疇壁 的英文怎麼說

中文拼音 [chóubì]
疇壁 英文
domain boundary
  • 疇 : 名詞1. [書面語] （田地） farmland 2. [書面語] （種類） kind; division 3. [物理學] （定義范圍; 領域） domain 4. （姓氏） a surname
  • 壁 : 名詞1 （墻） wall （of a house etc ） : 銅墻鐵壁 bastion of iron2 （作用像圍墻的部分） wall of st...
  1. The dissipative attenuation mechanism of the mn - zn ferrite that involved the natural resonance, the piezoelectric resonance and the magnetic hysteresis loss are also studied

    本文還分析了錳鋅鐵氧體自然共振、磁滯損耗和疇壁共振等磁極化機制衰減吸收電磁波的各種機理。
  2. According to the minimum principle in energy, we analyze the microcosmic mechanism of magnetic domain construction and the main factor that affect the shape, size and connecting of the magnetic domain etc. from the microcosmic mechanism of ferromagnet, we analyze how stress influence the magnetic domain and magnetic domain wall, and discover the increase of stress energy and magnetism elasticity energy which destroy the balance of system energy make up the influence of magnetic domain structure, then set up basic disciplinarian between stress and characteristic of magnetism

    同時根據能量最小原理，從理論上分析了磁疇結構存在的微觀機理以及影響磁疇結構運動、變化的主要因素，得出了應力的存在將影響磁疇的形狀、大小和搭配方式等結論。從鐵磁晶體的微觀機理出發，研究了應力對磁疇和磁疇壁的影響，發現應力影響磁疇結構的本質是由於應力的作用使得鐵磁晶體增加了應力能和磁彈性能，體系為了達到新的平衡，導致了磁疇結構變化，並研究了應力與鐵磁晶體磁特性之間的基本規律。
  3. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  4. It indicates that these materials are optimum cadidate for application. the magnetostriction of terfenol - d was calculated based on the model of magnetic domain turning and the model of magnetic domain wall motion respectively. the experiment value is consistent with that of calculation in low magnetic fields

    應用磁疇轉動模型和疇壁位移模型計算了terfenol - d的磁致伸縮，計算結果表明在低磁場下，應用疇壁位移模型得到的計算結果與實驗結果符合較好。
  5. In addition, in the paper we also studied the annihilation of ordinary hard bubbles ( ohb ) by screening in order to measure accurately the critical in - plane field range

    另外，為了更加準確地測定ohb疇壁中的vbl軟化的臨界面內場范圍，本文對經過篩選的ohb在h _ （ ip ）作用下其疇壁中vbl的消失規律給予了研究。
  6. In particular, it is found that static instantons are just domain wall solutions in the magnetic film. stability of the domain walls is also investigated in terms of the instanton theory

    我們發現靜態周期瞬子正是鐵磁膜中的疇壁，用相應的瞬子理論討論了疇壁的穩定性。
  7. Based on the micromagnetic model of the sm ( cocufezr ) z thin films presented in this thesis, the pining field has been computed with different physical parameters of the cell boundary phase

    本文首先建立了sm （ co ， cu ， fe ， zr ） z薄膜疇壁釘扎的二維微磁學模型，研究了胞壁相的厚度和磁晶各向異性常數對疇壁釘扎的影響。
  8. _ incremental form of evolution law of domain switching is developed by taking the volume fraction of domains as key intrinsic factors. the main factors that have great influence on domain switching are material parameters, domain wall motion, domain volume fraction and the interaction energy between inclusion and matrix. inclusion and its neighbors could be addressed in the description as well

    ? ?建立了以電疇翻轉時的體積分數增量為中心的，基於鐵電疇壁運動特性的剩餘應變及電位移的增量形式的演化方程，在其中包含有材料參數、疇壁運動、電疇形式、電疇體積分數及基體與夾雜、夾雜與夾雜等相互間能量作用等影響因素。
  9. Double - wave quantum theory and quantum fluctuation of adomain wall in the ferromageitc system

    鐵磁系統中介觀疇壁的雙波描述及量子漲落
  10. The mbds in the compressed state and the mbds in the uncompressed state was compared in the experiment

    在這個臨界面內場范圍內，疇壁中的vbl是逐漸丟失的。
  11. The mi peak is mainly attributed to the effect of circumferential anisotropy where the dominating magnetization process varies from domain wall movement to the magnetization rotation

