相對惰性 的英文怎麼說

中文拼音 [xiāngduìduòxìng]
相對惰性 英文
relative inertness
  • 相 : 相Ⅰ名詞1 （相貌; 外貌） looks; appearance 2 （坐、立等的姿態） bearing; posture 3 [物理學] （相位...
  • 對 : Ⅰ動詞1 （回答） answer; reply 2 （對待; 對付） treat; cope with; counter 3 （朝; 向; 面對） be tr...
  • 惰 : 形容詞（懶） lazy; indolent
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 相對 : 1. （面對面） opposite; face to face 2. （非絕對的） relative 3. （比較的） relatively; comparatively
  • 惰性 : inertia; inertness; sluggishness惰性半徑 radius of gyration; 惰性材料 inert material; 惰性除塵器 ...
  1. By analyzing the differentiae of the total cross sections ( tcs ), the differential cross sections ( dcs ), the partial wave cross sections ( pcs ), the change patterns of the cross sections and the influence on the cross sections because of the var iations in the mass of systems and the relative kinetic energy of incoming atoms for symmetric isotopically substituted systems he, ne, ar, kr, xe - h2, d2, t2 have been obtained. in this paper, we use the tang - toennies potential model for the inertia gas atoms - h2 systems, the murrell - sorbie potential surface with five parameters for the molecules h2, d2, t2. for the inertia gas atoms - d2, t2 systems, we use the same potential surface with the inertia gas atoms - h2 systems

    通過分析he 、 ne 、 ar 、 kr 、 xe ? h _ 2 、 d _ 2 、 t _ 2各碰撞體系在總截面、微分截面和分波截面等方面的差異，總結出在h _ 2分子的對稱同位素替代情形下惰性氣體原子與h _ 2分子體系碰撞截面的變化規律；通過比較he 、 ne 、 ar 、 kr 、 xe ? h _ 2 、 d _ 2 、 t _ 2各體系在碰撞總截面、微分截面、分波截面等方面的不同，詳細討論了同位素替代碰撞體系中體系約化質量及入射原子的相對碰撞能量的變化對碰撞截面的影響，得出了這種影響的規律性。
  2. White or near white, runny powder has hygroscopic quality, no smell or less bad smell, can not dissolve in water, alkali, acid and common organic solvent, has strong expand capability and complexation capability with kinds of substance

    等。具有優良的溶解性生物相溶性生理惰性成膜性膠體保護能力和與多種有機無機化合物復合的能力，對酸鹽及熱較穩定，因此有著廣泛的用途。
  3. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  4. First, it is associated with the prepared conditions of spectral pure graphite electrode ; second, compared with the untreated graphite, the surface functional groups of ? oh and ? cooh on the treated one increased dramatically with hot concentrated h2so4 and the impurities on electrode surface decreased significantly with ultrasonic rinse. a sequence reaction mechanism was proposed for the eis of mn ( ) / mn ( ) on different graphite electrodes. the spectral graphite and the treated one can be suitable for the inert electrode of mn ( ) / mn ( ) cathode

    分析原因認為：一方面與光譜純石墨電極的制備條件有關；另一方面，與未處理石墨電極相比，處理石墨表面含氧官能團? oh 、 ? cooh明顯增多，而且超聲清洗又使其表面雜質含量減少，並提出了一個反應機理解釋mn （ iii ） / mn （ ii ）電對在三種石墨電極上阻抗譜的不同，說明光譜純石墨和處理石墨均可以作為mn （ iii ） / mn （ ii ）正極電對的惰性工作電極。
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