界面態 的英文怎麼說

中文拼音 [jièmiàntài]
界面態 英文
interface state
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 界面 : [物理化學] interface; boundary; limiting surface
  1. Abstract : for analyzing the residual stress distributing state within the weld joint, and its effect on the performance of welding structure, when welding the ferrite pearlite steel with the austenite steel, this paper develops a finite element program to compute the interface stress of two or over two material. finally, this program is used to analyze the mechanical behavior of heterogenic joint

    文摘:為了分析鐵素體、珠光體類鋼與奧氏體類鋼焊接時，焊接接頭處焊接殘余應力的分佈狀態及其對焊接構件性能的影響，研製了可計算兩種或兩種以上材料界面應力的有限元程序，並用此程序分析了異質接頭的力學行為。
  2. Summary the front chapter, discuss the exercisable method of urban design, dissertate it from several aspects : space sequence, interface consecution and environment facilities

    通過對以上章節的總結，探討線性休閑空間與動態景觀創造可操作性的城市設計手法。從線性休閑空間整體序列、界面連續、環境設施等幾個方面進行論述。
  3. We hold that the integrate effect consists of two parts : 1 + 1 > 2 and a + b = c, in terms of math : here x1, x2, . . . , xn : integrate units s : functions of new system what features an integrated system are subjective initiative, non - linear function, dynamic connection, sub - system uncertainty, selective competition. the basic factors of integration are integrate context, integrate units, integrate interface and environment, which form the integration condition respectively the basic integrate patterns covers point - to - point, pipeline and hub

    首先，深入探討了集成的內涵，即集成是指為了實現某一目標，在一定的集成環境中，若干集成單元動態地集合成一個泛邊界狀態的有機整體的過程，指出集成效應的數學解釋除了1 + 1 2外，還應該包括： a + b = c ，即若以x _ 1 ， x _ 2 ， … … ， x _ n代表集成單元， s代表集成后新系統的總功能，那麼其特徵有：主體行為性、功能非線性、關系動態性、單元泛化性、選擇競爭性；集成的基本要素包括集成背景、集成單元、集成界面和集成環境等四要素；基本模式有點到點模式、管線型模式和集線器型模式；基本條件有集成背景條件、集成單元條件、集成界面條件和集成環境條件。
  4. Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics

    利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法
  5. In the experiment of photo - excited c - v characteristics of sio2 / n - sic, a ledge that had been appeared in p - type sample was observed because of the deep interface states

    然後使用光照條件討論了p和n型sicmos的界面態的性質，即p型為施主態， n型為受主態。
  6. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  7. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  8. It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate

    模擬結果表明：退火過程所加柵偏壓的大小以及隧道電子效應與建立的界面態所佔比例的不同影響器件的恢復率。
  9. It is thought that the emission process happened with the participation of diamond crystal, graphite, amorphous carbon and intra - face states in the diamond films

    認為非晶碳、石墨、金剛石及相應界面態構成一個完整的體系參與場發射，金剛石薄膜中雜相的存在有利於電子的場發射。
  10. But the quality of its oxide is far from adequate for industrial devices. the devices need high quality of oxide film and sio2 / sic interface structure

    由於其氧化層的的質量還不能達到工業生產的要求，目前關于sic表面的氧化層質量以及界面態特性仍然需要大量研究。
  11. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  12. It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery

    假設隧道電子從硅進入氧化層和界面態的建立是輻射效應的恢復機理。
  13. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  14. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  15. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  16. Fast surface states

    快界面態
  17. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
  18. With taking advantage of the model of two - stage h + process of interface trap formation and the role that f play in radiation hardness in gate - oxide. the above - mentioned result is deeply analyzed

    藉助界面態建立的h ~ +兩步模型和f在柵氧化層中對抗輻照加固所起的作用對上述結果進行了深入的分析。
  19. The study shows that interface state charges not only increase the threshold voltage, but also lower the mosfet transconductance, drain current and field - effect mobility, which can well explain the results of experiment

    分析結果顯示界面態電荷不僅使閾值電壓增大，而且還會導致器件漏電流減小，跨導和場效應遷移率降低，模擬結果能對實驗現象做出很好的解釋。
  20. It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states

    明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
分享友人
分享到 Line

分享到臉書