物料通過額 的英文怎麼說

中文拼音 [wùliàotōngguòé]
物料通過額 英文
through-put capacity
  • 物 : 名詞1 （東西） thing; matter; object 2 （指自己以外的人或與己相對的環境） other people; the outsi...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 通 : 通量詞（用於動作）
  • 過 : 過Ⅰ動詞[口語] （超越） go beyond the limit; undue; excessiveⅡ名詞（姓氏） a surname
  • 額 : 名詞1 （額頭） forehead:寬額 a broad forehead2 （牌匾） a horizontal tablet 3 （規定的數目） a sp...
  • 物料 : item,material,part
  • 通過 : 1 （從一端到另一端） pass through; get past; traverse 2 （同意議案） adopt; pass; carry 3 （以人...
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  2. Material balance and energy balance equations of complex multi - effect evaporation system were expressed in matrix equation, which has the advantages of clear structure and high modularization. by holding or omitting correlation block - matrix in matrix equation, matrix equation could be used to describe the difference of forward - feed, back - feed and cross - reed multi - evaporation system with or without solid separation, extra steam being led off to preheat material liquid, condensation water flash, or solution flash. the models include design and operation

    該模型利用矩陣方程具有結構清晰和高度模塊化的特點，將復雜多效蒸發系統的物料及熱量衡算方程組以矩陣形式表達，通過保留或舍棄矩陣中特定功能模塊，模型就能代表有或無固相析出、有或無引出額外蒸汽預熱原料液、有或無冷凝水閃蒸、有或無溶液閃蒸等不同情況以及各種情況任意組合的併流、逆流、錯流多效蒸發過程，從而實現模型的通用性。
  3. The links below are for additional resources in the fields of neurology, neuropsychology, and neurobiology of aging that range from online references to societies that maintain links to areas that any reader can explore further

    以下是額外補充的資料，為高齡者神經學，神經心理學和神經生物學的相關鏈結，這些鏈結包括了線上參考資料和相關組織，讀者可以通過連結這些組織的網站進一步查看所需資訊。
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