表面質量負載（質量效應）和反應體系物理性狀如密度、粘度、電導率（非質量效應）等的改變具有高度敏感的特性，通過對石英晶體進行適當的生物學處理和結構設計，構建出具有具有ng級檢測能力的生物傳感器。
  12. With a view to providing better service and facilities to the customers, this new mobile post office has adopted a new design and equipped with a tropical roof, a lcd monitor for displaying public notices, an electronic weight as well as a retractable canopy providing protection against sunlight and rain for customers in front of the counters

    新流動郵政局設計新穎，除隔熱車頂、液晶體公告顯示屏、電子磅外，還附設伸縮檐篷，使櫃位前的顧客免受日曬雨淋之苦，務求為市民提供更周全的服務和設施。
  13. General model c38 dc meters are portable taut - band suspended moving coil instruments with light - spot indication. the meters have the feature of extremely high in sensitity and small in consumpition being particularly suitable to be used for measuring weak electric quantity on dc circututs, also for testing the static paramenters of transistors as well for measuring the output of millivolt values of zhermocouple in the vacuun furnaces ( or hydrogen furnaces )

    C38型直流電表是磁電系張絲支承光點指示可攜式電表儀表具有極高的靈敏度，功耗小，特別適合弱電量直流電路測量及晶體管靜態參數測試用以及用做真空爐（或氧氣爐）中測量熱電偶的輸出毫伏值
  14. In fixing stage, the ions in crystals move to form an ionic grating that compensates the electronic grating at elevated temperature. in developing stage after cooling crystals to room temperature, a homogeneous illumination erases the electronic grating and brings out the ionic grating

    定影是通過加熱記錄了體全息光柵的晶體使晶體中的離子運動並去補償記錄信息的電子光柵，形成與電子光柵互補的離子光柵；顯影是在室溫下用均勻光束照射晶體以擦除掉電子光柵，得到離子光柵。
  15. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  16. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  17. The structural characterization of v _ 2o _ 5 compounds were measured bymeans of differential thermoanalysis ( dta ) and thermogravimetry ( tg ), scanning electron microscopy ( sem ), and x - ray diffraction ( xrd ). the testsreveale that materials which were prepared by sol - gel ( inorganic sol gel andmelting - coling ) showed that the amorphous structure, and the interlayer spacingenlarge a lot than that of crystalline v _ 2o _ 5

    採用熱重與差熱（ tg - dta ） ，掃描電子顯微鏡（ sem ） ， x射線衍射（ xrd ）等測試手段對材料的結構性能進行表徵，結果顯示兩種溶膠-凝膠法（無機溶膠凝膠法和熔融淬冷法）制備的v _ 2o _ 5材料均為無定型結構，其層面間距均比晶體v _ 2o _ 5成倍增大。
  18. Cbn120 bright black mono - crystal, regular shape, high toughness and good thermal stability. mainly used for metal, vitrified bond and electroplated tools, wheels. the tools have longer service life

    Cbn120亮黑色立方氮化硼單晶，等積形單晶體，晶體較完整，具有較高韌性和熱穩定性。主要用於電鍍、金屬、陶瓷結合劑磨具、砂輪、工具，使製品具有更長的使用壽命，適合磨削黑色金屬材料及合金。
  19. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  20. Besides, silicon substrate is bent by applying external mechanical stress, the lattice of channel will have strain due to uniaxial tensile stress by nmos and strain due to uniaxial compressive stress by pmos

    但微影技術已經接近瓶頸，所以我們必須另外尋找能夠提升電晶體效能的方法，應變矽就是目前提升電晶體性能最熱門的方法。
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