猝滅區 的英文怎麼說
中文拼音 [cùmièqū]
猝滅區
英文
quenched region-
Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2
研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。Important information is that the distance between metal electrode and emitting layer must be suitable. too large, difficult injection ; too small, excitons quenching. within 0 - 70ma / cm2 injection, no effect was observed
實驗給出影響受激發射的重要信息：金屬電極距增益區距離要適當，太大，器件厚，電注入困難；太小發光激子在電極猝滅。
分享友人