直接退火 的英文怎麼說

中文拼音 [zhíjiētuìhuǒ]
直接退火 英文
direct annealing
  • 直 : Ⅰ形容詞1 （成直線的; 硬挺的） straight; stiff 2 （跟地面垂直的; 從上到下的; 從前到后的） erect; v...
  • 接 : Ⅰ動詞1 （靠近;接觸） come into contact with; come close to 2 （連接; 使連接） connect; join; put ...
  • 退 : 動詞1 （向後移動） retreat; draw back; move back 2 （使向後移動） cause to move back; remove; wit...
  • 火 : fire
  • 直接 : direct; immediate
  • 退火 : [冶金學] anneal; annealing; back-out
  1. When the atomic ratio of nb is one, the structure is homogeneous and almost composed of the single sm2fe17 phase. it ' s nearly the same structure as that after annealing. so it can reduce the production cost and increase the stability of magnetic properties

    當nb的原子比為1時的鑄態組織基本為均勻的接近單相的sm _ 2fe _ （ 17 ）組織，已接近於退火后的組織，從而可以避免冗長的均勻化退火化過程而直接用於製造永磁體，極大的降低了生產成本，並能有效的提高磁性能的穩定性。
  2. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加熱反應，得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米，而且中間包裹氯化鈉（ nacl ）顆粒； xrd等結果顯示，高溫退火併徹底清除nacl后形成的中空碳球已經部分石墨化。
  3. The methods were realized directly inversion of the possion ' s ratio from cdp gather and gas - bearing identify. by applied the late theory of avo technology, after inputting the p wave section and s wave section, the p wave and s wave impedance were obtained by applying simulate anneal inversion and used the log as a constrain condition, eventually, obtain the elastic parameter u and x by p and s impedance. then, the gas - bearing will be identified by u and x. by applying this method, the avo combination inversion of prestack and post were realized

    利用上述的反演方法實現了泊松比從道集的直接反演，利用加權疊加技術實現了含油氣的識別，並利用當今avo研究的最新成果，以加權疊加技術分離出的p波和s波剖面作為輸入，在測井的約束下，採用模擬退火方法分別進行p波和s波波阻抗反演，通過p波和s波波阻抗來求取彈性參數和，再通過和的聯合解釋來進行含油氣的判別，實現了avo的疊前疊后的聯合反演。
  4. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
  5. The first one was called one step process or isothermal deposition and annealing process. in this process, the ceo _ 2 layers were formed at high temperature and oxidative atmosphere and then annealed at the same temperature. the relationship between the growth parameters and the textured degree of ceo _ 2 thin film was systematically studied, and the optimal growth parameters were summaried

    採用等溫退火法（或稱「一步法」 ）沉積ceo _ 2 ，即:先在氧化性氣氛下直接反應生長ceo _ 2薄膜，再在與沉積溫度相同的溫度下對薄膜進行退火處理，系統研究了沉積溫度、退火時間、水蒸汽分壓對薄膜c軸織構程度的影響。
  6. Though mcw metrobus in kcrc bus division is not a new thing when they arrived, all of them were playing a significant role in the fleet, no only at early stage but also the day full of air - conditioned buses in the fleet

    九廣鐵路巴士部的都城嘉慕都城型縱然在出現時不算是甚麼新鮮事物，但在車隊中卻起了一個相當重要的角色，即使在車隊中已經充斥各式各樣的空調巴士的年代，都城型依然能夠繼續肩負每天接載乘客的使命，直到退下火線的一刻。
  7. Though mcw metrobus in kcrc bus division is not a new thing when they arrived, all of them were playing a significant role in the fleet, not only at the early stage but also the day full of air - conditioned buses in the fleet

    九廣鐵路巴士部的都城嘉慕都城型縱然在出現時不算是甚麼新鮮事物，但在車隊中卻起了一個相當重要的角色，即使在車隊中已經充斥各式各樣的空調巴士的年代，都城型依然能夠繼續肩負每天接載乘客的使命，直到退下火線的一刻。
  8. First, the current optical system construction ' s optimization algorithms are based on the just optical system ' s preliminary construction which designers have selected. optical system program can not automatically change the optical elements ' nember. so that optical system design ' s intelligentized degree is not high. now this paper applies the genetic algorithms to lens design and shows that the genetic algorithms can effectively work in automatically changing the optical elements ' nember. next, this pape present a new computer design method that applies the genetic - simulated annealing algorithms to directly design the binary optical element

    首先，由於現有的光學系統結構設計的優化演算法都是在選定了初始光學結構的基礎上，只對光學結構參數進行優化選擇，在優化過程中不能夠自動改變光學面數，導致光學系統設計的智能化程度還不是很高，採用遺傳演算法，實現了光學面的自動增減；其次，區別于傳統的二元光學設計方法，為避免其量化臺階數過大導致的成本及加工復雜度的增加，提出了運用混合優化策略遺傳-模擬退火演算法直接設計二元光學元件的新的計算機方法。
  9. The former two parts are the most difficult qaretions a1l along which can be resolved by adopting a anaiytic method named as simulatal annealtw ' s boltzmann. therfore. the pipe - dhaneter sold in the market and the more preferable rebuilding rrgeinen are attained directly the latter two parts can be settled by the adopion of the genendind contractal 8rads method which bo on inferior demand for iintial vaius and obvious effect of optdrihation

    為了克服一直以來的管徑圓整和改造布局優化的兩大難題，採用模擬退火的玻爾茲曼機法對前兩部分進行求解，直接得到了市售管徑和較優的改造布局；后兩部分採用對初值要求不高、優化效果明顯的廣義簡約梯度方法。
  10. Superconducting mgb2 thin films were fabricated on single - crystal sapphire substrate by hfcvd and hpcvd, respectively. the experiments were carried out both in situ and ex situ. in situ method refers to acquiring mgb2 thin films directly during the deposition process. ex situ method is defined as obtaining mgb2 thin films indirectly by post - annealing of precursor b film in high mg vapor pressure at high temperatures

    實驗分原位法和非原位法兩種工藝，原位法是在薄膜沉積過程中直接生成了mgb2超導薄膜；非原位法是先在基片上沉積前驅物b膜，然後將b膜在mg蒸氣中高溫退火得到mgb2超導薄膜。
  11. Annealer is an important part in the process of glass production, stabilization of annealer temperature will directly affect the quality and the finish rate of glass

    退火是玻璃生產過程的一個重要環節，退火溫度的穩定直接影響著玻璃的質量和成品率。
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