直流測量單元 的英文怎麼說

中文拼音 [zhíliúcèliángdānyuán]
直流測量單元 英文
dc measurement
  • 直 : Ⅰ形容詞1 （成直線的; 硬挺的） straight; stiff 2 （跟地面垂直的; 從上到下的; 從前到后的） erect; v...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 直流 : direct current （dc）; constant current; steady current; continuous current; zero frequency curre...
  • 測量 : measure; survey; gauge; meter; measurement; measuring; surveying; mensuration; metering; gauging;...
  1. Find the law of the influence from the injection pressure to the filling time and the cavity pressure and make certain of the best filling time, injection time and injection pressure. though the analysis of the flowing velocity and pressure spread of the key position element in the injection parts in different gate position, we forecast the injection parts quality and the possibility injection flaw and its position, optimize the gate position. in this paper, though the research of analogue of the runner system of metal - powder injection molding and the process of injection molding, we get the law of how the injection parameter influence the injection process

    在相同的注射條件下，通過分析喂料在不同直徑和長度流道中的流動規律，得到了喂料在流道中的速度場、壓力場和溫度場，找到了流道長徑比的合理取值范圍，並得出通過改變流道設計可實現對現有設備資源充分利用的結論；給出了不同注射壓力下，型腔壓力與充模時間關系曲線和喂料熔體平均充填速度與充模時間關系的曲線，得到了注射壓力對充填時間和型腔壓力的影響規律，確定了最佳的充模時間、注射時間和注射壓力；通過分析採用不同位置澆口注射時注射件關鍵位置單元的流動速度和壓力分佈，預測了注射件的成形質量，或可能產生的注射缺陷及位置，優化了澆口設置。
  2. In the paper, based on the existing literature research foundation an analog circuit catastrophic fault location approach by using feedforward networks with back ? propagation learning is realized. by this approach, the simulation require ments before test are reduced because fewer training samples are needed, and the fault location process is fast. this method is very efficient in location of single hard fault wit component tolerances. the measureme nt space feature and the general characterization concept of single and double soft fault in linear circuits are presented. according to this concept, a linear circuits soft fault location approach using subhidden layer bpnn is established with element tolerance, and it is shown that this approach is successful in fault location. a double fault feature extraction.,

    本文在現有文獻理論研究的基礎上實現了採用bp演算法前向多層神經網路對直流測試下模擬電路硬故障的診斷方法。其特點是採用少量典型特徵樣本作為bp網路的訓練樣本，獲得訓練樣本的代價小，減少了測前工作量，同時診斷速度快，在考慮元件容差時仍有好的診斷效果。文中介紹了線性電路單一軟故障和雙軟故障所具有的電壓增量空間特性和統一特徵概念。
  3. On - line monitoring of hvcb is the precondition of predicting maintenance, is the key element of reliable run, and is the important supplement to the traditional off - line preventive maintenance in fact, the faults are made by hvcb, no matter in number or in times, is over 60 % of total faults so it has determinative importance for improving the reliability of power supply and this can greatly decrease the capital waste used by - dating overhaul in this paper, the inspecting way of hvcb mechanism characteristic is discussed the concept of sub - circuit protector is presented, the scheme that we offered has been combined with sub - circuit integrality monitoring theory, to ensure that it has the two functions as a whole according the shut - off times at rated short circuit given by hvcb manufacturer, the electricity longevity loss can be calculated in each operation, and the remained longevity can be forecast too an indirect way for calculating main touch ' s temperature by using breaker shell temperature, air circumference temperature and breaker ' s heat resistance is improved in this paper, and main touch resistance can be calculated if providing the load current msp430, a new single chip microcomputer made by ti company, is engaged to develop the hardware system of the on - line monitoring device, and special problem brought by the lower supply voltage range of this chip is considered fully

    高壓斷路器所造成的事故無論是在次數，還是在事故所造成的停電時間上都占據總量60以上。因此，及時了解斷路器的工作狀態對提高供電可靠性有決定性意義；並可以大大減少盲目定期檢修帶來的資金浪費。本文論述了斷路器機械特性參數監測方法；提出了二次迴路保護器的概念，並將跳、合閘線圈完整性監視和二次迴路保護結合起來，給出具有完整性監視功能的二次迴路保護器實現方案；根據斷路器生產廠家提供的斷路器額定短路電流分斷次數，計算每次分閘對應的觸頭電壽命損耗，預測觸頭電壽命；提出根據斷路器殼體溫度和斷路器周圍空氣溫度結合斷路器熱阻來計算斷路器主觸頭穩態溫升的方法，並根據此時的負荷電流間接計算主觸頭迴路的電阻；在硬體電路設計上，採用美國ti公司最新推出的一種功能強大的單片機msp430 ，並充分考慮該晶元的適用電壓范圍給設計帶來的特殊問題；在通信模塊的設計中，解決了不同工作電壓晶元之間的介面問題，並給出了直接聯接的接線方案。
  4. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
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