    答案:磁場指示器的峰值主要由於，從疇壁位移到磁化旋轉中，不同的主導/顯性磁化過程的圓周各向相異磁場的作用（造成的） 。
  12. It indicated that the threshold temperature 7j, 1 of three kind of domains are identical. that is to say, when temperature reach 7j, 1, vbl in the walls of the three kinds hard domain begin to lose gradually

    此外，硬磁疇疇壁中vbl的分佈問題至今仍然沒有得到很好的解決，也就是說vbl究竟是充滿整個拉長的疇壁還是部分地佔據呢？
  13. The influences of the pre - stress on the working characteristic of the actuator are analyzed by the measurement of displacement. a numerical current source with alternative working mode and current range is manufactured to provide program - set steady current for the drive coil

    單晶材料消除了晶界對疇壁移動的影響，具有很好的低場下的位移輸出能力，這為微位移致動器的研製奠定了很好的基礎。
  14. The results show that the pining field increases with the increasing of the thickness of the cell boundary phase and decrease with the further increasing of the thickness of the cell boundary phase. then high pinning field can be obtained with the appropriate thickness of the cell boundary phase

    計算結果表明，隨著胞壁相厚度的增加，薄膜的釘扎場先增加后降低，這說明胞壁相厚度與疇壁寬度相當時才會獲得較大的釘扎。
  15. X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming

    研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。
  16. In 1992, li zhiqing ' s master degree paper, the temperature stability of vertical bloch line ( vbl ) chains in walls of second hard dumbbell domain ( iid ) in the uncompressed state was investigated experimentally and a threshold temperature ( 7 ) nd at which to breakdown the vbl chains in the walls of iid was found

    由於其轉化過程中vbl沒有丟失，也就是說，其疇壁結構沒有發生變化，所以我們再次證明了三類硬磁疇的疇壁結構是一致的，在直流偏場下之所以會出現不同的縮滅行為，完全是由於vbl的數目引起的。
  17. Recently bulk tb - dy - fe single crystals have been obtained by magnetic levitation cold crucible without contamination in wuhan university of technology. these excellent single crystals, possessing a large displacement output under low magnetic field, build a foundation for the fabrication of the high precision micro - displacement actuators. the purpose of this research is to manufacture an advanced micro - displacement actuator with this high performance single crystal as the driving unit

    常規的磁致伸縮型微位移致動器大多採用多晶或具有孿晶結構的磁致伸縮材料作為驅動單元，由於晶界和孿晶界對疇壁的移動具有阻礙作用，其低場下的位移輸出較小，調控精度受到很大影響。
  18. It was shown that the value of the in - plane was different at r _ ( iid ) = 0 when the mbds in the compressed state was softened. the value of the in - plane was decreasing at r _ ( iid ) = 0 with the increase of the static bias fields, thus it is proved that vbl in the walls of mbd is irregular and there exists a direction along which the vbl in the domain walls annihilate most easily

    隨著產生枝狀疇時的直流偏場的增加，枝狀疇在r _ （ iid ） = 0時所對應的面內場值是逐漸減小的，證明了枝狀疇疇壁中的vbl是隨幾分佈的，也從另外一個角度證明了在面內場作用下vbl的消失存在一個最易方向。
  19. The ultra high density bloch line memory ( blm ) scheme was proposed bykonish in 1983. negative vertical bloch line ( vbl ) pairs in the walls of stripe domains aligned in parallel ( minor loops ) are used as information carries in blm. so, the study of the temperature stability of the vbl in the magnetic domain of garnet bubble is very important to the study of blm and the development of magnetic domain wall physics

    並通過j . c . slonczewski所給出的vbl的平衡間距公式分析得出d疇壁中vbl間的平衡間距（ s _ （ eq ） ）隨溫度的升高而增大，這與以前人們所得到的ohb疇壁中vbl間平衡間距（ s _ （ eq ） ）隨溫度的升高而減小的結論不一致，並對此進行了分析。
  20. In the improved experiment the softening percentage of ohb was large at the critical in - plane field thus the critical in - plane field range related to the parameters of the samples was measured accurately in the paper. meanwhile facts have proved that ohb including less vbl is ohb which will lose vbl at the critical in - plane field

    所以在本文中用比較準確的實驗方法測得了ohb疇壁中的vbl在面內場的作用下，存在一個與材料參量相關的臨界面內范圍h羅， h永] ，並且也證明了在臨界面內場h羅』時丟失vbl的ohb對應的是那些含vbl較少的ohbo
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