界面接觸電阻 的英文怎麼說

中文拼音 [jièmiànjiēchùdiànzǔ]
界面接觸電阻 英文
interface contact resistance
  • 界 : 名詞1 （相交的地方; 劃分的界限） boundary 2 （一定的范圍） scope; extent 3 （按職業、工作或性別等...
  • 面 : Ⅰ名詞1 （頭的前部; 臉） face 2 （物體的表面） surface; top 3 （外露的一層或正面） outside; the ri...
  • 接 : Ⅰ動詞1 （靠近;接觸） come into contact with; come close to 2 （連接; 使連接） connect; join; put ...
  • 觸 : Ⅰ動詞1 （接觸） touch; contact 2 （碰; 撞） strike; hit 3 （觸動） touch 4 （感動） move sb ; sti...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 界面 : [物理化學] interface; boundary; limiting surface
  • 接觸 : 1. （交往） come into contact with; get in touch with 2. （沖突） engage 3. （挨上; 碰著） contact; touch
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  2. Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established

    鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。
  3. Especially, in the filed of high tc superconductor, the technology that the cryocooler directly cool the superconducting system has changed the traditional cooling manner, which adopts the method of low tc fluid helium ' s convection and boiling to exchange the heat. it mainly depends on the cooling manner of conducting heat through the interfacial layer between the material of superconductor and non - superconductor ( such as cu, isolator, etc )

    特別是在高溫超導領域中，由於製冷機直接冷卻技術改變了傳統的靠低溫液氦對流、沸騰換熱的冷卻方式，主要依靠超導材料與非超導材料（如銅、電絕緣材料等）固體間的接觸導熱冷卻方式，固體間界面熱阻成為影響導熱性能的關鍵因素之一。
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